贴片三极管参数大全(材料相关)
贴片三极管上的印字与真实名称的对照表印字器件厂商类型封装器件用途及参数
-28 PDTA114WU Phi N SOT323 pnp dtr
-24 PDTC114TU Phi N SOT323 npn dtr R1 10k
-23 PDTA114TU Phi N SOT323 pnp dtr R1 10k
-20 PDTC114WU Phi N SOT323 npn dtr
-6 PMSS3906 Phi N SOT323 2N3906
-4 PMSS3904 Phi N SOT323 2N3904
0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz
1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain
1 2SC3587 Nec CX - npn RF fT10GHz
1 BA277 Phi I SOD523 VHF Tuner band switch diode
2 BST82 Phi M - n-ch mosfet 80V 175mA
2 MRF5711L Mot X SOT14
3 npn RF MRF571
2 DTCC114T Roh N - 50V 100mA npn sw + 10k base res
2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain
2 BAT62-02W Sie I SCD80 BAT16 schottky diode
2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz
3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain
3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA
3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA
3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA
3 BAT60A Sie I SOD323 10V 3A sw schottky
3 BAT62-02W Sie I SCD80 -
4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA
4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA
4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA
4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA
4 MRF5211L Mot X SOT143 pnp RF MRF521
4 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17.
5 dBm
4 BB664 Sie I SCD80 Varicap 42-2.5pF
5 SSTPAD5 Sil J - PAD-5 5pA leakage diode
5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p
5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA
5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA
5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA
6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p
6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA
6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA
6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA
9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA
9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA
9 BC849 Mot N SOT23 BC 549B
10 SSTPAD10 Sil J - PAD-10 10pA leakage diode
10 MRF9411L Mot X SOT143 npn Rf 8GHz MRF941
11 SO2369R SGS R SOT23R 2N2369
11 MRF9511L Mot X SOT143 npn RF 8GHz MRF951
11 MUN5311DW1 Mot DP SOT363 npn/pnp dtr 10k+10k
11 PDTA114EU Phi N SOT416 pnp dtr
12 MUN5312DW1 Mot DP SOT363 npn/pnp dtr 22k+22k
12 DTA123EUA Rho N SC70 pnp dtr 2k2+2k2 50V 100ma
12 DTA123EKA Rho N SC59 pnp dtr 2k2+2k2 res 50V 100ma
13 DTA143EUA Rho N SC70 pnp dtr 4k7+4k7 50V 100ma
13 DTA143EKA Rho N SC59 pnp dtr 4k7+4k7 50V 100ma
13 DTA143ECA Rho N SOT23 pnp dtr 4k7+4k7 50V 100ma
13 MA4CS103A M/A C SOT23 Schottky RF 20V 100mA
13 MUN5313DW1 Mot DP SOT363 npn/pnp dtr 47k+47k
14 BAT114-099R Sie DQ - Quad Schottky crossover ring 14 DTA114EUA Roh N SC70 pnp dtr 10k + 10k
14 DTA114EKA Roh N SC59 pnp dtr 10k + 10k
14 MUN5314DW1 Mot DP SOT363 npn/pnp dtr 10k R1
14 DTA114ECA Roh N SOT23 pnp dtr 10k + 10k
15 DTA124EUA Roh N SC70 pnp dtr 30V 50mA 22k+22k
15 DTA124EKA Roh N SC59 pnp dtr 30V 50mA 22k+22k
15 DTA124ECA Roh N SOT23 pnp dtr 30V 50mA 22k+22k
15 MUN5315DW1 Mot DP SOT363 npn/pnp dtr 10k R1
15 MMBT3960 Mot N - 2N3960
16 MUN5316DW1 Mot DP SOT363 npn/pnp dtr 4k7 R1
16 DTA144EUA Roh N SC70 pnp dtr 30V 50mA 47k+47k
16 DTA144EKA Roh N SC59 pnp dtr 30V 50mA 47k+47k
18 BFP181T Tfk X - npn Rf fT 7.8GHz 10V 20mA
18 PDTC143ZK Phi N SOT346 npn dtr 4k7+47k
19 PDTA143ZK Phi N SOT346 pnp dtr 4k7+47k
19 DTA115EUA Rho N SC70 pnp dtr 100k+100k 50V 100ma
19 DTA115EKA Rho N SC59 pnp dtr 100k+100k 50V 100ma
20 SSTPAD20 Sil J - PAD-20 20pA leakage diode
20 MRF5811 Mot X SOT143 npn Rf fT 5GHz 0.2A
21 Gali-21 MC AZ SOT89 DC-8GHz MMIC amp 14 dB gain
22 MMBT4209 Nat N SOT23 pnp sw 850MHz 2N4209
22 DTC123EUA Rho N SC70 npn dtr 2k2+2k2 50V 100ma
22 DTC123EKA Rho N SC59 npn dtr 2k2+2k2 50V 100ma
23 MMBT3646 Nat N SOT23 npn sw 350MHz 2N3646
23 DTC143EUA Roh N SC70 pnp dtr 50V 100mA 4k7+ 4k7
23 DTC143EKA Roh N SC59 pnp dtr 50V 100mA 4k7+ 4k7
24 MMBD2101 Nat C SOT23 Si diode 100V 200mA
24 DTC114ECA Roh N SOT23 npn dtr 50V 100mA 10k + 10k
24 DTC114EUA Roh N SC70 npn dtr 50V 100mA 10k + 10k
24 DTC114EKA Roh N SC59 npn dtr 50V 100mA 10k + 10k
24 2SC5006 Nec N - npn RF fT 4.5GHz @3V 7mA
25 MMBD2102 Nat K SOT23 Si diode 100V 200mA
25 DTC124ECA Roh N SOT23 npn dtr 50V 100mA 22k + 22k
25 DTC124EKA Roh N SC59 npn dtr 50V 100mA 22k + 22k
25 DTC124EUA Roh N SC70 npn dtr 50V 100mA 22k + 22k
26 MMBD2103 Nat D SOT23 dual MMBD1201
26 DTC144EKA Roh N SC59 npn dtr 50V 30mA 47k + 47k
26 DTC144EUA Roh N SC70 npn dtr 50V 30mA 47k + 47k
27 MMBD2104 Nat B SOT23 dual cc MMBD1201
28 BFP280T Tfk W - npn RF fT 7GHz 8V 10mA
28 MMBD2105 Nat A SOT23 dual ca MMBD1201
29 MMBD1401 Nat C SOT23 Si diode 200V 100mA
29 DTC115EE Roh N EMT3 npn dtr 100k +100k 50V 20mA
29 DTC115EUA Roh N SC70 npn dtr 100k +100k 50V 20mA
29 DTC115EKA Roh N SC59 npn dtr 100k +100k 50V 20mA
30 MUN5330DW1 Mot DP SOT363 npn/pnp dtr 1k0+1k0
31 MUN5331DW1 Mot DP SOT363 npn/pnp dtr 2k2+2k2
31 MMBD1402 Nat K SOT23 Si diode 200V 100mA
32 MUN5332DW1 Mot DP SOT363 npn/pnp dtr 4k7+4k7
32 MMBD1403 Nat D SOT23 dual Si diode 200V 100mA
32 BAT32 Sie CS - 18GHz zero-bias schottky
33 MUN5333DW1 Mot DP SOT363 npn/pnp dtr 4k7+47k
33 DTA143XE Roh N EMT3 pnp dtr 4k7+10k 50V 100mA
33 DTA143XUA Roh N SC70 pnp sw 4k7+10k bias res 50V 100mA 33 DTA143XKA Roh N SC59 pnp sw 4k7+10k bias res 50V 100mA 33 MMBD1404 Nat B SOT23 dual cc Si diode 200V 100mA
33 Gali-33 MC AZ SOT89 DC-4GHz MMIC amp 19dB gain
34 MUN5334DW1 Mot DP SOT363 npn/pnp dtr 22k+47k
34 MMBD1405 Nat A SOT23 dual ca Si diode 200V 100mA
34 2SC5007 Nec N - npn RF fT 7GHz @3V 7mA
35 MUN5335DW1 Mot DP SOT363 npn/pnp dtr 2k2+47k
35 DTA124XE Roh N EMT3 pnp dtr 22k+47k 50V 50mA
35 DTA124XUA Roh N SC70 pnp dtr 22k+47k 50V 50mA
35 DTA124XKA Roh N SC59 pnp dtr 22k+47k 50V 50mA
41 BAT14-115S Sie CS SOT173 40GHz schottky diode
41 BAT14-115R Sie CZ SOT173 40GHz schottky ring quad
42 BAT14-025S Sie CS SOT173 4GHz schottky diode
42 BAT14-025R Sie CZ SOT173 4GHz schottky ring quad
43 BAS40 Sie C SOT23 schottky diode 40V 100mA
43 DTA143EE Mot N SOT416 pnp dtr 4k7 + 4k7
43 DTC143XE Roh N EMT3 npn dtr 4k7+10k 50V 100mA
43 DTC143XUA Roh N SC70 npn dtr 4k7+10k 50V 100mA
43 DTC143XKA Roh N SC59 npn dtr 4k7+10k 50V 100mA
44 BAS40-04 Sie D SOT23 dual series BAS40
44 BAS40-04W Sie D SOT323 dual series BAS40
44 2SC5009 Nec N - npn RF fT 12GHz @3V 5mA
45 BAS40-05 Sie A SOT23 dual ca BAS40
45 BAS40-05W Sie A SOT323 dual ca BAS40
45 BAT14-055S Sie CS SOT173 8GHz schottky diode
45 BAT14-055R Sie CZ SOT173 8GHz schottky ring quad 45 DTC124XE Roh N EMT3 npn dtr 22k+47k 50V 50mA
45 DTC124XUA Roh N SC70 npn dtr 22k+47k 50V 50mA
45 DTC124XKA Roh N SC59 npn dtr 22k+47k 50V 50mA
46 BAS40-06 Sie B SOT23 dual cc BAS40
46 BAS40-06W Sie B SOT323 dual cc BAS40
46 MBT3946DW Mot DP - 2N3904/2N3906 pair
47 BAS40-07 Sie S SOT143 dual BAS40
47 BAS40-07W Sie S SOT343 dual BAS40
49 BAT14-095S Sie CS SOT173 18GHz shottky diode
49 BAT14-095R Sie CZ SOT173 18GHz schottky ring quad
50 SSTPAD50 Sil J - PAD-50 50pA leakage diode
51 BAT15-115S Sie CS SOT173 40GHz schottky diode
51 BAT15-115R Sie CZ SOT173 40GHz schottky ring quad
52 BAT15-025S Sie CS SOT173 4GHz schottky diode
52 BAT15-025R Sie CZ SOT173 4GHz schottky ring quad 52 Gali-52 MC AZ SOT89 DC-2GHz MMIC amp 23 dB gain 52 BAS52-02V Inf I SC79 Schottky diode 45V 750mA
52 DTA123YE Roh N EMT3 pnp dtr 2k2 +10k 50V 100mA
52 DTA123YUA Roh N SC70 pnp dtr 2k2 +10k 50V 100mA 52 DTA123YKA Roh N SC59 pnp dtr 2k2 +10k 50V 100mA 54 DTA114YE Roh N EMT3 pnp dtr 10k + 47k 50V 100mA 54 DTA114YUA Roh N SC70 pnp dtr 10k + 47k 50V 100mA
54 DTA114YKA Roh N SC59 pnp dtr 10k + 47k 50V 100mA
55 BAT15-055S Sie CS SOT173 8GHz schottky diode
55 BAT15-055R Sie CZ SOT173 8GHz schottky ring quad 55 Gali-55 MC AZ SOT89 DC-4GHz MMIC amp 21 dB gain
57 BFQ57 Sie CX SOT173 npn 6.5GHz 16V/35mA
58 BFQ58 Sie CX SOT173 npn 6.5GHz 16V/30mA
59 BAT15-095S Sie CS SOT173 18GHz schottky diode
59 BAT15-095R Sie CZ SOT173 18GHz schottky ring quad 62 DTC123YE Roh N EMT3 npn dtr 2k2 +10k 50V 100mA
62 DTC123YUA Roh N SC70 npn dtr 2k2 +10k 50V 100mA 62 DTC123YKA Roh N SC59 npn dtr 2k2 +10k 50V 100mA 64 DTC114YE Roh N EMT3 npn dtr 10k + 47k 50V 100mA
2SA1576A贴片三极管 SOT-323三极管封装2SA1576A参数
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors 2SA1576A TRANSISTOR (PNP) FEATURES z Excellent h FE linearity z Complements the 2SC4081 MAXIMUM RATINGS (T a =25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-50μA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-1mA,I B =0 -50 V Emitter-base breakdown voltage V (BR)EBO I E =-50μA,I C =0 -6 V Collector cut-off current I CBO V CB =-60V,I E =0 -0.1 μA Emitter cut-off current I EBO V EB =-6V,I C = 0 -0.1 μA DC current gain h FE V CE =-6V,I C =-1mA 120 560 Collector-emitter saturation voltage V CE(sat) I C =-50mA,I B =-5mA -0.5 V Transition frequency f T V CE =-12V,I C =-2mA,f =30MHz 140 MHz Collector output capacitance C ob V CB =-12V,I E =0,f =1MHz 4 5 pF CLASSIFICATION OF h FE Rank Q R S Range 120-270 180-390 270-560 Marking FQ FR FS ℃ ℃ A,May,2011 https://www.wendangku.net/doc/4015015891.html, 【南京南山半导体有限公司 — 长电三极管选型资料】
贴片三极管引脚_三极管的识别分类及测量
贴片三极管引脚三极管的识别分类及测量 符号：“Q、VT” 三极管有三个电极，即b、c、e，其中c为集电极（输入极）、b为基极（控制极）、e为发射极（输 出极） 三极管实物图： 贴片三极管功率三极管普通三极管金属壳三极管 二、三级管的分类： 按极性划分为两种：一种是NPN型三极管，是目前最常用的一种，另一种是PNP型三极管。按材料分为两种：一种是硅三极管，目前是最常用的一种，另一种是锗三极管，以前这种三极管用的多。三极按工作频率划分为两种：一种是低频三极管，主要用于工作频率比较低的地方；另一种是高频三极管，主要用于工作频率比较高的地方。按功率分为三种：一种是小功率三极管，它的输出功率小些；一种是中功率三极管，它的输出功率大些；另一种是大功率三极管，它的输出功率可以很大，主要用于大功率输出场合。 按用途分为：放大管和开关管。 三、三极管的组成： 三极管由三块半导体构成，对于ＮＰＮ型三极管由两块Ｎ型和一块Ｐ型半导体构成，如图Ａ所示，Ｐ型半导体在中间，两块Ｎ型半导体在两侧，各半导体所引出的电极见图中所示。在Ｐ型和Ｎ型半导体的交界面形成两个ＰＮ结，在基极与集电极之间的ＰＮ结称为集电结，在基极与发射极之间的ＰＮ结称为发射结。图Ｂ是ＰＮＰ型三极管结构示意图，它用两块Ｐ型半导体和一块Ｎ型半导体构成。 ＡＢ 四、三极管在电路中的工作状态：
三极管有三种工作状态：截止状态、放大状态、饱和状态。当三极管用于不同目的时，它的工作状 态是不同的。 1、截止状态：当三极管的工作电流为零或很小时，即IB=0时，IC和IE也为零或很小，三极管处于 截止状态。 2、放大状态：在放大状态下，IC=βIB，其中β(放大倍数)的大小是基本不变的（放大区的特征）。 有一个基极电流就有一个与之相对应的集电极电流。 3、饮和状态：在饮和状态下，当基极电流增大时，集电极电流不再增大许多，当基极电流进一步增 大时，集电极电流几乎不再增大。 工作状态 定义 电流特征 解流 截止状态 集电极与发射极之间电阻很大IB=0或很小，IC或IE为零或很 小因为IC＝βIB 利用电流为零或很小特征，可以判断三极管已处于截止状态 放大状态 集电极与发射极之间内阻受基极电流大小控制，基极电流大，其内阻小IC＝βIB IE=(1+β)IB 有一个基极电流就有一个对应的集电极电流和发射极电流，基极电流能有效地控制集电极电流和发射极电 流 饱和状态
三极管型号及参数大全
这些虽不能涵盖所有的三极管型号，例如3DD系列等，但是都是极其常用的型号，例如901系列，简直是无所不在。在网上查的电子元件手册都是卖书的广告，找到点参数型号确实不易。 S9013是NPN型三极管，放大倍数分为六级，在三极管上有标识： D级：64-91 E级：78-112 F级：96-135 G级：112-166 H级：144-220 I级：190-300 名称封装极性功能耐压电流功率频率配对管 D63328NPN音频功放开关100V7A40W达林顿 9013 21 NPN 低频放大50V0. 5A0. 625W 9012 9014 21 NPN 低噪放大50V0. 1A0. 4W 150HM Z9015 9015 21 PNP 低噪放大50V0. 1A0. 4W 150MHZ 9014 901821NPN高频放大30V0.05A0.4W1000MHZ 805021NPN高频放大40V1.5A1W100MHZ8550 855021PNP高频放大40V1.5A1W100MHZ8050 2N222221NPN通用60V0.8A0.5W25／200NS 2N23694ANPN开关40V0.5A0.3W800MHZ 2N29074ANPN通用60V0.6A0.4W26／70NS 2N305512NPN功率放大100V15A115WMJ2955 2N34406NPN视放开关450V1A1W15MHZ2N6609 2N377312NPN音频功放开关160V16A50W 2N390421ENPN通用60V0.2A 2N290621CPNP通用40V0.2A 2N2222A21铁NPN高频放大75V0.6A0.625W300MHZ 2N671821铁NPN音频功放开关100V2A2W 2N540121PNP视频放大160V0.8050三极管引脚图6A0.625W100MHZ2N5551 2N555121NPN视频放大160V0.6A0.625W100MHZ2N5401 2N568512NPN音频功放开关60V50A300W 2N627712NPN功放开关180V50A250W 901221PNP低频放大50V0.5A0.625W9013 2N667812NPN音频功放开关650V15A175W15MHZ 9012贴片PNP低频放大50V0.5A0.625W9013 3DA87A6NPN视频放大100V0.1A1W 3DG6B6NPN通用20V0.02A0.1W150MHZ 3DG6C6NPN通用25V0.02A0.1W250MHZ 3DG6D6NPN通用30V0.02A0.1W150MHZ MPSA4221ENPN电话视频放大300V0.5A0.625WMPSA92 MPSA9221EPNP电话视频放大300V0.5A0.625WMPSA42 MPS2222A21NPN高频放大75V0.6A0.625W300MHZ
常用贴片三极管主要参数及丝印
常用贴片三极管主要参数(SOT-23) 序号型号 TYPE 极性 POLA RITY P D (mW) I C (mA) BV CBO (V) BV CEO (V) h FE V CE(sat)I C/I B f TYPE (MHZ) 打标 Marking Min/Max I C mA V CE Volts Max Volts mA 1S9012PNP3005004025120/3505010.6500501502T1 2S9013NPN3005004025120/3505010.650050150J3 3S9014NPN2001005045200/1000150.31005150J6 4S9015PNP2001005045200/1000150.310010150M6 5S9018NPN20050251870/190 1.O50.51001600J8 6S8050NPN3005004025120/3505010.650050150J3Y 7S8550PNP3005004025120/3505010.6500501502TY 8SS8050NPN1001500402585/30010010.58008080Y1 9SS8550PNP1001500402585/30010010.58008080Y2 10C1815NPN20015060500130/400260.251001080HF 11A1015PNP2001505050130/400260.31001080BA 12C945NPN2001506050130/400160.310010150CR 13A733PNP2001506050120/475160.31001050CS 142SC1623NPN200100605090/600160.310010250L4、L5、L6、L7 15M28S NPN20010004020300/1000010010.556002010028S 16M8050NPN2001000402580/30010010.580080150Y11 17M8550PNP2001000402585/30010010.580080150Y21 18MMBT5551NPN30060018016080/25010 5.O0.550 5.O80G1 19MMBT5401PNP300600160150100/20010 5.O0.5500.51002L 20MMBTA42NPN300300300300100/20010100.2202501D 21MMBTA92NPN300300300300100/20010100.2202502D 222SC2412NPN2001506050120/560160.4505180BQ、BR、BS 232SC3356NPN300100201250/30020100.51057000R23、R24、R25 242SC3837NPN30050301856/39010100.52041500CN、CP、CQ、CR 252SC3838NPN30050201156/3905100.51053200AN、AP、AQ、AR 26BC807-16PNP2255005045100/25010010.7500502005A 27BC807-25PNP2255005045160/40010010.7500502005B 28BC807-40PNP2255005045250/60010010.7500502005C 29BC817-16NPN2255005045100/25010010.7500502006A 30BC817-25NPN2255005045160/40010010.7500502006B 31BC817-40NPN2255005045250/60010010.7500502006C 32BC846A NPN2251008065110/220250.610051001A 33BC846B NPN2251008065200/450250.610051001B 34BC847A NPN2251005045110/220250.610051001E 35BC847B NPN2251005045200/450250.610051001F 36BC847C NPN2251005045420/800250.610051001G 37BC848A NPN2251003030110/220250.610051001J 38BC848B NPN2251003030200/450250.610051001K 39BC848C NPN2251003030450/800250.610051001L 40BC858A PNP2251008065125/250250.6510051003A 41BC858B PNP2251008065220/475250.6510051003B 42BC857A PNP2251005045125/250250.6510051003E 43BC857B PNP2251005045220/475250.6510051003F 44BC875C PNP2251005045420/800250.6510051003G
MMBT2907AT贴片三极管 SOT-523三极管封装MMBT2907AT参数
A,Jan,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2907AT TRANSISTOR (PNP) FEATURES z Complementary to NPN Type (MMBT2222AT) z Small Package MARKING:2F MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =-10μA, I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C =-10mA, I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA, I C =0 -5 V Collector cut-off current I CBO V CB =-50V, I E =0 -10 nA Emitter cut-off current I EBO V EB =-5V, I C =0 -10 nA h FE(1) V CE =-10V, I C =-0.1mA 75 h FE(2) V CE =-10V, I C =-1mA 100 h FE(3) V CE =-10V, I C =-10mA 100 h FE(4) V CE =-10V, I C =-150mA 100 300 DC current gain h FE(5) V CE =-10V, I C =-500mA 50 I C =-150mA, I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat) I C =-500mA, I B =-50mA -1.6 V I C =-150mA, I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat) I C =-500mA, I B =-50mA -2.6 V Transition frequency f T V CE =-20V,I C =-50mA, f=100MHz 200 MHz Collector output capacitance C ob V CB =-10V, I E =0, f=1MHz 8 pF Emitter input capacitance C ib V EB =-2V, I C =0, f=1MHz 30 pF Delay time t d 10 ns Rise time t r V CC =-30V, I C =-150mA, I B1=-15mA 40 ns Storage time t s 225 ns Fall time t f V CC =-6V, I C =-150mA, I B1=I B2=-15mA 30 ns Symbol Parameter Value Unit V CBO Collector-Base Voltage -60 V V CEO Collector-Emitter Voltage -60 V V EBO Emitter-Base Voltage -5 V I C Collector Current -600 mA P C Collector Power Dissipation 150 mW R ΘJA Thermal Resistance From Junction To Ambient 833 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55～+150 ℃ 3. COLLECTOR
贴片三极管代码查找贴片,三极管资料及其封装
JX SOT23 BAV170 B dual cc Si diode low Ir JY SOT23 BAV199 dioda-2x JY SOT23 BAV199 D dual series Si diode lowIr JZ SOT23 BAW 156 JZ SOT23 BAW156 A dual ca Si diode low Ir K SCD80 BBY52-02W I UHF varicap 1.75-1.25pF K SOD323 BAT68-03W I BAT68 Schottky K SOT23 2SK211 JFET K SOT323 MRF917 N npn RF fT 6GHz K0 SOT23 HSMP-3830 C gp pin diode HP3830 K1 SOT23 BCW71 NPN K1 SOT23 BCW71 N BC107A K1 SOT23 HSMP-3831 K gp pin diode HP3830 K14 DTA114G N pnp sw 50V 100mA w. b-eres K15 DTA124G N pnp sw 50V 50mA w. b-e res K1p SOT23 BCW71 N BC107A K1t SOT23 BCW71 N BC107A K1X SOT23 KSC3265 NPN K2 SOT23 BCW72 NPN K2 SOT23 BCW72 N BC107B ZXT300 K2 SOT23 HSMP-3832 D dual HP3830 pin diode K24 DTC114G N npn sw 50V 100mA w. b-eres K25 DTA124G N pnp sw 50V 50mA w. b-e res K2p SOT23 BCW72 N BC107B ZXT300
贴片三极管参数
直插封装的型号贴片的型号极性Ft VCEO Ic hfe 配对型号9011 1T NPN 150MHz 18V 100mA 20~80 9012 2T PNP 150MHz 50v 625mA 30~90 9013 9013 J3 NPN 150MHz 40v 500mA 120~350 9014 J6 NPN 150MHz 18V 100mA 60~400 9015 9015 M6 PNP 150MHz 15v 100mA 60~600 9016 Y6 NPN 500MHz 20V 25mA 28~97 9018 J8 NPN 700MHZ 12V 100mA 28~72 S8050 J3Y NPN 150MHz 25V 1.5A 30~100 S8550 S8550 2TY PNP 200MHz 40V 1.5A 40~140 8050 Y1 NPN 100MHz 25V 1A 85~300 8550 8550 Y2 PNP 100MHz 40V 1.5A 2SA1015 BA PNP 1KHz 50V 2SC1815 HF NPN 80MHz 50V 150mA 70~700 1015 2SC945 CR NPN 250MHz 50V 100mA 200~600 2SA733 CS NPN 50MHz 60V 0.15A MMBT3904 1AM NPN 300MHz 60V 100mA 300@10mA 3906 MMBT3906 2A PNP MMBT2222 1P NPN 250MHz 60V 600mA 100@150mA MMBT5401 2L PNP 100MHz 150V 500mA 40~200 5551 MMBT5551 G1 NPN MMBTA42 1D NPN 50MHz 300V 100mA 40@10mA MMBTA92 2D PNP BC807-16 5A PNP BC807-25 5B PNP 80MHz 45V 500mA 250@100mA BC817-25 BC807-40 5C PNP 80MHz 45V 500mA 250@100mA BC817-40 BC817-16 6A NPN BC817-25 6B NPN BC817-40 6C NPN BC846A 1A NPN 250MHz 65V 100mA 140 BC856 BC846B 1B NPN 250 BC847A 1E NPN 45V BC857 BC847B 1F BC847C 1G NPN 420~800 BC848A 1J NPN 30V BC848B 1K BC848C 1L BC856A 3A PNP BC856B 3B BC857A 3E BC857B 3F BC858A 3J
贴片三极管参数全套汇编
贴片三极管上的印字与真实名称的对照表印字器件厂商类型封装器件用途及参数 -28 PDTA114WU Phi N SOT323 pnp dtr -24 PDTC114TU Phi N SOT323 npn dtr R1 10k -23 PDTA114TU Phi N SOT323 pnp dtr R1 10k -20 PDTC114WU Phi N SOT323 npn dtr -6 PMSS3906 Phi N SOT323 2N3906 -4 PMSS3904 Phi N SOT323 2N3904 0 2SC3603 Nec CX SOT173 Npn RF fT 7GHz 1 Gali-1 MC AZ SOT89 DC-8GHz MMIC amp 12dB gain 1 2SC3587 Nec CX - npn RF fT10GHz 1 BA277 Phi I SOD523 VHF Tuner band switch diode 2 BST82 Phi M - n-ch mosfet 80V 175mA 2 MRF5711L Mot X SOT14 3 npn RF MRF571 2 DTCC114T Roh N - 50V 100mA npn sw + 10k base res 2 Gali-2 MC AZ SOT89 DC-8GHz MMIC amp 16dB gain 2 BAT62-02W Sie I SCD80 BAT16 schottky diode 2 2SC3604 Nec CX - npn RF fT8GHz 12dB@2GHz 3 Gali-3 MC AZ SOT89 DC-3GHz MMIC amp 22dB gain 3 DTC143TE Roh N EMT3 npn dtr R1 4k7 50V 100mA 3 DTC143TUA Roh N SC70 npn dtr R1 4k7 50V 100mA 3 DTC143TKA Roh N SC59 npn dtr R1 4k7 50V 100mA 3 BAT60A Sie I SOD323 10V 3A sw schottky 3 BAT62-02W Sie I SCD80 - 4 DTC114TCA Roh N SOT23 npn dtr R1 10k 50V 100mA 4 DTC114TE Roh N EMT3 npn dtr R1 10k 50V 100mA 4 DTC114TUA Roh N SC70 npn dtr R1 10k 50V 100mA 4 DTC114TKA Roh N SC59 npn dtr R1 10k 50V 100mA 4 MRF5211L Mot X SOT143 pnp RF MRF521 4 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 17. 5 dBm 4 BB664 Sie I SCD80 Varicap 42-2.5pF 5 SSTPAD5 Sil J - PAD-5 5pA leakage diode 5 Gali-4 MC AZ SOT89 DC-4GHz MMIC amp 18 dBm o/p 5 DTC124TE Roh N EMT3 npn dtr R1 22k 50V 100mA 5 DTC124TUA Roh N SC70 npn dtr R1 22k 50V 100mA 5 DTC124TKA Roh N SC59 npn dtr R1 22k 50V 100mA 6 Gali-6 MC AZ SOT89 DC-4GHz MMIC amp 115 dBm o/p 6 DTC144TE Roh N EMT3 npn dtr R1 47k 50V 100mA 6 DTC144TUA Roh N SC70 npn dtr R1 47k 50V 100mA 6 DTC144TKA Roh N SC59 npn dtr R1 47k 50V 100mA 9 DTC115TUA Roh N SC70 npn dtr R2 100k 50V 100mA 9 DTC115TKA Roh N SC59 npn dtr R2 100k 50V 100mA 9 BC849 Mot N SOT23 BC 549B 10 SSTPAD10 Sil J - PAD-10 10pA leakage diode
2SC2881贴片三极管 SOT-89封装三极管2SC2881参数
A,Nov,2010 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC2881 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Transition Frequency z High Voltage z Complementary to 2SA1201 APPLICATIONS z Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (T a =25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO I C =1mA,I E = 0 120 V Collector-emitter breakdown voltage V (BR)CEO I C =10mA,I B =0 120 V Emitter-base breakdown voltage V (BR)EBO I E =1mA,I C =0 5 V Collector cut-off current I CBO V CB =120V,I E =0 0.1 μA Emitter cut-off current I EBO V EB =5V,I C =0 0.1 μA DC current gain h FE V CE =5V, I C =100mA 80 240 Collector-emitter saturation voltage V CE(sat) I C =500mA,I B =50mA 1 V Base-emitter voltage V BE V CE =5V, I C =0.5A 1 V Transition frequency f T V CE =5V,I C =100mA 120 MHz Collector output capacitance C ob V CB =10V, I E =0, f=1MHz 30 pF CLASSIFICATION OF h FE RANK O Y RANGE 80–160 120–240 MARKING CO1 CY1 Symbol Parameter Value Unit V CBO Collector-Base Voltage 120 V V CEO Collector-Emitter Voltage 120 V V EBO Emitter-Base Voltage 5 V I C Collector Current 800 mA P C Collector Power Dissipation 500 mW R θJA Thermal Resistance From Junction To Ambient 250 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ https://www.wendangku.net/doc/4015015891.html, 【南京南山半导体有限公司 — 长电贴片三极管选型资料】
贴片三极管主要参数一览表
I C V CE TYPE POLA RITY (mW) (mA) (V) (V) mA Volts Max Volts mA (MHZ) Marking 1S9012PNP 3005004025120/3505010.6500501502T12S9013NPN 3005004025120/3505010.650050150J33S9014NPN 2001005045200/1000150.31005150J64S9015PNP 2001005045200/1000150.310010150M65S9018NPN 20050251870/190 1.O 50.51001600J86S8050NPN 3005004025120/3505010.650050150J3Y 7S8550PNP 3005004025120/3505010.6500501502TY 8SS8050NPN 1001500402585/30010010.58008080Y19SS8550PNP 1001500402585/30010010.58008080Y210C1815NPN 20015060500130/400260.251001080HF 11A1015PNP 2001505050130/400260.31001080BA 12C945NPN 2001506050130/400160.310010150CR 13A733PNP 2001506050120/475160.31001050CS 142SC1623NPN 200100605090/600160.310010250L4、L5、L6、L7 15M28S NPN 20010004020300/1000010010.556002010028S 16M8050NPN 2001000402580/30010010.580080150Y1117M8550PNP 2001000402585/30010010.580080150Y2118MMBT5551NPN 30060018016080/25010 5.O 0.550 5.O 80G119MMBT5401PNP 300600160150100/20010 5.O 0.5500.51002L 20MMBTA42NPN 300300300300100/20010100.2202501D 21MMBTA92NPN 300300300300100/20010100.2202502D 222SC2412NPN 2001506050120/560160.4505180BQ、BR、BS 232SC3356NPN 300100201250/30020100.51057000R23、R24、R25242SC3837NPN 30050301856/39010100.52041500CN、CP、CQ、CR 252SC3838NPN 30050201156/3905100.51053200AN、AP、AQ、AR 26BC807-16PNP 2255005045100/25010010.7500502005A 27BC807-25PNP 2255005045160/40010010.7500502005B 28BC807-40PNP 2255005045250/60010010.7500502005C 29BC817-16NPN 2255005045100/25010010.7500502006A 30BC817-25NPN 2255005045160/40010010.7500502006B 31BC817-40NPN 2255005045250/60010010.7500502006C 32BC846A NPN 2251008065110/220250.610051001A 33BC846B NPN 2251008065200/450250.610051001B 34BC847A NPN 2251005045110/220250.610051001E 35BC847B NPN 2251005045200/450250.610051001F 36BC847C NPN 2251005045420/800250.610051001G 37BC848A NPN 2251003030110/220250.610051001J 38BC848B NPN 2251003030200/450250.610051001K 39BC848C NPN 2251003030450/800250.610051001L 40BC858A PNP 2251008065125/250250.6510051003A 41BC858B PNP 2251008065220/475250.6510051003B 42BC857A PNP 2251005045125/250250.6510051003E 43BC857B PNP 2251005045220/475250.6510051003F 44 BC875C PNP 225 100 50 45 420/800 2 5 0.65 100 5 100 3G 极性 型号 P D I C BV CBO BV CEO 序号V CE (sat) I C /I B f TYPE 打标 Min/Max
常用贴片三极管与直插三极管型号对应
1．直插贴片型号对应 直插封装的型号贴片的型号9011 1t 9012 2t 9013 j3 9014 j6 9015 m6 9016 y6 9018 j8 s8050 j3y s8550 2ty 8050 y1 8550 y2 2sa1015 ba 2sc1815 hf 2sc945 cr mmbt3904 1am mmbt3906 2a mmbt2222 1p mmbt5401 2l mmbt5551 g1 mmbta42 1d mmbta92 2d bc807-16 5a bc807-25 5b bc807-40 5c bc817-16 6a bc817-25 6b bc817-40 6c bc846a 1a bc846b 1b bc847a 1e bc847b 1f bc847c 1g bc848a 1j bc848b 1k bc848c 1l bc856a 3a bc856b 3b bc857a 3e bc857b 3f bc858a 3j
bc858b 3k bc858c 3l 2sa733 cs un2111 v1 un2112 v2 un2113 v3 un2211 v4 un2212 v5 un2213 v6 2sc3356 r23 2sc3838 ad 2n7002 702 2．直插贴片及极性、频率 直插封装的型号贴片的型号极性Ft VCEO Ic hfe 配对型号9011 1T NPN 150MHz 18V 100mA 28~132 9012 2T PNP 150MHz 25V 500mA 64~144 9013 9013 J3 NPN 9014 J6 NPN 150MHz 18V 100mA 60~400 9015 9015 M6 PNP 9016 Y6 NPN 500MHz 20V 25mA 28~97 9018 J8 NPN 700MHZ 12V 100mA 28~72 S8050 J3Y NPN 100MHz 25V 1.5A 45~300 S8550 S8550 2TY PNP 8050 Y1 NPN 100MHz 25V 1A 85~300 8550 8550 Y2 PNP 2SA1015 BA PNP 2SC1815 HF NPN 80MHz 50V 150mA 70~700 1015 2SC945 CR NPN 250MHz 50V 100mA 200~600 2SA733 CS MMBT3904 1AM NPN 300MHz 60V 100mA 300@10mA 3906 MMBT3906 2A PNP MMBT2222 1P NPN 250MHz 60V 600mA 100@150mA MMBT5401 2L PNP 100MHz 150V 500mA 40~200 5551 MMBT5551 G1 NPN MMBTA42 1D NPN 50MHz 300V 100mA 40@10mA MMBTA92 2D PNP BC807-16 5A PNP BC807-25 5B PNP 80MHz 45V 500mA 250@100mA BC817-25 BC807-40 5C PNP 80MHz 45V 500mA 250@100mA BC817-40 BC817-16 6A NPN BC817-25 6B NPN
全系列三极管应用参数-
全系列三极管应用参数--2 全系列三极管应用参数 名称封装极性功耐压电流功率频率配对管 D633 28 NPN 音频功放 100V 7A 40W 达林顿 9013 21 NPN 低频放大 50V 0.5A 0.625W 9012 9014 21 NPN 低噪放大 50V 0.1A 0.4W 150HMZ 9015 9015 21 PNP 低噪放大 50V 0.1A 0.4W 150MHZ 9014 9018 21 NPN 高频放大 30V 0.05A 0.4W 1000MHZ 8050 21 NPN 高频放大 40V 1.5A 1W 100MHZ 8550 8550 21 PNP 高频放大 40V 1.5A 1W 100MHZ 8050 2N2222 21 NPN 通用 60V 0.8A 0.5W 25／200NS 2N2369 4A NPN 开关 40V 0.5A 0.3W 800MHZ 2N2907 4A NPN 通用 60V 0.6A 0.4W 26／70NS 2N3055 12 NPN 功率放大 100V 15A 115W MJ2955 2N3440 6 NPN 视放开 450V 1A 1W 15MHZ 2N6609 2N3773 12 NPN 音频功放 160V 16A 50W 2N3904 21E NPN 通用 60V 0.2A 2N2906 21C PNP 通用 40V 0.2A 2N2222A 21铁 NPN 高频放大 75V 0.6A 0.625W 300MHZ 2N6718 21铁 NPN 音频功放 100V 2A 2W 2N5401 21 PNP 视频放大 160V 0.6A 0.625W 100MHZ 2N5551 2N5551 21 NPN 视频放大 160V 0.6A 0.625W 100MHZ 2N5401 2N5685 12 NPN 音频功放 60V 50A 300W 2N6277 12 NPN 功放开 180V 50A 250W 9012 21 PNP 低频放大 50V 0.5A 0.625W 9013 2N6678 12 NPN 音频功放 650V 15A 175W 15MHZ 9012 贴片 PNP 低频放大 50V 0.5A 0.625W 9013 3DA87A 6 NPN 视频放大 100V 0.1A 1W 3DG6B 6 NPN 通用 20V 0.02A 0.1W 150MHZ 3DG6C 6 NPN 通用 25V 0.02A 0.1W 250MHZ 3DG6D 6 NPN 通用 30V 0.02A 0.1W 150MHZ MPSA42 21E NPN 电话视频 300V 0.5A 0.625W MPSA92 MPSA92 21E PNP 电话视频 300V 0.5A 0.625W MPSA42 MPS2222A 21 NPN 高频放大 75V 0.6A 0.625W 300MHZ 9013 贴片 NPN 低频放大 50V 0.5A 0.625W 9012
贴片三极管封装上的印字,与真实名称的对照表
贴片三极管封装上的印字，与真实名称的对照表 印字器件名厂家类型封装器件用途及参数 T2 HSMS-286C HP D SOT323 dual series HSMS-286B T2 HSMS-2862 HP D SOT23 dual series HSMS-286B t23 PDTA114TU Phi N SOT323 pnp dtr R1 10k t24 PDTC114TU Phi N SOT323 npn dtr R1 10k t2A PMBT3906 Phi N SOT23 2N3906 t2A PMST3906 Phi N SOT323 2N3906 t2B PMBT2907 Phi N SOT23 2N2907 t2D PMBTA92 Phi N SOT23 MPSA92 pnp Vce 300V t2D PMSTA92 Phi N SOT323 MPSA92 pnp Vce 300V t2E PMBTA93 Phi N SOT23 MPSA93 pnp Vce 200V t2E PMSTA93 Phi N SOT323 MPSA93 pnp Vce 200V t2F PMBT2907A Phi N SOT23 2N2907A t2F PMBT2907A Phi N SOT323 2N2907A t2G PMBTA56 Phi N SOT23 MPSA56 t2G PMSTA56 Phi N SOT323 MPSA56 t2H PMBTA55 Phi N SOT23 MPSA55 t2H PMSTA55 Phi N SOT323 MPSA55 t2L PMBT5401 Phi N SOT23 2N5401 pnp 150V t2L PMST5401 Phi N SOT323 2N5401 pnp 150V T2p BCX18 Phi N SOT23 BC328 t2T PMBT4403 Phi N SOT23 2N4403 t2T PMST4403 Phi N SOT323 2N4403 T2t BCX18 Phi N SOT23 BC328 t2U PMBTA63 Phi N SOT23 MPSA63 darlington t2V PMBTA* Phi H SOT23 MPSA* darlington t2X PMBT4401 Phi N SOT23 2N4401 t2X PMST4401 Phi N SOT323 2N4401 T3 BSS63 Phi N SOT23 BSS68 T3 HSMS-286E HP A SOT323 ca dual HSMS-286B T3 HSMS-2863 HP A SOT23 ca dual HSMS-286B t31 PDTA143XT Phi N SOT23 pnp dtr4k7+10k t32 PDTC143XT Phi N SOT23 pnp dtr 4k7+10ks T32 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 60-105 T33 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 85-150 T34 2SC4182 Nec N SOT23 npn RF fT 1.1GHz @3V hfe 120-220 T4 BCX17R Phi R SOT23R BC327 T4 HSMS-286F HP B SOT323 cc dual HSMS-286B T4 HSMS-28* HP B SOT23 cc dual HSMS-286B T4 MBD330DW Mot DL SOT363 dual UHF schottky diode T42 2SC3545P Nec N - npn RF fT 2GHz hfe 50-100