DATA SHEET
Product speci?cation Supersedes data of 1998 Jan 292003Sep26
DISCRETE SEMICONDUCTORS BLF404
UHF power MOS transistor
M3D175
UHF power MOS transistor BLF404
FEATURES
?High power gain
?Easy power control
?Gold metallization
?Good thermal stability
?Withstands full load mismatch
?Designed for broadband operation.
APPLICATIONS
?Communication transmitters in the VHF/UHF range with a nominal supply voltage of 12.5V.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS power transistor in an8-lead SOT409A SMD package with a ceramic cap.PINNING - SOT409A
PIN DESCRIPTION
1, 8source
2, 3gate
4, 5source
6, 7drain
Fig.1 Simplified outline and symbol. halfpage
MBK150
Top view
14
85
s
d
g
MBB072
QUICK REFERENCE DATA
RF performance at T mb≤60°C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V DS
(V)
P L
(W)
G p
(dB)
ηD
(%)
CW class-AB50012.54≥10≥50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
UHF power MOS transistor
BLF404
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.UNIT
V DS drain-source voltage ?40V V GS gate-source voltage ?±20V I D drain current (DC)? 1.5A P tot total power dissipation T mb ≤85°C
?8.3W
T stg storage temperature ?65+150°C T j
junction temperature
?200
°C
Fig.2 DC SOAR.
(1)Current in this area may be limited by R DSon .(2)T mb =85°C.
handbook, halfpage
MGM522
10
1
10?1
1
10
102
V DS (V)
I D (A)
(2)
(1)THERMAL CHARACTERISTICS SYMBOL PARAMETER
CONDITIONS
VALUE UNIT R th j-mb
thermal resistance from junction to mounting base
T mb ≤85°C, P tot =8.3W
12.1
K/W
UHF power MOS transistor BLF404
CHARACTERISTICS
T j=25°C unless otherwise speci?ed.
SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT V(BR)DSS drain-source breakdown voltage V GS=0; I D=5mA40??V
V GSth gate-source threshold voltage I D=50mA; V DS=10V2? 4.5V
I DSS drain-source leakage current V GS=0; V DS=12.5V??0.5mA
I GSS gate-source leakage current V GS=±20V; V DS=0??1μA
I DSX on-state drain current V GS=15V; V DS=10V? 2.3?A
R DSon drain-source on-state resistance I D=0.7A; V GS=15V? 1.8 2.7?
g fs forward transconductance I D=0.7A; V DS=10V200270?mS
C is input capacitance V GS=0; V DS=12.5V; f=1MHz?14?pF
C os output capacitance V GS=0; V DS=12.5V; f=1MHz?17?pF
C rs feedback capacitance V GS=0; V DS=12.5V; f=1MHz?3?pF
V GS group indicator
GROUP
LIMITS
(V)GROUP
LIMITS
(V)
MIN.MAX.MIN.MAX.
A 2.0 2.1O 3.3 3.4
B 2.1 2.2P 3.4 3.5
C 2.2 2.3Q 3.5 3.6
D 2.3 2.4R 3.6 3.7
E 2.4 2.5S 3.7 3.8
F 2.5 2.6T 3.8 3.9
G 2.6 2.7U 3.9 4.0
H 2.7 2.8V 4.0 4.1 J 2.8 2.9W 4.1 4.2 K 2.9 3.0X 4.2 4.3 L 3.0 3.1Y 4.3 4.4 M 3.1 3.2Z 4.4 4.5 N 3.2 3.3
UHF power MOS transistor BLF404
Fig.3
Temperature coefficient of gate-source voltage as a function of drain current;typical values.
V DS =10V.
handbook, halfpage
T.C.(mV/K)
515
25
?510
102103
104
MRA254
I D (mA)
Fig.4
Drain current as a function of gate-source voltage; typical values.
V DS =10V; T j =25°C.
handbook, halfpage
01
2
3
4812
1620MRA249
I D (A)V GS (V)
Fig.5
Drain-source on-state resistance as a function of junction temperature; typical values.
I D =0.7A; V GS =15V.
handbook, halfpage
1234
5
050100
T j
(o C)150
MRA253
R DSon (?)
Fig.6
Input and output capacitance as functions of drain-source voltage; typical values.
V GS =0; f =1MHz; T j =25°C.
handbook, halfpage
010
20
30
40
50
4812
16
C (pF)MRA246
V DS (V)
C is
C os
UHF power MOS transistor BLF404
Fig.7
Feedback capacitance as a function of drain-source voltage; typical values.
V GS =0; f =1MHz; T j =25°C.
handbook, halfpage
02
4
6
8
10
4
8
12
16
MRA256
V DS (V)
C rs (pF)
APPLICATION INFORMATION
RF performance at T mb ≤60°C in a common source test circuit with the device soldered on a printed-circuit board with through metallized holes.
Ruggedness in class-AB operation
The BLF404is capable of withstanding a load mismatch corresponding to VSWR =10:1through all phases under the following conditions: f =500MHz; V DS =12.5V; P L =4W; T mb ≤60°C.
MODE OF OPERATION f (MHz)V DS (V)I DQ (A)P L (W)G p (dB)ηD (%)CW, class-AB
500
12.5
50
4
≥10≥50typ.11.5
typ.55
UHF power MOS transistor BLF404
Fig.8
Power gain and drain efficiency as functions of load power; typical values.
CW, class-AB operation; f =500MHz; V DS =12.5V;I DQ =50mA; T mb ≤60°C.handbook, halfpage
2
4
6
16
20
12408
MGM520
P L (W)
G p (dB)
G p
ηD (%)ηD
10080
20
40
60
CW, class-AB operation; f =500MHz; V DS =12.5V;I DQ =50mA; T mb ≤60°C.
Fig.9
Load power as a function of drive power;typical values.
handbook, halfpage
06
2
4
600
MGM521
200400
P L (W)P D (mW)
Fig.10 Test circuit for class-AB operation at f =500MHz.
handbook, full pagewidth
MGM523
input 50 ?
output 50 ?
C4
C2
R5
R1R6
R2C7
C9C13
C12C1
C8
C3
C6C5
L3
L2
+V D
L5
L10
L11
L6
L7
C11
C10
L4
L8
L9
DUT
R3
R4
L1
UHF power MOS transistor
BLF404
List of components;see Figs 10and 11.Notes
1.American Technical Ceramics type 100A or capacitor of same quality.
2.The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr =2.2);
thickness 0.79mm, thickness of the copper sheet 2x 35μm.
COMPONENT DESCRIPTION
VALUE DIMENSIONS
CATALOGUE NO.
C1electrolytic capacitor
4.7μF , 10V C2, C3multilayer ceramic chip capacitor 47nF C4multilayer ceramic chip capacitor; note 118pF C5, C10multilayer ceramic chip capacitor; note 1180pF C6, C11multilayer ceramic chip capacitor; note 1270pF C7multilayer ceramic chip capacitor; note 122pF C8multilayer ceramic chip capacitor; note 18.2pF C9multilayer ceramic chip capacitor; note 1 2.7pF C12multilayer ceramic chip capacitor; note 1 1.2pF C13multilayer ceramic chip capacitor; note 112pF
L1
2turns 1mm enamelled copper wire on a grade 4B1 Ferroxcube core ext. dia.=4.2mm int. dia.=2mm length =6mm L23turns 1mm enamelled copper wire int. dia.=4.6mm leads =2x 5mm L3bi?lar coil lead dia.=0.8mm L4bi?lar coil lead dia.=1mm L5stripline; note 250?8.8×2.38mm L6stripline; note 250? 5.8×2.38mm L7stripline; note 250? 6.8×2.38mm L8stripline; note 250? 3.76×2.38mm L9stripline; note 250? 5.8×2.38mm L10stripline; note 250? 4.48×2.38mm L11stripline; note 250? 3.13×2.38mm R1, R2SMD resistor 3.9k ?R3metal ?lm resistor 1k ?, 0.25W R4metal ?lm resistor 22?, 0.25W R5metal ?lm resistor 10k ?, 0.25W R6potentiometer
10k ?
UHF power MOS transistor BLF404
Fig.11 Component layout for 500MHz class-AB test circuit.
The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.Earth connections from the component side to the ground plane are made by through metallization.
Dimensions in mm.
handbook, full pagewidth
MGM524
R3
C13
C10
C11C1
C2
C4
C5
C7
C8
C9
C12BLF404
31
2+V D
C3
R4
R5
L1
L2
L3
L4
L5
L6
L8
L7
L9
L10
L11
31
56
R1R6
R2
C6
UHF power MOS transistor BLF404
Fig.12Input impedance as a function of frequency
(series components); typical values.CW, class-AB operation; V DS =12.5V; I D =50mA;P L =4W; T mb ≤60°C.handbook, halfpage
0200400
600
8
6
2
4MGM517
f (MHz)
r i (?)0?20
?60?80?40x i (?)x i
r i
Fig.13Load impedance as a function of frequency
(series components); typical values.
CW, class-AB operation; V DS =12.5V; I D =50mA;P L =4W; T mb ≤60°C.
handbook, halfpage
0200400
600
16
12
4
8
MGM518
f (MHz)
Z L (?)R L
X L
Fig.14Power gain as a function of frequency
(series components); typical values.
CW, class-AB operation; V DS =12.5V; I DQ =50mA;P L =4W; T mb ≤60°C.
handbook, halfpage
0200400
600
30
20
10
MGM519
f (MHz)
G p (dB)
分销商库存信息: NXP
BLF404,115