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NP0640SAT3G中文资料

NP0640SAT3G中文资料
NP0640SAT3G中文资料

NP Series

Preferred Devices

Thyristor Surge Protectors High Voltage Bidirectional

NP Series Thyristor Surge Protector Devices (TSPD) protect telecommunication circuits such as central office, access, and customer premises equipment from overvoltage conditions. These are bidirectional devices so they are able to have functionality of 2 devices in one package, saving valuable space on board layout.

These devices will act as a crowbar when overvoltage occurs and will divert the energy away from circuit or device that is being protected. Use of the NP Series in equipment will help meet various regulatory requirements including: GR?1089?CORE, IEC 61000?4?5, ITU K.20/21/45, IEC 60950, TIA?968?A, FCC Part 68, EN 60950, UL 1950.

ELECTRICAL PARAMETERS

Device V DRM V(BO)V T I DRM I(BO)I T I H V V V m A mA A mA

NP0640SxT3G587745800 2.2150 NP0720SxT3G658845800 2.2150 NP0900SxT3G759845800 2.2150 NP1100SxT3G9013045800 2.2150 NP1300SxT3G12016045800 2.2150 NP1500SxT3G14018045800 2.2150 NP1800SxT3G170220

45800 2.2150

NP2100SxT3G180******** 2.2150 NP2300SxT3G19026045800 2.2150 NP2600SxT3G22030045800 2.2150 NP3100SxT3G27535045800 2.2150 NP3500SxT3G32040045800 2.2150 G = indicates leadfree, RoHS compliant

SURGE DATA RATINGS

Specification

Waveform x = series ratings

Unit Voltage

m s

Current

m s A B C

GR?1089?CORE2x102x10150250500A(pk) IEC 61000?4?5 1.2x508x20150250400

TIA?968?A10x16010x16090150200

GR?1089?CORE10x36010x36075125175

TIA?968?A10x56010x56050100150

ITU?T K.20/2110x7005x31075100200

GR?1089?CORE10x100010x10005080100

*Preferred devices are recommended choices for future use and best overall value.

https://www.wendangku.net/doc/3811037211.html,

See detailed ordering and shipping information on page 4 of this data sheet.

ORDERING INFORMATION

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)

Characteristics (Note 1)Symbol Min Typ Max Unit

Breakover Voltage (Both Polarities)

NP0640SxT3G

NP0720SxT3G

NP0900SxT3G

NP1100SxT3G

NP1300SxT3G

NP1500SxT3G

NP1800SxT3G

NP2100SxT3G

NP2300SxT3G

NP2600SxT3G

NP3100SxT3G

NP3500SxT3G V(BO)

77

88

98

130

160

180

220

240

260

300

350

400

V

Off?State Voltage (Both Polarities)

NP0640SxT3G

NP0720SxT3G

NP0900SxT3G

NP1100SxT3G

NP1300SxT3G

NP1500SxT3G

NP1800SxT3G

NP2100SxT3G

NP2300SxT3G

NP2600SxT3G

NP3100SxT3G

NP3500SxT3G V DRM

58

65

75

90

120

140

170

180

190

220

275

320

V

Off State Current ( V D1 = 50 V ) Both Polarities

( V D2 = V DRM ) Both Polarities I DRM1

I DRM2

2.0

5.0

m A

m A

Holding Current (Both Polarities) (Note 4) V S = 500 V; I T = 2.2 A I H150250?mA On?State Voltage I T = 1.0 A(pk) (PW = 300 m Sec, DC = 2%)V T?? 4.0V Maximum Non?Repetitive Rate of Change of On?State Current (Note 1)

(Haefely test method, 1.0 pk < 100 A)

di/dt??500A/m Sec

Critical Rate of Rise of Off?State Voltage

(Linear Waveform, V D = 0.8 V DRM, T J = 25°C)

dv/dt 5.0??kV/m Sec CAPACITANCE

Characteristics Symbol

Typ

Unit A B C

(f=1.0 MHz, 1.0 V rms, 2 Vdc bias)

NP0640SxT3G

NP0720SxT3G

NP0900SxT3G

NP1100SxT3G

NP1300SxT3G

NP1500SxT3G

NP1800SxT3G

NP2100SxT3G

NP2300SxT3G

NP2600SxT3G

NP3100SxT3G

NP3500SxT3G C o

70

70

70

70

60

60

60

60

40

40

40

40

125

125

125

125

100

100

100

100

60

60

60

60

210

210

210

210

180

180

180

180

100

100

100

100

pF

1.Electrical parameters are based on pulsed test methods.

2.di/dt must not be exceeded of a maximum of 100 A/m Sec in this application.

3.Measured under pulsed conditions to reduce heating

4.Allow cooling before testing second polarity.

SURGE RATINGS

Characteristics Symbol A B C Unit Nominal Pulse

Surge Short Circuit Current Non – Repetitive

Double Exponential Decay Waveform (Notes 5, 6 and 7)

2 x 10 m Sec

8 x 20 m Sec 10 x 160 m Sec 10 x 360 m Sec 10 x 560 m Sec 10 x 700 m Sec 10 x 1000 m Sec I PPS1

I PPS2

I PPS3

I PPS4

I PPS5

I PPS6

I PPS7

150

150

90

75

50

75

50

250

250

150

125

100

100

80

500

400

200

150

150

200

100

A(pk)

5.Allow cooling before testing second polarity.

6.Measured under pulse conditions to reduce heating.

7.Nominal values may not represent the maximum capability of a device.

Figure 1. Exponential Decay Pulse Waveform

TIME (m s)

50

I

p

p

?

P

E

A

K

P

U

L

S

E

C

U

R

R

E

N

T

?

%

I

p

p

100

t r t f

?I

Figure 2. Voltage Current Characteristics of TSPD Symbol Parameter

V DRM Peak Off State Voltage

V(BO)Breakover Voltage

I(BO)Breakover Current

I H Holding Current

V T On State Voltage

I T On State Current

ORDERING INFORMATION

Part Number

Marking Case

Shipping ?

NP0640SAT3G 064A SMB (Pb?Free)

2500 / Tape and Reel

NP0640SBT3G 064B NP0640SCT3G 064C NP0720SAT3G 072A NP0720SBT3G 072B NP0720SCT3G 072C NP0900SAT3G 090A NP0900SBT3G 090B NP0900SCT3G 090C NP1100SAT3G 110A NP1100SBT3G 110B NP1100SCT3G 110C NP1300SAT3G 130A NP1300SBT3G 130B NP1300SCT3G 130C NP1500SAT3G 150A NP1500SBT3G 150B NP1500SCT3G 150C NP1800SAT3G 180A NP1800SBT3G 180B NP1800SCT3G 180C NP2100SAT3G 210A NP2100SBT3G 210B NP2100SCT3G 210C NP2300SAT3G 230A NP2300SBT3G 230B NP2300SCT3G 230C NP2600SAT3G 260A NP2600SBT3G 260B NP2600SCT3G 260C NP3100SAT3G 310A NP3100SBT3G 310B NP3100SCT3G 310C NP3500SAT3G 350A NP3500SBT3G 350B NP3500SCT3G

350C

?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

PACKAGE DIMENSIONS

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198

2.

2.CONTROLLING DIMENSION: INCH.

3.D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.

DIM MIN MAX MIN MAX MILLIMETERS

INCHES

A 0.1600.180 4.06 4.57

B 0.1300.150 3.30 3.81

C 0.0750.095 1.90 2.41

D 0.0770.083 1.96 2.11H 0.00200.00600.0510.152J 0.0060.0120.150.30K 0.0300.0500.76 1.27P 0.020 REF 0.51 REF S 0.2050.220 5.21 5.59

SMB

CASE 403C?01

*For additional information on our Pb?Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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