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S68N08R

S68N08R

S68N08R/S

S68N08R

S68N08R

S68N08R

S68N08R

N-Channel MOSFET

Features

? 68V, 80A,Rds(on)(typ)=6.5m ? @Vgs=10V ? High Ruggedness ? Fast Switching

? 100% Avalanche Tested ? Improved dv/dt Capability

General Description

This Power MOSFET is produced using Si-Tech’s advanced Trench MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.

Absolute Maximum Ratings

S68N08R

Thermal Characteristics

S68N08R

S68N08R

S68N08R/S Electrical Characteristics (T C=25℃unless otherwise noted)

S68N08R

Source-Drain Diode Characteristics (T C=25℃unless otherwise noted)

S68N08R

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=0.5mH, I AS=55A, V DD=50V, R G=25 , Starting T J=25℃

3. Pulse Width ≤300 us; Duty Cycle≤2%

S68N08R

S68N08R/S

S68N08R

S68N08R

S68N08R

S68N08R

S68N08R

S68N08R

I D - D r a i n C u r r e n t (A )

I D - D r a i n C u r r e n t (A )

I D - D r a i n C u r r e n t (A )

N o r m a l i z e d E f f e c t i v e T r a n s i e n t

Typical Characteristics

Output Characteristics

Drain Current

V DS - Drain-Source Voltage (V)

Safe Operation Area

V DS - Drain-Source Voltage (V)

T j - Junction Temperature (°C )

Thermal Transient Impedance

Square Wave Pulse Duration (sec)

S68N08R

S68N08R/S

S68N08R

S68N08R

S68N08R

S68N08R

S68N08R

S68N08R

S68N08R

R D S (O N ) - O n - R e s i s t a n c e (m ? )

P t o t - P o w e r (W )

N o r m a l i z e d T h r e s h o l d V o l t a g e

R D S (O N ) - O n R e s i s t a n c e (m ?)

Typical Characteristics

Power Dissipation Drain-Source On Resistance

T j - Junction Temperature (°C )

I D - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage

V GS - Gate-Source Voltage (V)

T j - Junction Temperature (°C)

S68N08R

S68N08R/S

S68N08R

S68N08R

S68N08R

S68N08R

S68N08R

C - C a p a c i t a n c e (p F )

N o r m a l i z e d O n R e s i s t a n c e

V G S - G a t e -S o u r c e V o l t a g e (V )

I S - S o u r c e C u r r e n t (A )

Typical Characteristics

Drain-Source On Resistance

Source-Drain Diode Forward

T j - Junction Temperature (°C)

V SD - Source-Drain Voltage (V)

Capacitance

Gate Charge

V DS - Drain-Source Voltage (V)

Q G - Gate Charge (nC)

S68N08R

S68N08R/S Avalanche Test Circuit and Waveforms

S68N08R

Switching Time Test Circuit and Waveforms

S68N08R

S68N08R

S68N08R/S Package Outline

Dimensions are shown in millimeters

R:TO220

S68N08R

S68N08R

S68N08R

S68N08R

S68N08R/S S:TO263(D2PAK)

S68N08R

S68N08R

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