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ZXMP6A17KTC;中文规格书,Datasheet资料

A Product Line of

Diodes Incorporated

ZXMP6A17K

60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary

V(BR)DSS R DS(on)

I D

T A = 25°C

-60V

125mΩ @ V GS= -10V -6.6A

190mΩ @ V GS= -4.5V -5.3A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (R DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

?Backlighting

?DC-DC Converters

?Power management functions

Features and Benefits

?Low on-resistance

?Fast switching speed

?“Green” component and RoHS compliant (Note 1)

Mechanical Data

? Case:

TO252-3L

?Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0 (Note 1)

?Moisture Sensitivity: Level 1 per J-STD-020D

?Terminals Connections: See Diagram

?Terminals: Matte Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

?Weight: 0.33 grams (approximate)

Ordering Information(Note 1)

Product Marking Reel size (inches) Tape width (mm)

Quantity per reel ZXMP6A17KTC See

Below 13 16 2,500

Note: 1. Diodes, Inc. defines “Green” products as those which are Eu RoHS compliant and contain no halogens or antimony compounds; further information about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.

Marking Information

Top View Pin Out -Top View Equivalent Circuit

G S

ZXMP = Product Type Marking Code, Line 1

6A17 = Product Type Marking Code, Line 2

YYWW = Date Code Marking

YY = Year (ex: 09 = 2009)

WW = Week (01-52)

YYWW

6A17

ZXMP

Please click here to visit our online spice models database.

Maximum Ratings@T A = 25°C unless otherwise specified

Characteristic Symbol

Value

Unit Drain-Source voltage V DSS-60 V

Gate-Source voltage V GS±20 V

Continuous Drain current V GS = 10V (Note 3)

I D

6.6

A T A=70°C (Note 3) 5.3

(Note 2) 4.4

Pulsed Drain current V GS= 10V (Note 4) I DM20.3 A Continuous Source current (Body diode) (Note 3) I S9.3 A Pulsed Source current (Body diode) (Note 4) I SM20.3 A

Thermal Characteristics@T A = 25°C unless otherwise specified

Characteristic Symbol

Value

Unit

Power dissipation Linear derating factor (Note 2)

P D

4.17

33.3

mW/°C (Note 3)

9.25

74.0

(Note 5)

2.11

16.8

Thermal Resistance, Junction to Ambient (Note 2)

RθJA

30.0

°C/W (Note 3) 13.5

(Note 5) 59.1

Thermal Resistance, Junction to Lead (Note 6) RθJL 2.41

Operating and storage temperature range T J, T STG-55 to 150 °C

Notes: 2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition.

3. Same as note 2, except the device is measured at t ≤ 10 sec.

4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.

5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

6. Thermal resistance from junction to solder-point (at the end of the drain lead).

Thermal Characteristics

0.00.51.01.52.02.53.03.54.04.5

Derating Curve

Temperature (°C)

M a x P o w e r D i s s i p a t i o n (W )

05101520253035

Transient Thermal Impedance

T h e r m a l R e s i s t a n c e (°C /W )

Pulse Width (s)

Pulse Power Dissipation

Pulse Width (s) M a x P o w e r D i s s i p a t i o n (W )

Transient Thermal Impedance

Pulse Width (s) T h e r m a l R e s i s t a n c e (°C /W )

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS -60 ? ? V I D = -250μA, V GS = 0V Zero Gate Voltage Drain Current I DSS ? ? -0.5 μA V DS = -60V, V GS = 0V Gate-Source Leakage I GSS ? ? ±100 nA V GS = ±20V, V DS = 0V ON CHARACTERISTICS Gate Threshold Voltage

V GS(th) -1.0 ? ? V I D = -250μA, V DS = V GS Static Drain-Source On-Resistance (Note 7) R DS (ON) ? ? 0.125 ? V GS = -10V, I D = -2.3A 0.190 V GS = -4.5V, I D = -1.9A Forward Transconductance (Notes 7 & 8) g fs ? 4.7 ? S V DS = -15V, I D = -2.2A

Diode Forward Voltage (Note 7) V SD ? -0.85 -0.95 V I S = -2A, V GS = 0V

Reverse recovery time (Note 8) t rr 25.1 ? ns I S = -1.7A, di/dt= 100A/μs

Reverse recovery charge (Note 8) Q rr ? 27.2 ? nC DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C iss ? 637 ? pF V DS = -30V, V GS = 0V

f= 1MHz Output Capacitance

C oss ? 70 ? pF Reverse Transfer Capacitance C rss ? 53 ? pF Total Gate Charge Q g ? 9.0 ? nC V GS = -4.5V V DS = -30V I

D = -2.2A

Total Gate Charge Q g ? 17.7 ? nC V GS = -10V

Gate-Source Charge Q gs ? 1.6 ? nC Gate-Drain Charge

Q gd ? 4.4 ? nC Turn-On Delay Time (Note 9) t D(on) ? 2.6 ? ns V DD = -30V, V GS = -10V I D = -1A, R G ? 6.0Ω

Turn-On Rise Time (Note 9) t r ? 3.4 ? ns Turn-Off Delay Time (Note 9) t D(off) ? 26.2 ? ns Turn-Off Fall Time (Note 9)

t f

11.3

Notes:

7. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 8. For design aid only, not subject to production testing.

9. Switching characteristics are independent of operating junction temperatures.

Typical Characteristics

Output Characteristics

-I D D r a i n C u r r e n t (A )

-V DS Drain-Source Voltage (V)

Output Characteristics

-I D D r a i n C u r r e n t (A )

-V DS Drain-Source Voltage (V)

Normalised Curves v Temperature

N o r m a l i s e d R D S (o n ) a n d V G S (t h )

Tj Junction Temperature (°C)

On-Resistance v Drain Current

R D S (o n -I D Drain Current (A)

-I S D R e v e r s e D r a i n C u r r e n t (A )

Typical Characteristics - continued

-V

- Drain - Source Voltage (V)

Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage

Q - Charge (nC)

(

)

Test Circuits

Current

Gate charge test circuit

Switching time test circuit Basic gate charge waveform

Switching time waveforms

V DS

V GS

Package Outline Dimensions

DIM Inches Millimeters DIM Inches Millimeters Min Max Min Max Min Max Min Max

A 0.086 0.094 2.18 2.39 e 0.090 BSC 2.29 BSC

A1 - 0.005 - 0.127 H 0.370 0.410 9.40 10.41

b 0.020 0.035 0.508 0.89 L 0.055 0.070 1.40 1.78

b2 0.030 0.045 0.762 1.14 L1 0.108 REF 2.74 REF

b3 0.205 0.215 5.21 5.46 L2 0.020 BSC 0.508 BSC

c 0.018 0.024 0.457 0.61 L3 0.035 0.065 0.89 1.65

c2 0.018 0.023 0.457 0.584 L4 0.025 0.040 0.635 1.016

D 0.213 0.245 5.41 6.22 L5 0.045 0.060 1.14 1.52

D1 0.205 - 5.21 - θ1° 0° 10° 0° 10°

E 0.250 0.265 6.35 6.73 θ° 0° 15° 0° 15°

- 4.32 - - - - - - E1 0.170

Suggested Pad Layout

6.20.244mm inches

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ZXMP6A17KTC