FEATURES
DMOS Transistors (N-Channel)
Dimensions in inches and (millimeters)
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
m a x . .004 (0.1)
.122 (3.1).016 (0.4).016 (0.4)
3
12
T op View
.102 (2.6).007 (0.175).045 (1.15).118 (3.0) .052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
Case: SOT -23 Plastic Package Weight: approx. 0.008 g MECHANICAL DA TA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Pin configuration
1 = Gate,
2 = Source,
3 = Drain
SOT -23
2N7002
Marking S72
Inverse Diode
Symbol
Value Unit Drain-Source Voltage V DSS 60V Drain-Gate V oltage
V DGS 60V Gate-Source-V oltage (pulsed)V GS ±20V Drain Current (continuous)I D 250mA Power Dissipation at T C = 50 °C P tot 0.3101)W Junction T emperature T j 150°C Storage T emperature Range
T S
–55 to +150
°C
1) Ceramic Substrate 0.7mm; 2.5 cm 2 area.
Symbol
Value Unit Max. Forward Current (continuous)at T amb = 25 °C
I F 0.3A ? High input impedance ? High-speed switching
? No minority carrier storage time ? CMOS logic compatible input ? No minority carrier storage time ? CMOS logic compatible input ? No thermal runaway
?
No secondary breakdown
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ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
2N7002
RATINGS AND CHARACTERISTIC CURVES 2N7002
RATINGS AND CHARACTERISTIC CURVES 2N7002
RATINGS AND CHARACTERISTIC CURVES 2N7002