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BLF404,115;中文规格书,Datasheet资料

DATA SHEET

Product speci?cation Supersedes data of 1998 Jan 292003Sep26

DISCRETE SEMICONDUCTORS BLF404

UHF power MOS transistor

M3D175

UHF power MOS transistor BLF404

FEATURES

?High power gain

?Easy power control

?Gold metallization

?Good thermal stability

?Withstands full load mismatch

?Designed for broadband operation.

APPLICATIONS

?Communication transmitters in the VHF/UHF range with a nominal supply voltage of 12.5V.

DESCRIPTION

Silicon N-channel enhancement mode vertical D-MOS power transistor in an8-lead SOT409A SMD package with a ceramic cap.PINNING - SOT409A

PIN DESCRIPTION

1, 8source

2, 3gate

4, 5source

6, 7drain

Fig.1 Simplified outline and symbol. halfpage

MBK150

Top view

MBB072

QUICK REFERENCE DATA

RF performance at T mb≤60°C in a common source test circuit.

MODE OF OPERATION

(MHz)

V DS

(V)

P L

(W)

G p

(dB)

ηD

(%)

CW class-AB50012.54≥10≥50

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.

UHF power MOS transistor

BLF404

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.UNIT

V DS drain-source voltage ?40V V GS gate-source voltage ?±20V I D drain current (DC)? 1.5A P tot total power dissipation T mb ≤85°C

?8.3W

T stg storage temperature ?65+150°C T j

junction temperature

?200

°C

Fig.2 DC SOAR.

(1)Current in this area may be limited by R DSon .(2)T mb =85°C.

handbook, halfpage

MGM522

10?1

102

V DS (V)

I D (A)

(2)

(1)THERMAL CHARACTERISTICS SYMBOL PARAMETER

CONDITIONS

VALUE UNIT R th j-mb

thermal resistance from junction to mounting base

T mb ≤85°C, P tot =8.3W

12.1

K/W

UHF power MOS transistor BLF404

CHARACTERISTICS

T j=25°C unless otherwise speci?ed.

SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT V(BR)DSS drain-source breakdown voltage V GS=0; I D=5mA40??V

V GSth gate-source threshold voltage I D=50mA; V DS=10V2? 4.5V

I DSS drain-source leakage current V GS=0; V DS=12.5V??0.5mA

I GSS gate-source leakage current V GS=±20V; V DS=0??1μA

I DSX on-state drain current V GS=15V; V DS=10V? 2.3?A

R DSon drain-source on-state resistance I D=0.7A; V GS=15V? 1.8 2.7?

g fs forward transconductance I D=0.7A; V DS=10V200270?mS

C is input capacitance V GS=0; V DS=12.5V; f=1MHz?14?pF

C os output capacitance V GS=0; V DS=12.5V; f=1MHz?17?pF

C rs feedback capacitance V GS=0; V DS=12.5V; f=1MHz?3?pF

V GS group indicator

GROUP

LIMITS

(V)GROUP

LIMITS

(V)

MIN.MAX.MIN.MAX.

A 2.0 2.1O 3.3 3.4

B 2.1 2.2P 3.4 3.5

C 2.2 2.3Q 3.5 3.6

D 2.3 2.4R 3.6 3.7

E 2.4 2.5S 3.7 3.8

F 2.5 2.6T 3.8 3.9

G 2.6 2.7U 3.9 4.0

H 2.7 2.8V 4.0 4.1 J 2.8 2.9W 4.1 4.2 K 2.9 3.0X 4.2 4.3 L 3.0 3.1Y 4.3 4.4 M 3.1 3.2Z 4.4 4.5 N 3.2 3.3

UHF power MOS transistor BLF404

Fig.3

Temperature coefficient of gate-source voltage as a function of drain current;typical values.

V DS =10V.

handbook, halfpage

T.C.(mV/K)

515

?510

102103

104

MRA254

I D (mA)

Fig.4

Drain current as a function of gate-source voltage; typical values.

V DS =10V; T j =25°C.

handbook, halfpage

4812

1620MRA249

I D (A)V GS (V)

Fig.5

Drain-source on-state resistance as a function of junction temperature; typical values.

I D =0.7A; V GS =15V.

handbook, halfpage

1234

050100

T j

(o C)150

MRA253

R DSon (?)

Fig.6

Input and output capacitance as functions of drain-source voltage; typical values.

V GS =0; f =1MHz; T j =25°C.

handbook, halfpage

010

4812

C (pF)MRA246

V DS (V)

C is

C os

UHF power MOS transistor BLF404

Fig.7

Feedback capacitance as a function of drain-source voltage; typical values.

V GS =0; f =1MHz; T j =25°C.

handbook, halfpage

MRA256

V DS (V)

C rs (pF)

APPLICATION INFORMATION

RF performance at T mb ≤60°C in a common source test circuit with the device soldered on a printed-circuit board with through metallized holes.

Ruggedness in class-AB operation

The BLF404is capable of withstanding a load mismatch corresponding to VSWR =10:1through all phases under the following conditions: f =500MHz; V DS =12.5V; P L =4W; T mb ≤60°C.

MODE OF OPERATION f (MHz)V DS (V)I DQ (A)P L (W)G p (dB)ηD (%)CW, class-AB

500

12.5

≥10≥50typ.11.5

typ.55

UHF power MOS transistor BLF404

Fig.8

Power gain and drain efficiency as functions of load power; typical values.

CW, class-AB operation; f =500MHz; V DS =12.5V;I DQ =50mA; T mb ≤60°C.handbook, halfpage

12408

MGM520

P L (W)

G p (dB)

G p

ηD (%)ηD

10080

CW, class-AB operation; f =500MHz; V DS =12.5V;I DQ =50mA; T mb ≤60°C.

Fig.9

Load power as a function of drive power;typical values.

handbook, halfpage

600

MGM521

200400

P L (W)P D (mW)

Fig.10 Test circuit for class-AB operation at f =500MHz.

handbook, full pagewidth

MGM523

input 50 ?

output 50 ?

R1R6

R2C7

C9C13

C12C1

C6C5

+V D

L10

L11

C11

C10

DUT

UHF power MOS transistor

BLF404

List of components;see Figs 10and 11.Notes

1.American Technical Ceramics type 100A or capacitor of same quality.

2.The striplines are on a double copper-clad printed-circuit board, with DUROID dielectric (εr =2.2);

thickness 0.79mm, thickness of the copper sheet 2x 35μm.

COMPONENT DESCRIPTION

VALUE DIMENSIONS

CATALOGUE NO.

C1electrolytic capacitor

4.7μF , 10V C2, C3multilayer ceramic chip capacitor 47nF C4multilayer ceramic chip capacitor; note 118pF C5, C10multilayer ceramic chip capacitor; note 1180pF C6, C11multilayer ceramic chip capacitor; note 1270pF C7multilayer ceramic chip capacitor; note 122pF C8multilayer ceramic chip capacitor; note 18.2pF C9multilayer ceramic chip capacitor; note 1 2.7pF C12multilayer ceramic chip capacitor; note 1 1.2pF C13multilayer ceramic chip capacitor; note 112pF

2turns 1mm enamelled copper wire on a grade 4B1 Ferroxcube core ext. dia.=4.2mm int. dia.=2mm length =6mm L23turns 1mm enamelled copper wire int. dia.=4.6mm leads =2x 5mm L3bi?lar coil lead dia.=0.8mm L4bi?lar coil lead dia.=1mm L5stripline; note 250?8.8×2.38mm L6stripline; note 250? 5.8×2.38mm L7stripline; note 250? 6.8×2.38mm L8stripline; note 250? 3.76×2.38mm L9stripline; note 250? 5.8×2.38mm L10stripline; note 250? 4.48×2.38mm L11stripline; note 250? 3.13×2.38mm R1, R2SMD resistor 3.9k ?R3metal ?lm resistor 1k ?, 0.25W R4metal ?lm resistor 22?, 0.25W R5metal ?lm resistor 10k ?, 0.25W R6potentiometer

10k ?

UHF power MOS transistor BLF404

Fig.11 Component layout for 500MHz class-AB test circuit.

The components are situated on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.Earth connections from the component side to the ground plane are made by through metallization.

Dimensions in mm.

handbook, full pagewidth

MGM524

C13

C10

C11C1

C12BLF404

2+V D

L10

L11

R1R6

UHF power MOS transistor BLF404

Fig.12Input impedance as a function of frequency

(series components); typical values.CW, class-AB operation; V DS =12.5V; I D =50mA;P L =4W; T mb ≤60°C.handbook, halfpage

0200400

600

4MGM517

f (MHz)

r i (?)0?20

?60?80?40x i (?)x i

r i

Fig.13Load impedance as a function of frequency

(series components); typical values.

CW, class-AB operation; V DS =12.5V; I D =50mA;P L =4W; T mb ≤60°C.

handbook, halfpage

0200400

600

MGM518

f (MHz)

Z L (?)R L

X L

Fig.14Power gain as a function of frequency

(series components); typical values.

CW, class-AB operation; V DS =12.5V; I DQ =50mA;P L =4W; T mb ≤60°C.

handbook, halfpage

0200400

600

MGM519

f (MHz)

G p (dB)

分销商库存信息: NXP

BLF404,115