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BCP28中文资料

BCP28中文资料

PNP Silicon Darlington Transistors

For general AF applications High collector current High current gain

Complementary types: BCP29/49 (NPN)

VPS05163

1

2

34

BCP28中文资料

EHA00008

Type Marking Pin Configuration Package BCP28 BCP48

BCP 28 BCP 48

1 = B 1 = B

2 = C 2 = C

3 = E 3 = E

4 = C 4 = C

SOT223 SOT223

Maximum Ratings Parameter

Symbol BCP28BCP48Unit Collector-emitter voltage V CEO 3060V

Collector-base voltage V CBO 4080Emitter-base voltage

V EBO

10

10

DC collector current I C 500mA 800mA

Peak collector current I CM Base current I B 100Peak base current

I BM 200W 1.5Total power dissipation , T S = 124 °C P tot Junction temperature 150°C

T j -65 (150)

Storage temperature

T stg

Thermal Resistance Junction - soldering point 1)

R thJS

17

K/W

1For calculation of R

thJA please refer to Application Note Thermal Resistance

BCP28中文资料

Electrical Characteristics at T A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min.typ.max.

DC Characteristics

Collector-emitter breakdown voltage

I C = 1 mA, I B = 0 BCP28

BCP48V(BR)CEO

30

60

-

-

-

-

V

Collector-base breakdown voltage

I C = 100 μA, I E = 0 BCP28

BCP48V(BR)CBO

40

80

-

-

-

-

Emitter-base breakdown voltage

I E = 10 μA, I C = 0

V(BR)EBO10--Collector cutoff current

V CB = 30 V, I E = 0 V CB = 60 V, I E = 0 BCP28

BCP48

I CBO

-

-

-

-

100

100

nA

Collector cutoff current

V CB = 30 V, I E = 0 , T A = 150 °C V CB = 60 V, I E = 0 , T A = 150 °C BCP28

BCP48

I CBO

-

-

-

-

10

10

μA

Emitter cutoff current

V EB = 4 V, I C = 0

I EBO--100nA

DC current gain 1)

I C = 100 μA, V CE = 1 V BCP28

BCP48h FE

4000

2000

-

-

-

-

-

DC current gain 1)

I C = 10 mA, V CE = 5 V BCP28

BCP48h FE

10000

4000

-

-

-

-

DC current gain 1)

I C = 100 mA, V CE = 5 V BCP28

BCP48h FE

20000

10000

-

-

-

-

DC current gain 1)

I C = 500 mA, V CE = 5 V BCP28

BCP48h FE

4000

2000

-

-

-

-

BCP28中文资料

Electrical Characteristics at T A = 25°C, unless otherwise specified.

Parameter

Symbol Unit

Values min.

max.

typ.

DC Characteristics

V

1

--V CEsat

Collector-emitter saturation voltage1) I C = 100 mA, I B = 0.1 mA

Base-emitter saturation voltage 1) I C = 100 mA, I B = 0.1 mA V BEsat

-- 1.5

AC Characteristics -MHz f T

-Transition frequency

I C = 50 mA, V CE = 5 V, f = 100 MHz 200

-Collector-base capacitance V CB = 10 V, f = 1 MHz

-C cb

pF

8

BCP28中文资料

Collector cutoff current I CBO = f (T A )V CB = V CEmax

BCP28中文资料

ΙTotal power dissipation P tot = f (T S )

BCP28中文资料

BCP28中文资料

mW

P t o t

Permissible pulse load P totmax /

BCP28中文资料

P totDC = f (t p )

10

BCP28中文资料

-6

105

5

1015

1023

1010-510-410-310-2

100

s

BCP28中文资料

totmax

P P Transition frequency f T = f (I C )V CE = 5V

3

BCP28中文资料

Collector-emitter saturation voltage I C = f (V CEsat ), h FE = 1000

DC current gain h FE = f (I C )V CE = 5V

BCP28中文资料

BCP28中文资料

3

Base-emitter saturation voltage I C = f (V BEsat

), h FE = 1000

Collector-base capacitance C CB = f (V CBO )Emitter-base capacitance

C EB = f (V EBO )

BCP28中文资料

BCP28中文资料

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