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AO4822A中文资料

AO4822A中文资料
AO4822A中文资料

Symbol

Typ Max 4862.574110R θJL 3540Maximum Junction-to-Lead C

Steady-State

°C/W

Thermal Characteristics Parameter

Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W °C/W Maximum Junction-to-Ambient A Steady-State AO4822A

AO4822A

Symbol

Min Typ

Max

Units BV DSS 30

V 1T J =55°C

5I GSS 100nA V GS(th)1 1.7

3

V I D(ON)30

A 13.416T J =125°C

202519.526

m ?g FS 23S V SD 0.75

1V I S

3

A C iss 955

1250pF C oss 145pF C rss 112pF R g

0.50.85?Q g (10V)17

24nC Q g (4.5V)912nC Q gs 3.4nC Q gd 4.7nC t D(on)5

6.5ns t r 6

7.5ns t D(off)1925ns t f 4.56ns t rr 16.721ns Q rr

6.7

10nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =10V, V DS =15V, I D =8.5A

Total Gate Charge Gate Drain Charge V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =15V, R L =1.8?, R GEN =3?

Turn-Off Fall Time

Total Gate Charge Gate Source Charge Gate resistance

V GS =0V, V DS =0V, f=1MHz

m ?V GS =4.5V, I D =6A

I S =1A,V GS =0V V DS =5V, I D =8.5A

R DS(ON)Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I DSS μA Gate Threshold Voltage V DS =V GS I D =250μA V DS =24V, V GS =0V

V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge

I F =8.5A, dI/dt=100A/μs

Drain-Source Breakdown Voltage On state drain current

I D =250μA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =8.5A

Reverse Transfer Capacitance I F =8.5A, dI/dt=100A/μs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 μs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev 0: Aug 2005

AO4822A

AO4822A

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