dsei30-12a
Maximum Ratings DSEI 30
I FAVM =26 A V RRM =1200 V t rr =40 ns
x I FAVM rating includes reverse blocking losses at T VJM , V R = 0.8 V RRM , duty cycle d = 0.5Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard package JEDEC TO-247 AD q Planar passivated chips q Very short recovery time
q Extremely low switching losses q
Low I RM -values
q Soft recovery behaviour q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency switching devices q Anti saturation diode q Snubber diode
q
Free wheeling diode in converters and motor control circuits
q
Rectifiers in switch mode power supplies (SMPS)
q Inductive heating and melting
q
Uninterruptible power supplies (UPS)q
Ultrasonic cleaners and welders
Advantages
q High reliability circuit operation q
Low voltage peaks for reduced protection circuits q Low noise switching q Low losses
q
Operating at lower temperature or space saving by reduced cooling
Fast Recovery
Epitaxial Diode (FRED)
A
C
TO-247 AD
C
A A = Anode, C = Cathode
036
0.001
0.010.1
1
10
0.00.2
0.4
0.6
0.81.0s
t
Z thJC
K/W
t fr
ns 0
200400
600800
1000
1200
40
80
1201600.0
0.20.4
0.60.81.01.21.4K f
Q R
I RM
°C T J
Dimensions
https://www.wendangku.net/doc/456241416.html,limeter Inches Min.Max.Min.Max.A 19.8120.320.7800.800B 20.8021.460.8190.845C 15.7516.260.6100.640D 3.55 3.650.1400.144E 4.32 5.490.1700.216F
5.4
6.20.2120.244G 1.65
2.130.0650.084H - 4.5-0.177J 1.0 1.40.0400.055K 10.811.00.4260.433L 4.7 5.30.1850.209M
0.40.80.0160.031N
2.2
2.54
0.087
0.102
Fig. 1Forward current
Fig. 2Recovery charge versus -di F /dt.
Fig. 3Peak reverse current versus
versus voltage drop.
-di F /dt.
Fig. 4Dynamic parameters versus
Fig. 5Recovery time versus -di F /dt.
Fig. 6Peak forward voltage
junction temperature.
versus di F /dt.
Fig. 7Transient thermal impedance junction to case.