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BLF248,112;中文规格书,Datasheet资料

DATA SHEET

Product speci?cation Supersedes data of1997Dec172003Sep02

DISCRETE SEMICONDUCTORS BLF248

VHF push-pull power MOS transistor

M3D091

VHF push-pull power MOS transistor BLF248

FEATURES

?High power gain

?Easy power control

?Good thermal stability

?Gold metallization ensures excellent reliability. DESCRIPTION

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange package,with two ceramic caps.The mounting flange provides the common source connection for the transistors.

PINNING - SOT262 A1

PIN DESCRIPTION

1drain 1

2drain 2

3gate1

4gate 2

5source

PIN CONFIGURATION

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling.For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.All persons who handle,use or dispose of this product should be aware of its nature and of the necessary safety precautions.After use,dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

halfpage

MSB008

Top view

MBB157

QUICK REFERENCE DATA

RF performance at T h = 25°C in a push-pull common source test circuit.

MODE OF OPERATION

(MHz)

V DS

(V)

P L

(W)

G p

(dB)

ηD

(%)

class-AB22528300>10>55

17528300typ. 13typ. 67

VHF push-pull power MOS transistor

BLF248

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).Per transistor section unless otherwise speci?ed.THERMAL CHARACTERISTICS SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.UNIT V DS drain-source voltage ?65V V GS gate-source voltage ?±20V I D drain current (DC)?25A P tot total power dissipation T mb ≤25°C total device;both sections equally loaded

?500W T stg

storage temperature

?65150

°C

SYMBOL PARAMETER

CONDITIONS

VALUE UNIT R th j-mb thermal resistance from junction to mounting base

total device; both sections equally loaded.

0.35K/W R th mb-h

thermal resistance from mounting base to heatsink

total device; both sections equally loaded.

0.15

K/W

Fig.2 DC SOAR.(1)Current is this area may be limited by R DSon .(2)T mb =25°C.

Total device; both sections equally loaded.

handbook, halfpage

110

102

V DS (V)

I D (A)

102

(1)

MRA933

(2)

Fig.3 Power derating curves.

(1)Continuous operation.

(2)Short-time operation during mismatch.Total device; both sections equally loaded.

handbook, halfpage

050 100

150

600

200

400

MGP203

T h (°C)

P tot (W)(2)

(1)

VHF push-pull power MOS transistor BLF248

CHARACTERISTICS

T j=25°C unless otherwise speci?ed.

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT Per section

V(BR)DSS drain-source breakdown voltage V GS=0; I D=100mA65??V

I DSS drain-source leakage current V GS=0;V DS=28V??5mA I GSS gate-source leakage current V GS=±20V; V DS=0??1μA

V GSth gate-source threshold voltage I D=100mA; V DS=10V2? 4.5V

?V GS gate-source voltage difference of

both transistor sections

I D=100mA; V DS=10V??100mV g fs forward transconductance I D=8A; V DS=10V57.5?S

g fs1/g fs2forward transconductance ratio of

both transistor sections

I D=8A; V DS=10V0.9? 1.1

R DSon drain-source on-state resistance I D=8A; V GS=10V?0.10.15?

I DSX on-state drain current V GS=10V; V DS=10V?37?A

C is input capacitance V GS=0; V DS=28 V; f=1MHz?500?pF

C os output capacitance V GS=0; V DS=28V; f=1MHz?360?pF

C rs feedback capacitance V GS=0; V DS=28V; f=1MHz?46?pF

V GS group indicator

GROUP

LIMITS

(V)GROUP

LIMITS

(V)

MIN.MAX.MIN.MAX.

A 2.0 2.1O 3.3 3.4

B 2.1 2.2P 3.4 3.5

C 2.2 2.3Q 3.5 3.6

D 2.3 2.4R 3.6 3.7

E 2.4 2.5S 3.7 3.8

F 2.5 2.6T 3.8 3.9

G 2.6 2.7U 3.9 4.0

H 2.7 2.8V 4.0 4.1 J 2.8 2.9W 4.1 4.2 K 2.9 3.0X 4.2 4.3 L 3.0 3.1Y 4.3 4.4 M 3.1 3.2Z 4.4 4.5 N 3.2 3.3

VHF push-pull power MOS transistor BLF248

Fig.4

Temperature coefficient of gate-source voltage as a function of drain current;typical values per section.

V DS =10 V.

handbook, halfpage

?5MGP204

10?1

I D (A)

T.C.(mV/K)

Fig.5

Drain current as a function of gate-source voltage; typical values per section.

V DS = 10 V;T j =25°C.

handbook, halfpage

051020

MGP205

I D (A)V GS (V)

Fig.6

Drain-source on-state resistance as a function of junction temperature; typical values per section.

I D =8 A; V GS =10 V.handbook, halfpage

050100

150

200

100

MGP206

R DSon (m ?)

T j (°C)

Fig.7

Input and output capacitance as functions of drain-source voltage; typical values per section.

V GS =0; f = 1 MHz.

handbook, halfpage

0102040

1500

500

1000

MGP207

C (pF)C is C os

V DS (V)

VHF push-pull power MOS transistor BLF248

Fig.8

Feedback capacitance as a function of

drain-source voltage; typical values per section.

V GS =0; f = 1 MHz.

handbook, halfpage

0102040

600200

400

MGP208

C rs (pF)V DS (V)

APPLICATION INFORMATION FOR CLASS-AB OPERATION T h = 25°C;R th mb-h = 0.15 K/W,unless otherwise speci?ed.

RF performance in a linear ampli?er in a common source class-AB circuit.

R GS =536?per section; optimum load impedance per section = 0.79? j0.11?.

Ruggedness in class-AB operation

The BLF248 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions:

V DS = 28 V; f =225 MHz at rated output power.

MODE OF OPERATION f (MHz)V DS (V)P L (W)G p (dB)ηD (%)class-AB

22528300>10typ. 11.5>55typ. 65175

300

typ. 13

typ. 67

VHF push-pull power MOS transistor BLF248

Fig.9

Power gain and efficiency as functions of load power; typical values.Class-AB operation; V DS = 28 V;I DQ = 2×250 mA;R GS =536?(per section); Z L =0.79?j0.11?(per section); f = 225 MHz.handbook, halfpage

010*******

8060

20040

MGP209

300

P L (W)

G p (dB)G p

ηD (%)ηD

T h = 25 °C

25 °C 70 °C

70 °C

Fig.10Load power as a function of input power;

typical values.

Class-AB operation; V DS = 28 V;I DQ = 2×250 mA;R GS =536?(per section); Z L =0.79? j0.11?(per section); f = 225 MHz.

handbook, halfpage

0102040

400

300

100

200

MGP210

P L (W)P IN (W)

T h = 25 °C

70 °C

2003Sep 02

Philips Semiconductors

Product speci?cation

VHF push-pull power MOS transistor

BLF248

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handbook, full pagewidth

C19

C14

C10

C11

C31

C32

C33

C34

IC1

R2R7A

C15

C20

C21

L15

C29

L22

L24

L23

C30

L21

L20

L18

L19

L12C4

50 ?input

D.U.T.

C13

C12

C18

C16

L13L10L16

L17C25

C17

V DD1

C23C22C24C27C28

50 ?output

MGP211

C26

L11

L14

V DD1

V DD2

Fig.11 Test circuit for class-AB operation.

f = 225 MHz.

https://www.wendangku.net/doc/3211946094.html,/

VHF push-pull power MOS transistor BLF248

List of components class-AB test circuit;(see Figs11 and 12)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2multilayer ceramic chip capacitor;

note12×56pF

+18pF in parallel, 500V

C3?lm dielectric trimmer2to9pF222280909005 C4multilayer ceramic chip capacitor;

note1

47pF, 500V

C5?lm dielectric trimmer5to 60pF222280908003

C6, C7, C9,

C10, C12, C15, C31, C34multilayer ceramic chip capacitor;

note1

1nF, 500V

C8, C11, C16,

C21, C32

multilayer ceramic chip capacitor100nF, 50V222285247104

C13, C14, C18, C19multilayer ceramic chip capacitor;

note1

510pF, 500V

C17, C20, C33electrolytic capacitor10μF, 63V C22multilayer ceramic chip capacitor;

note1

82pF, 500V

C23multilayer ceramic chip capacitor;

note110pF+30pF

in parallel, 500V

C24, C28?lm dielectric trimmer 2 to 18 pF222280909006

C25, C26multilayer ceramic chip capacitor;

note139pF+47pF

in parallel, 500V

C27multilayer ceramic chip capacitor;

note1

18pF, 500V

C29, C30multilayer ceramic chip capacitor;

note13×100pF

in parallel, 500V

L1, L3, L22, L24stripline; note250? 4.8×80 mm

L2, L23semi-rigid cable; note350?ext. dia. 3.6mm

ext. conductor

length 80mm

L4, L5stripline; note243?6×32.5mm

L6, L7, L10, L11stripline; note243?6×10.5mm

L8, L9stripline; note243?6×3mm

L12, L15grade 3B Ferroxcube wide-band

HF choke

2 in parallel431202036642

L13, L14 2 turns enamelled 1.6mm copper

wire 25nH int. dia. 5mm

leads 2×7mm

space 2.5mm

L16, L17stripline; notes2 and443?6×3mm L18, L19stripline; notes2 and 443?6x35mm L20, L21stripline; notes2 and 443?6×9mm R1, R610 turns potentiometer50k?

R2, R50.4W metal ?lm resistor1k?

VHF push-pull power MOS transistor BLF248

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. R3, R40.4W metal ?lm resistor536?

R7, R81W metal ?lm resistor10?±5%

R91W metal ?lm resistor 3.16k?

IC178L05 voltage regulator

Notes

1.American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2.L1, L3 to L11, L16 to L22 and L24 are micro-striplines on a double copper-clad printed-circuit board, with glass

microfibre PTFE dielectric (εr=2.2), thickness1?16inch, thickness of copper sheet 2×35μm.

3.L2 and L23 are soldered on striplines L1 and L24 respectively.

4. A copper strap, thickness 0.8 mm, is soldered on striplines L16 to L21.

分销商库存信息: NXP

BLF248,112