2N2222ACSM中文资料

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALL Y SEALED

CERAMIC SURFACE MOUNT P ACKAGE FOR HIGH RELIABILITY APPLICA TIONS

FEATURES

? SILICON PLANAR EPITAXIAL NPN TRANSISTOR

? HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)? CECC SCREENING OPTIONS

? SPACE QUALITY LEVELS OPTIONS ? HIGH SPEED SATURATED SWITCHING

APPLICATIONS:

Hermetically sealed surface mount version of the popular 2N2222A for high reliability /space applications requiring small size and low weight devices.

V CBO Collector – Base Voltage

V CEO Collector – Emitter Voltage (I B = 0)V EBO Emitter – Base Voltage (I B = 0)I C Collector Current

P D Total Device Dissipation P D Derate above 50°C

R ja Thermal Resistance Junction to Ambient T stg,Tj

Storage Temperature,Operating Temp Range

75V

40V 6V 600mA 350mW 2.0mW / °C 350°C/W –55 to 200°C

MECHANICAL DATA

Dimensions in mm (inches)

ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated)

PAD 1 – Base

Underside View

PAD 2 – Emitter

PAD 3 – Collector

2.54 ± 0.13 1.02 ± 0.10(0.04 ± 0.004)

(0.055)max.

A =

SOT23 CERAMIC (LCC1 PACKAGE)

Parameter

Test Conditions

Min.Typ.Max.Unit

t d Delay Time t r Rise Time t s Storage Time t f

Fall Time

Parameter

Test Conditions

Min.

Typ.Max.Unit

Parameter

Test Conditions

Min.

Typ.Max.Unit

I C = 10mA I C = 10m A I E = 10m A I C = 0I B = 0V CE = 60V I E = 0V CB = 60V

T C = 125°C I C = 0V EB = 3V (off)V CE = 60V V EB = 3V (off)I C = 150mA I B = 15mA I C = 500mA I B = 50mA I C = 150mA I B = 15mA I C = 500mA I C = 50mA I C = 0.1mA V CE = 10V I C = 1mA

V CE = 10V I C = 10mA

V CE = 10V I C = 10mA

V CE = 10V I C = 150mA V CE = 10V I C = 150mA V CE = 1V I C = 500mA

V CE = 10V ELECTRICAL CHARACTERISTICS (T case = 25°C unless otherwise stated)

V CEO(sus)*Collector – Emitter Sustaining Voltage V (BR)CBO*Collector – Base Breakdown Voltage V (BR)EBO*Emitter – Base Breakdown Voltage I CEX*Collector Cut-off Current (I C = 0)I CBO*Collector – Base Cut-off Current I EBO*Emitter Cut-off Current (I C = 0)I BL*Base Current

V CE(sat)*Collector – Emitter Saturation Voltage V BE(sat)*

Base – Emitter Saturation Voltage

h FE*

DC Current Gain

T A = –55°C 40756

10101010200.31

0.6 1.22

35507535100300

5040

V

V V

nA nA m A nA nA V V

—

f T Transition Frequency C ob Output Capacitance C ib Input Capacitance h fe

Small Signal Current Gain

I C = 20mA V CE = 20V f = 100MHz V CB = 10V I E = 0 f = 1.0MHz V BE = 0.5V I C = 0 f = 1.0MHz I C = 1mA V CE = 10V f = 1kHz I C = 10mA

V CE = 10V

f = 1kHz

300

830

5030075

375

MHz

pF pF

102522560

ns ns ns ns

V CC = 30V V BE = 0.5V (off)I C1= 150mA I B1= 15mA V CC = 30V

I C = 150mA I B1= I B2= 15mA

f T is defined as the frequency at which h FE extrapolates to unity.

* Pulse test t p = 300m s , d ￡ 2%

DYNAMIC CHARACTERISTICS (T case = 25°C unless otherwise stated)

SWITCHING CHARACTERISTICS (RESISTIVE LOAD) (T case = 25°C unless otherwise stated)