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WF4M32-100G4TI5A中文资料

1White Electronic Designs Corporation ? (602) 437-1520 ? https://www.wendangku.net/doc/345772472.html,

White Electronic Designs

WF4M32-XXX5

August 2002 Rev. 4

4MX32 5V FLASH MODULE, SMD 5962-97612 (pending)

FEATURES

n Access Times of 100, 120, 150ns

Packaging:

? 66 pin, PGA Type, 1.385" square, Hermetic Ceramic HIP (Package 402).? 68 lead, 40mm Low Profile CQFP ( Package 502 ), 3.5mm (0.140") height.?68 lead, Hermetic CQFP (G2T), 22.4mm (0.880") square (Package 509) 4.57mm (0.180") height. Designed to fit JEDEC 68 lead 0.990CQFJ footprint (Fig. 3)n

Sector Architecture

? 32 equal size sectors of 64KBytes per each 2Mx8 chip ?Any combination of sectors can be erased. Also supports full chip erase.n

Minimum 100,000 Write/Erase Cycles Minimum

n Organized as 4Mx32

n User configurable as 8Mx16 or 16Mx8 in HIP and

G4T packages.n Commercial, Industrial, and Military Temperature Ranges n 5 Volt Read and Write. 5V ± 10% Supply.n Low Power CMOS

n Data Polling and Toggle Bit feature for detection of

program or erase cycle completion.n Supports reading or programming data to a sector

not being erased.n RESET pin resets internal state machine to the read

mode.n Built-in Decoupling Caps and Multiple Ground

Pins for Low Noise Operation, Separate Power and Ground Planes to improve noise immunity

PRELIMINARY*

*This data sheet describes a product under development, not fully characterized, and is subject to change without notice.

Note:

For programming information refer to Flash Programming 16M5 Application Note.

White Electronic Designs WF4M32-XXX5

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White Electronic Designs

WF4M32-XXX5

Parameter Symbol Conditions

HIP

G2T G4T Unit Min

Max

Min

Max

Min Max

Input Leakage Current I LI V CC = 5.5, V IN = GND to V CC 101010μA Output L eakage C urrent I LOx32V CC = 5.5, V IN = GND to V CC 101010μA V CC Active Current for Read (1)I CC1CS = V IL , OE = V IH , f = 5MHz 320215345mA V CC Active Current for Program I CC2CS = V IL , OE = V IH

420295445mA or Erase (2)V CC S tandby C urrent I CC3V CC = 5.5, CS = V IH , f = 5MHz, RESET = V IH 20 2.095mA Output Low Voltage V OL I OL = 12.0 mA, V CC = 4.50.45

0.45

V Output High Voltage V OH I OH = -2.5 mA, V CC = 4.5

0.85 x 0.85 x 0.85 x V Vcc Vcc Vcc Low V CC Lock-Out Voltage

V LKO

3.2

4.2

3.2

4.2

3.2

4.2

Parameter Symbol HIP (H2) CQFP (G2T)CQFP( G4T)OE capacitance C OE 757520WE capacitance C WE 7575 20CS capacitance C CS 205020Data I/O capacitance C I/O 303030Address input capacitance

C AD

This parameter is guaranteed by design but not tested.

A BSOLUTE M AXIMUM R ATINGS

Parameter

Symbol Ratings Unit Voltage on Any Pin Relative to V SS V T -2.0 to +7.0

V Power Dissipation P T 8W Storage Temperature Tstg -65 to +125

°C Short Circuit Output Current I OS

100mA Endurance - Write/Erase Cycles 100,000 min

cycles (Mil Temp)

Data Retention (Mil Temp)

years

R ECOMMENDED DC O PERATING C ONDITIONS

Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5V Ground

V SS 000V Input High Voltage V IH 2.0-V CC + 0.5V Input Low Voltage

V IL -0.5-+0.8V Operating Temperature (Mil.)T A -55-+125°C Operating Temperature (Ind.)

T A

-40

-+85

°C

DC C HARACTERISTICS - CMOS C OMPATIBLE

(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)

NOTES:

1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz). The IH .

2. Icc active while Embedded Algorithm (program or erase) is in progress.

3. DC test conditions V IL = 0.3V, V IH = V CC - 0.3V

C APACITANCE (P F)

(TA = +25°C, V IN = OV, F = 1.0MH Z )

1. Guaranteed by design, not tested.

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White Electronic Designs WF4M32-XXX5

AC C HARACTERISTICS F OR G2T P ACKAGE W RITE/E RASE/P ROGRAM O PERATIONS,CS C ONTROLLED

(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)

Parameter Symbol-100-120-150Unit

Min Max Min Max Min Max

Write Cycle Time t AVAV t WC100120150ns Write Enable Setup Time t WLEL t WS000ns Chip Select Pulse Width t ELEH t CP455050ns Address Setup Time t AVEL t AS000ns Data Setup Time t DVEH t DS455050ns Data Hold Time t EHDX t DH000ns Address Hold Time t ELAX t AH455050ns Chip Select Pulse Width High t EHEL t CPH202020ns Duration of Byte Programming Operation (1)t WHWH1300300300μs Sector Erase Time (2)t WHWH2151515sec Read Recovery Time t GHEL000μs Chip Programming Time444444sec Chip Erase Time (3)256256256sec Output Enable Hold Time (4)t OEH101010ns NOTES:

1. Typical value for tWHWH1 is 7μs.

2. Typical value for tWHWH2 is 1sec.

3. Typical value for Chip Erase Time is 32sec.

4. For Toggle and Data Polling.

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WF4M32-XXX5

AC C HARACTERISTICS F OR G4T A ND H2 P ACKAGES W RITE /E RASE /P ROGRAM O PERATIONS ,CS C ONTROLLED

(VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C)

Parameter Symbol

-100

-120

-150

Unit

Min

Max

Min Max

t EHEL t CPH

ns Duration of Byte Programming Operation (2)t WHWH1300300300μs Sector Erase Time (3)t WHWH215

sec Read Recovery Time t GHEL

μs Chip Programming Time 444444sec Chip Erase Time (4)256

256

sec Output Enable Hold Time (5)

t OEH

ns NOTES:

1. A21 must be held constant until WE or CS go high, whichever occurs first.

2. Typical value for tWHWH1 is 7μs.

3. Typical value for tWHWH2 is 1sec.

4. Typical value for Chip Erase Time is 32sec.

5. For Toggle and Data Polling.

White Electronic Designs WF4M32-XXX5

White Electronic Designs Corporation ? Phoenix AZ ? (602) 437-1520

White Electronic Designs WF4M32-XXX5

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White Electronic Designs WF4M32-XXX5

White Electronic Designs Corporation ? Phoenix AZ ? (602) 437-1520

White Electronic Designs WF4M32-XXX5

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White Electronic Designs Corporation ? Phoenix AZ ? (602) 437-1520

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White Electronic Designs WF4M32-XXX5

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O RDERING I NFORMATION

W F 4M32 - XXX X X 5 X

LEAD FINISH:

Blank = Gold plated leads

A=Solder dip leads

V PP PROGRAMMING VOLTAGE

5 = 5 V

DEVICE GRADE:

M=Military Screened-55°C to +125°C

I=Industrial-40°C to +85°C

C=Commercial0°C to +70°C

PACKAGE TYPE:

H2=Ceramic Hex In line Package, HIP (Package 402)

G4T = 40mm Low Profile CQFP (Package 502)

G2T = 22.4mm Ceramic Quad Flat Pack, CQFP (Package 509)

ACCESS TIME (ns)

ORGANIZATION, 4M x 32

User configurable as 8M x 16 or 16M x 8 in HIP and G4T packages

F L A S H

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