UF640-TA3-T中文资料

UNISONIC TECHNOLOGIES CO., LTD

UF640

MOSFET

18 A, 200 V, 0.18 OHM,

N-CHANNEL POWER MOSFET

DESCRIPTION

These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.

The UF640 suitable for resonant and PWM converter topologies.

FEATURES

* R DS(ON) =0.18?@V GS = 10V.

* Ultra Low gate charge (typical 43nC)

* Low reverse transfer capacitance (C RSS = typical 100 pF) * Fast switching capability * Avalanche energy specified

* Improved dv/dt capability, high ruggedness

SYMBOL

1.Gate

TO-220

1

1

TO-220F

*Pb-free plating product number: UF640L

ORDERING INFORMATION

Order Number Pin Assignment

Normal Lead Free Plating Package 1 2 3 Packing

UF640-TA3-T UF640L-TA3-T TO-220 G D S Tube UF640-TF3-T UF640L-TF3-T TO-220F G D S Tube

ABSOLUTE MAXIMUM RATING (T C = 25 , unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT

Drain Source Voltage V DSS 200 V Drain Gate Voltage (R GS = 20k ?) V DGR 200 V Gate Source Voltage V GSS ±20 V

T C = 25 18 A

Continuous Drain Current T C = 100 I D

11 A

Pulsed Drain Current (Note ) I DM 72 A Single Pulse Avalanche Energy Rating (Note ) E AS 580 mJ Maximum Power Dissipation 125 W

Dissipation Derating Factor P D

1.0

W/ Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER SYMBOL MIN TYP MAX UNIT

Thermal Resistance, Channel to Ambient θJA 62 °C/W Thermal Resistance, Channel to Case θJC 1 °C/W

ELECTRICAL CHARACTERISTICS (T C = 25, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Drain Source Breakdown Voltage BV DSS I D = 250μA, V GS = 0V 200 V Gate Threshold Voltage V GS(THR)V GS = V DS , I D = 250μA 2 4 V

V DS = Rated BV DSS , V GS = 0V 25 μA

Drain-Source Leakage Current I DSS V DS = 0.8 x Rated BV DSS , V GS = 0V,

T J = 125

250μA

On-State Drain Current I D(ON) V DS >I D(ON) x R DS(ON)MAX, V GS = 10V 18 A Gate-Source Leakage Current I GSS V GS = ±20V ±100nA Drain-Source On Resistance R DS(ON)I D = 10A, V GS = 10V 0.14 0.18? Forward Transconductance g FS V DS ≥ 10V, I D = 11A 6.7 10 S Input Capacitance C ISS 1275 pF

Output Capacitance C OSS 400 pF

Reverse Transfer Capacitance C RSS

V DS = 25V, V GS = 0V, f = 1MHz 100 pF Total Gate Charge

(Gate to Source + Gate to Drain) Q G(TOT) 43 64 nC

Gate-Source Charge Q GS 8 nC Gate-Drain “Miller” Charge Q GD

V GS = 10V, I D ≈ 18A, V DS = 0.8 x Rated BV DSS Gate Charge is

Essentially Independent of Operating Temperature I G(REF) =

1.5mA

22 nC Turn-On Delay Time t D(ON) 13 21 ns Rise Time t R 50 77 ns

Turn-Off Delay Time t D(OFF) 46 68 ns

Fall Time t F

V DD = 100V, I D ≈ 18A, R GS = 9.1?, R L = 5.4?, MOSFET Switching Times are Essentially Independent of

Operating Temperature

35 54 ns

ELECTRICAL CHARACTERISTICS(Cont.)

2. Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance

curve.

3. L = 3.37mH, V DD = 50V, R G = 25?, peak I AS = 18A, starting T J = 25 .

TEST CIRCUIT

V DS

V DD

AS

Figure 1A. Unclamped Energy Test Circuit

Figure 1B. Unclamped Energy Waveforms

p

BV

Figure 2A. Switching Time Test Circuit

Figure 2B. Resistive Switching Waveforms

R L

V

DD

V DS

SAMPLING RESISTOR

SAMPLING RESISTOR 0

Figure 3A. Gate Charge Test Circuit V DD

Figure 3B. Gate Charge Waveforms

TYPICAL CHARACTERISTICS

Saturation Characteristics

Drain to Source Voltage , V DS (V)

D r a i n C u r r

e n t , I D (A )

Drain to Source On Resistance v s. Gate

Voltage And Drain Current

Drain Current , I D (A)

D r a i n t o S o u r c e o n R e s i s t a n c e R D S (O N ) (?)