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BPV23F_08中文资料

BPV23F_08中文资料
BPV23F_08中文资料

Silicon PIN Photodiode, RoHS Compliant

https://www.wendangku.net/doc/3e8989922.html, For technical questions, contact: detectortechsupport@https://www.wendangku.net/doc/3e8989922.html,

Document Number: 81510

BPV23F, BPV23FL

Vishay Semiconductors

DESCRIPTION

BPV23F is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 %of sensitivity improvement in comparison with flat package.BPV23FL has long leads, other specifications like BPV23F.

FEATURES

?Package type: leaded ?Package form: side view ?Dimensions (in mm): 4.5 x 5 x 6?Radiant sensitive area (in mm 2): 4.4 ?High radiant sensitivity

?Daylight blocking filter matched with 940 nm emitters

?Fast response times

?Angle of half sensitivity: ? = ± 60°

?Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

?High speed detector for infrared radiation

?Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters

Note

Test condition see table “Basic Characteristics”

Note

MOQ: minimum order quantity

Note

T amb = 25 °C, unless otherwise specified

94 8

633

PRODUCT SUMMARY

COMPONENT I ra (μA)? (deg)λ0.5 (nm)BPV23F 63± 60870 to 1050BPV23FL

63

± 60

870 to 1050

ORDERING INFORMATION

ORDERING CODE PACKAGING

REMARKS

PACKAGE FORM

BPV23F Bulk MOQ: 4000 pcs, 4000 pcs/bulk Side view BPV23FL

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

Side view, long leads

ABSOLUTE MAXIMUM RATINGS

PARAMETER TEST CONDITION

SYMBOL

VALUE UNIT Reverse voltage V R 60V Power dissipation T amb ≤ 25 °C P V 215mW Junction temperature T j 100°C Operating temperature range T amb - 40 to + 100°C Storage temperature range T stg - 40 to + 100

°C Soldering temperature

t ≤ 5 s

T sd 260°C Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm 2

R thJA

350

K/W

Document Number: 81510

For technical questions, contact: detectortechsupport@https://www.wendangku.net/doc/3e8989922.html,

https://www.wendangku.net/doc/3e8989922.html,

BPV23F, BPV23FL

Silicon PIN Photodiode, RoHS Compliant

Vishay Semiconductors

Note

T amb = 25 °C, unless otherwise specified

BASIC CHARACTERISTICS

T amb = 25°C, unless otherwise specified

Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.MAX.UNIT Forward voltage I F = 50 mA V F 1

1.3

V Breakdown voltage I R = 100 μA, E = 0V (BR)60

V Reverse dark current V R = 10 V, E = 0I ro 230

nA Diode capacitance V R = 0 V, f = 1 MHz, E = 0C D 48pF Serial resistance V R = 12 V, f = 1 MHz R S 900ΩOpen circuit voltage

E e = 1 mW/cm 2

, λ = 950 nm V o 390mV Temperature coefficient of V o E e = 1 mW/cm 2, λ = 950 nm TK Vo - 2.6mV/K Short circuit current E e = 1 mW/cm 2, λ = 950 nm I k 60μA Reverse light current E e = 1 mW/cm 2, λ = 950 nm,

V R = 5 V I ra 4563μA Temperature coefficient of I ra E e = 1 mW/cm 2, λ = 950 nm,

V R = 10 V

TK Ira 0.2%/K Absolute spectral sensitivity V R = 5 V, λ = 870 nm s(λ)0.35A/W V R = 5 V, λ = 950 nm

s(λ)

0.6A/W Angle of half sensitivity ?

± 60deg Wavelength of peak sensitivity λp 950nm Range of spectral bandwidth λ0.5870 to 1050

nm Quantum efficiency λ = 950 nm η90%Noise equivalent power V R = 10 V, λ = 950 nm NEP 4 x 10-14W/√ Hz Detectivity V R = 10 V, λ = 950 nm D* 5 x 1012

cm √Hz/W

Rise time V R = 10 V, R L = 1 k Ω, λ = 820 nm t r 70ns Fall time V R = 10 V, R L = 1 k Ω, λ = 820 nm t f 70ns Cut-off frequency

V R = 12 V, R L = 1 k Ω, λ = 870 nm f c 4MHz V R = 12 V, R L = 1 k Ω, λ = 950 nm

f c

1

MHz

BPV23F, BPV23FL

Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant

Fig. 3 - Reverse Light Current vs. Irradiance Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 5 - Diode Capacitance vs. Reverse Voltage

Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement

https://www.wendangku.net/doc/3e8989922.html, For technical questions, contact: detectortechsupport@https://www.wendangku.net/doc/3e8989922.html, Document Number: 81510

BPV23F, BPV23FL Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors

PACKAGE DIMENSIONS in millimeters: BPV23F

PACKAGE DIMENSIONS in millimeters: BPV23FL

Document Number: 81510For technical questions, contact: detectortechsupport@https://www.wendangku.net/doc/3e8989922.html, https://www.wendangku.net/doc/3e8989922.html,

Disclaimer Legal Disclaimer Notice

Vishay

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

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