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HSCH-9101中文资料

GaAs Beam Lead Schottky Barrier Diodes

Technical Data

Features

? Gold Tri-Metal System

For Improved Reliability

? Low Capacitance

? Low Series Resistance

? High Cutoff Frequency

? Polyimide Passivation

? Multiple Configurations

Description

The HSCH-9101 single, the HSCH-9201 series pair, and the HSCH-9251 anti-parallel pair are advanced gallium arsenide Schottky barrier diodes. These devices are fabricated utilizing molecular beam epitaxy (MBE) manufacturing techniques and feature rugged construction and consistent electrical performance.

A polyimide coating provides scratch protection and resistance to contamination.

HSCH-9101

HSCH-9201

HSCH-9251

HSCH-9101

L = 0.1 nH

HSCH-9201

L = 0.1 nH

HSCH-9251

L = 0.1 nH DIMENSIONS IN μm (1/1000 inch)

Electrical Specifications at T A = 25°C

Part Number

HSCH-9101HSCH-9201HSCH-9251Symbol Parameters and Test Conditions Units Min.

Typ.Max.Min.

Typ.Max.

C j [1]Junction Capacitance pF 0.040

0.050

0.0400.0500.040

V R = 0 V, f = 1 MHz

?C j [1]Junction Capacitance Difference pF 0.005

0.010V R = 0 V, f = 1 MHz R S [2]Series Resistance ?666V F1Forward Voltage mV 700800700800700800I F = 1 mA V F10Forward Voltage mV 800

850

800

850800

850I F = 10 mA

?V F Forward Voltage Difference mV 15

I F = 1 mA and 10 mA V BR

Reverse Breakdown Voltage V

4.5

V R = V BR measure I R ≤ 10 μA (per junction)

Notes:

1. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic capacitance (0.035 pF).

2. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6 ?.

Applications

This line of Schottky diodes is optimized for use in mixer appli-cations at millimeter wave frequencies. Some suggested mixer types are single ended and single balanced for the single and series pair. The anti-parallel pair is ideal for harmonic mixers.

Assembly Techniques Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or

Application Note 992, “Beam Lead Attachment Methods,” or

Application Note 993, “Beam Lead Device Bonding to Soft Substrates.”

GaAs diodes are ESD sensitive.Proper precautions should be used when handling these devices.

Maximum Ratings

Power Dissipation at T LEAD = 25°C ..............................75 mW per junction Measured in an infinite heat sink derated linearly to zero at maximum rated temperature

Operating Temperature........................................................-65°C to +150°C Storage Temperature ............................................................-65°C to +150°C Mounting Temperature................................................235°C for 10 seconds Minimum Lead Strength ....................................................................6 grams

Typical Parameters

FORWARD VOLTAGE (V)

Figure 1. Typical Forward

Characteristics for HSCH-9101, HSCH-9201, and HSCH-9251.

F O R W A R D C U R R E N T (m A )

Figure 2. Typical Noise Figure and I.F. Impedance vs. Local Oscillator Power, for HSCH-9101 and HSCH-9201.

N O I S E F I G

U R E (d B )

I F I M P E D A N C E (?)

LOCAL OSCILLATOR POWER (dBm)

SPICE Parameters

Parameter Units HSCH-9XXX

B V V 5

C J0pF 0.04E G eV 1.43I BV A 10E -5I S A 1.6 x 10E -13

N 1.20R S ?5P B V

0.7P T 2M

0.5

https://www.wendangku.net/doc/444030047.html, Data subject to change.

5965-8851E (11/99)