Silicon PIN Photodiode, RoHS Compliant
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Document Number: 81510
BPV23F, BPV23FL
Vishay Semiconductors
DESCRIPTION
BPV23F is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 %of sensitivity improvement in comparison with flat package.BPV23FL has long leads, other specifications like BPV23F.
FEATURES
?Package type: leaded ?Package form: side view ?Dimensions (in mm): 4.5 x 5 x 6?Radiant sensitive area (in mm 2): 4.4 ?High radiant sensitivity
?Daylight blocking filter matched with 940 nm emitters
?Fast response times
?Angle of half sensitivity: ? = ± 60°
?Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
?High speed detector for infrared radiation
?Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T amb = 25 °C, unless otherwise specified
94 8
633
PRODUCT SUMMARY
COMPONENT I ra (μA)? (deg)λ0.5 (nm)BPV23F 63± 60870 to 1050BPV23FL
63
± 60
870 to 1050
ORDERING INFORMATION
ORDERING CODE PACKAGING
REMARKS
PACKAGE FORM
BPV23F Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV23FL
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
Side view, long leads
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION
SYMBOL
VALUE UNIT Reverse voltage V R 60V Power dissipation T amb ≤ 25 °C P V 215mW Junction temperature T j 100°C Operating temperature range T amb - 40 to + 100°C Storage temperature range T stg - 40 to + 100
°C Soldering temperature
t ≤ 5 s
T sd 260°C Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm 2
R thJA
350
K/W
Document Number: 81510
For technical questions, contact: detectortechsupport@https://www.wendangku.net/doc/3e8989922.html,
https://www.wendangku.net/doc/3e8989922.html,
BPV23F, BPV23FL
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
Note
T amb = 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
T amb = 25°C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.MAX.UNIT Forward voltage I F = 50 mA V F 1
1.3
V Breakdown voltage I R = 100 μA, E = 0V (BR)60
V Reverse dark current V R = 10 V, E = 0I ro 230
nA Diode capacitance V R = 0 V, f = 1 MHz, E = 0C D 48pF Serial resistance V R = 12 V, f = 1 MHz R S 900ΩOpen circuit voltage
E e = 1 mW/cm 2
, λ = 950 nm V o 390mV Temperature coefficient of V o E e = 1 mW/cm 2, λ = 950 nm TK Vo - 2.6mV/K Short circuit current E e = 1 mW/cm 2, λ = 950 nm I k 60μA Reverse light current E e = 1 mW/cm 2, λ = 950 nm,
V R = 5 V I ra 4563μA Temperature coefficient of I ra E e = 1 mW/cm 2, λ = 950 nm,
V R = 10 V
TK Ira 0.2%/K Absolute spectral sensitivity V R = 5 V, λ = 870 nm s(λ)0.35A/W V R = 5 V, λ = 950 nm
s(λ)
0.6A/W Angle of half sensitivity ?
± 60deg Wavelength of peak sensitivity λp 950nm Range of spectral bandwidth λ0.5870 to 1050
nm Quantum efficiency λ = 950 nm η90%Noise equivalent power V R = 10 V, λ = 950 nm NEP 4 x 10-14W/√ Hz Detectivity V R = 10 V, λ = 950 nm D* 5 x 1012
cm √Hz/W
Rise time V R = 10 V, R L = 1 k Ω, λ = 820 nm t r 70ns Fall time V R = 10 V, R L = 1 k Ω, λ = 820 nm t f 70ns Cut-off frequency
V R = 12 V, R L = 1 k Ω, λ = 870 nm f c 4MHz V R = 12 V, R L = 1 k Ω, λ = 950 nm
f c
1
MHz
BPV23F, BPV23FL
Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant
Fig. 3 - Reverse Light Current vs. Irradiance Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
https://www.wendangku.net/doc/3e8989922.html, For technical questions, contact: detectortechsupport@https://www.wendangku.net/doc/3e8989922.html, Document Number: 81510
BPV23F, BPV23FL Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: BPV23F
PACKAGE DIMENSIONS in millimeters: BPV23FL
Document Number: 81510For technical questions, contact: detectortechsupport@https://www.wendangku.net/doc/3e8989922.html, https://www.wendangku.net/doc/3e8989922.html,
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All product specifications and data are subject to change without notice.
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