文档库

最新最全的文档下载
当前位置:文档库 > SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

SUPER-SEMI

SUPER-MOSFET

Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor

SS*15N60S

Ver. 1.01

http://www.wendangku.net/doc/3bd996aebcd126fff7050be7.html

SSP15N60S / SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

Description

SJ-FET is new generation of high voltage MOSFET family that

is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

SJ-FET

September, 2013

Features

? 650V @TJ = 150 ℃ ? Typ. RDS(on) = 0.24Ω

? Ultra Low Gate Charge (typ. Qg = 43nC) ? 100% avalanche tested

Absolute Maximum Ratings

Symbol

Parameter SSP15N60S SSW/A15N60S SSF15N60S Unit

V DSS Drain-Source Voltage

600 V

I D Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) 15 9.4 15 9.4 15* 9.4* A I DM Drain Current - Pulsed (Note 1) 45

45 45*

A V GSS Gate-Source voltage

±30 V E AS Single Pulsed Avalanche Energy (Note 2) 9 mJ I AR Avalanche Current (Note 1) 3 A E AR Repetitive Avalanche Energy (Note 1) 4.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 15

V/ns P D Power Dissipation (TC = 25℃) -Derate above 25℃

156

156 34

W

W/℃ T J , T STG Operating and Storage Temperature Range -55 to +150

T L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter SSP15N60S SSW/A15N60S SSF15N60S Unit

R θJC Thermal Resistance, Junction-to-Case 0.6 0.8

3.6 ℃/W R θCS Thermal Resistance, Case-to-Sink Typ. 0.5 -- ℃/W R θJA

Thermal Resistance, Junction-to-Ambient

62

62 80

℃/W

* Drain current limited by maximum junction temperature.

Thermal Characteristics

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

TO-247 TO-3P

SSP15N60S SSW15N60S SSA15N60S SSF15N60S

Symbol Parameter

Conditions

Min Typ Max Unit

Off Characteristics BV DSS Drain-Source Breakdown Voltage

V GS = 0V, I D = 250μA, T J =

25℃

600 - - V V GS = 0V, I D = 250μA, T J = 150℃

- 650 - V ΔBV DSS / ΔT J Breakdown Voltage Temperature Coefficient

I D = 250μA, Referenced to 25℃

- 0.6 - V/℃ I DSS Zero Gate Voltage Drain Current V DS = 600V, V GS = 0V V DS = 480V, T C = 125℃ -

-

1

10 μA μA I GSSF Gate-Body Leakage Current, Forward V GS = 30V, V DS = 0V - - 100 nA I GSSR Gate-Body Leakage Current, Reverse V GS = -30V, V DS = 0V - - -100 nA On Characteristics

V GS(th) Gate Threshold Voltage

V DS = V GS , I D = 250μA 2.5 - 4.5 V R DS(on) Static Drain-Source On-Resistance V GS = 10V, I D = 7.5A

- 0.24 0.28 Ω g FS Forward Transconductance V DS = 40V, I D = 7.5A (Note 4) - 16 - S Rg

Gate resistance

f=1 MHz, open drain

--

3.5

--

Ω

Dynamic Characteristics

C iss Input Capacitance V DS = 25V, V GS = 0V, f = 1.0MHz

- 800 -- pF C oss Output Capacitance

- 180 -- pF C rss Reverse Transfer Capacitance - 8 - pF Switching Characteristics

t d(on) Turn-On Delay Time V DD = 400V, I D = 6.5A R G = 20Ω(Note 4, 5)

- 13 - ns t r

Turn-On Rise Time - 11 - ns t d(off) Turn-Off Delay Time - 100 - ns t f Turn-Off Fall Time - 12 - ns Q g Total Gate Charge V DS = 480V, I D = 6.5A V GS = 10V (Note 4, 5)

- 43 -- nC Q gs Gate-Source Charge - 5 - nC Q gd Gate-Drain Charge

- 22 - nC Drain-Source Diode Characteristics and Maximum Ratings

I S Maximum Continuous Drain-Source Diode Forward Current - - 12 A I SM Maximum Pulsed Drain-Source Diode Forward Current - - 40 A V SD Drain-Source Diode Forward Voltage V GS = 0V, I S = 6.5A

- - 1.5 V t rr Reverse Recovery Time

V GS = 0V, I S =6.5 dI F /dt =100A/μs (Note 4) - 345 - ns Q rr

Reverse Recovery Charge

-

4.5

-

μC

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=0.5mH, I AS =6.5A, VDD=150V, Starting TJ=25 ℃

3. I SD ≤10A, di/dt ≤ 200A/us, V DD ≤ BV DSS , Starting TJ = 25 ℃

4. Pulse Test: Pulse width ≤ 300us, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Electrical Characteristics TC = 25℃ unless otherwise noted

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

Switching times test circuit and waveform for inductive load Switching times test circuit

for inductive load

Switching times test circuit for inductive load Switching time waveform

Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform

SSP_F_W_A15N60S Rev1.01

Test circuit and waveform for diode characteristics

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

Test circuit for diode characteristics Diode recovery waveform

Package Outline

TO-220 COMMON DIMENIONS SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

TO-220 Full PAK

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

SSP_F_W_A15N60S Rev1.01

SSP_F_W_A15N60S Rev1.01

SSP15N60S/SSW/A15N60S/SSF15N60S 600V N-Channel MOSFET

TOP相关主题