NTS2101P中文资料

NTS2101P

Power MOSFET

?8.0 V, ?1.4 A, Single P?Channel, SC?70 Features

?Leading Trench Technology for Low R DS(on) Extending Battery Life ??1.8 V Rated for Low V oltage Gate Drive

?SC?70 Surface Mount for Small Footprint (2 x 2 mm)

?Pb?Free Package is Available

Applications

?High Side Load Switch

?Charging Circuit

?Single Cell Battery Applications such as Cell Phones,

Digital Cameras, PDAs, etc.

MAXIMUM RATINGS (T J= 25°C unless otherwise stated)

Parameter Symbol Value Units Drain?to?Source Voltage V DSS?8.0V Gate?to?Source Voltage V GS±8.0V

Continuous Drain

Current (Note 1)Steady

State

T A = 25°C I D?1.4A

T A = 70°C?1.1

t ≤5 s T A = 25°C?1.5A

Power Dissipation (Note 1)Steady

State

T A = 25°C P D0.29W t ≤5 s0.33W

Pulsed Drain Current tp = 10 m s I DM?3.0A Operating Junction and Storage Temperature T J

, T STG ?55 to

150

°C

Source Current (Body Diode), Continuous I S?0.46A Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T L260°C THERMAL RESISTANCE RATINGS

Parameter Symbol Max Units Junction?to?Ambient – Steady State (Note 1)R q JA430°C/W Junction?to?Ambient ? t ≤ 5 s (Note 1)R q JA375 Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1.Surface?mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

Device Package Shipping?

ORDERING INFORMATION

NTS2101PT1SOT?3233000/T ape & Reel

https://www.wendangku.net/doc/3e6126770.html,

V(BR)DSS R DS(on) Typ I D Max

?8.0 V

65 m W @ ?4.5 V

78 m W @ ?2.5 V

117 m W @ ?1.8 V

?1.4 A

?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

NTS2101PT1G SOT?323

(Pb?Free)

3000/T ape & Reel

ELECTRICAL CHARACTERISTICS (T J= 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS

Drain?to?Source Breakdown Voltage V(BR)DSS V GS= 0 V, I D= ?250 m A?8.0?20V Drain?to?Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/T J?10mV/°C

Zero Gate Voltage Drain Current I DSS V GS= 0 V,

V DS= ?6.4V T J= 25°C?1.0m A T J= 70°C?5.0

Gate?to?Source Leakage Current I GSS V DS= 0 V, V GS= ±8.0V±100nA ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V GS(TH)V GS= V DS, I D = ?250 m A?0.45?0.7V Negative Threshold

Temperature Coefficient

V GS(TH)/T J 2.6mV/°C Drain?to?Source On Resistance R DS(on)V GS= ?4.5V, I D= ?1.0A65100m W

V GS= ?2.5V, I D= ?0.5A78140

V GS = ?1.8V, I D= ?0.3A117210 CHARGES AND CAPACITANCES

Input Capacitance C ISS V GS= 0 V, f = 1.0 MHz,

V DS= ?8.0V 640pF

Output Capacitance C OSS120 Reverse Transfer Capacitance C RSS82

Total Gate Charge Q G(TOT)V GS= ?5.0 V, V DD= ?5.0V,

I D= ?1.0A 6.4nC

Threshold Gate Charge Q G(TH)0.7 Gate?to?Source Charge Q GS 1.0 Gate?to?Drain Charge Q GD 1.5 SWITCHING CHARACTERISTICS (Note 3)

Turn?On Delay Time t d(ON)V GS= ?4.5V, V DD= ?4.0V,

I D= ?1.0A, R G= 6.2 W 6.2ns

Rise Time t r15 Turn?Off Delay Time t d(OFF)26 Fall Time t f18 DRAIN?SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V SD V GS= 0 V,

I S= ?0.3A T J= 25°C?0.62?1.2V T J= 125°C?0.51

Reverse Recovery Time t RR V GS= 0 V, dI SD/dt = 100 A/m s,

I S= ?1.0A 23.4ns

Charge Time T a7.7

Discharge Time T b15.7

Reverse Recovery Charge Q RR9.5nC

2.Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.

3.Switching characteristics are independent of operating junction temperatures.

?I D , D R A I N C U R R E N T (A M P S )

R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (W )

Figure 5. On ?Resistance Variation with

Temperature

T J , JUNCTION TEMPERATURE (°C)R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (N O R M A L I Z E D )

Figure 6. Capacitance Variation

DRAIN ?TO ?SOURCE VOLTAGE (VOLTS)

?V SD , SOURCE ?TO ?DRAIN VOLTAGE (VOLTS)

?I S , S O U R C E C U R R E N T (A M P S )

8.0

Q G , TOTAL GATE CHARGE (nC)

?V G S , G A T E ?T O ?S O U R C E V O L T A G E (V O L T S )

6.02.0Figure

7. Gate ?to ?Source and Drain ?to ?Source

Voltage vs. Total Gate Charge

4.0Figure 8. Diode Forward Voltage vs. Current

PACKAGE DIMENSIONS

SC ?70 (SOT ?323)CASE 419?04ISSUE M

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198

2.

2.CONTROLLING DIMENSION: INCH.

DIM A MIN NOM MAX MIN

MILLIMETERS

0.800.90 1.000.032INCHES A10.000.050.100.000A20.7 REF b 0.300.350.400.012c 0.100.180.250.004D 1.80 2.10 2.200.071E 1.15 1.24 1.350.045e 1.20 1.30 1.400.0470.0350.0400.0020.0040.0140.0160.0070.0100.0830.0870.0490.0530.0510.055NOM MAX L 2.00

2.10 2.40

0.079

0.083

0.095

H E

e10.65 BSC 0.425 REF 0.028 REF 0.026 BSC 0.017 REF STYLE 8:

PIN 1.GATE 2.SOURCE 3.DRAIN

ǒmm inches

ǔSCALE 10:1

*For additional information on our Pb ?Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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