GSMBZ5249B中文资料

GSMBZ5221B~GSMBZ5270B

Description

ZENER DIODES

Package Dimensions

Millimeter Millimeter REF . Min. Max. REF . Min. Max. A 0.80 1.10 L1

0.42 REF . A1 0 0.10 L 0.15 0.35 A2 0.80 1.00 b 0.25 0.40 D 1.80 2.20 c 0.10 0.25 E 1.15 1.35 e 0.65 REF . HE

1.80

2.40

Q1

0.15 BSC.

Thermal Characteristics

Characteristics

Symbol Max Unit Total Device Dissipation FR-5 Board Ta=25 , Derate above 25 PD 225 1.8 mW mW/ Total Device Dissipation

Alumina Substrate**TA=25 , Derate above 25 PD 300 2.4 mW mW/ Thermal Resistance Junction to Ambient R JA 417 /W Junction and Storage Temperature

Tj,Tstg

-55 to +150

*FR-5 - 1.0 0.75 0.062 in. **Alumina-0.4 0.3 0.024 in. 99.5% alumina.

Thermal Characteristics (V F =0.9V Max @ I F =10mA for all types.)

Test Current Zener Voltage

Vz(V) ZZK

IZ=0.25mA ZZT IZ=IZT Max. Reverse Current Device Marking Code IZT(mA) Min Nominal Max Max Max IR(uA) @VR(V) GSMBZ5221B 18A 20 2.280 2.4 2.520

1200 30 100 1.0 GSMBZ5222B 18B 20 2.375 2.5 2.625 1250 30 100 1.0 GSMBZ5223B 18C 20 2.565 2.7 2.835 1300 30 75 1.0 GSMBZ5224B 18D 20 2.660 2.8 2.940 1400 30 75 1.0 GSMBZ5225B 18E 20 2.850 3.0 3.150 1600 29 50 1.0 GSMBZ5226B 8A 20 3.135 3.3 3.465 1600 28 25 1.0 GSMBZ5227B 8B 20 3.420 3.6 3.780 1700 24 15 1.0 GSMBZ5228B 8C 20 3.705 3.9 4.095 1900 23 10 1.0 GSMBZ5229B 8D 20 4.085 4.3 4.515 2000 22 5.0 1.0 GSMBZ5230B 8E 20 4.465 4.7 4.935 1900 19 5.0 2.0 GSMBZ5231B 8F 20 4.845 5.1 5.355 1600 17 5.0 2.0 GSMBZ5232B 8G 20 5.320 5.6 5.880 1600 17 5.0 3.0 GSMBZ5233B 8H 20 5.700 6.0 6.300 1600 7.0 5.0 3.5 GSMBZ5234B 8J 20 5.890 6.2 6.510 1000 7.0 5.0 4.0 GSMBZ5235B 8K 20 6.460 6.8 7.140 750 5.0 3.0 5.0 GSMBZ5236B 8L 20 7.125 7.5 7.875 500 6.0 3.0 6.0 GSMBZ5237B 8M 20 7.790 8.2 8.610 500 8.0 3.0 6.5 GSMBZ5238B 8N 20 8.265 8.7 9.135 600 8.0 3.0 6.5 GSMBZ5239B 8P 20 8.645 9.1 9.555 600 10 3.0 7.0

Characteristics Curve