bby 51中文资料

Silicon Tuning Diode

? High Q hyperabrupt dual tuning diode

? Designed for low tuning voltage operation

? For VCO's in mobile communications equipment

12

3

VPS05161

Type Marking Pin Configuration Package

BBY 51S3 1 = A1 2 = A2 3 = C1/2SOT-23

Maximum Ratings

Parameter Symbol Value Unit Diode reverse voltage V R7V Forward current I F20mA Operating temperature range T op-55 ... 150°C Storage temperature T stg-55 (150)

Electrical Characteristics at T A = 25°C, unless otherwise specified.

Parameter Symbol Values Unit

min.typ.max.

DC characteristics

Reverse current

V R = 6 V

I R--10nA

Reverse current

V R = 6 V, T A = 150 °C

I R--200

AC characteristics

pF

C T

Diode capacitance

V R = 1 V, f = 1 MHz V R = 2 V, f = 1 MHz V R = 3 V, f = 1 MHz V R = 4 V, f = 1 MHz

6.1

5.2

4.6

3.7

5.3

4.2

3.5

3.1

4.5

3.4

2.7

2.5

-C T1/C T4

Capacitance ratio

V R = 1 V, V R = 4 V, f = 1 MHz 1.55 2.2

1.75

pF

Capacitance difference

V R = 1 V, V R = 3 V, f = 1 MHz

1.78

1.4

2.2 C1V-C3V

0.3

C3V-C4V0.5

Capacitance difference

V R = 3 V, V R = 4 V, f = 1 MHz

0.7

Series resistance V R = 1 V, f = 1 GHz r s-

0.37?

-

pF

Case capacitance f = 1 MHz C C--

0.12

Series inductance L s-nH

2-

Diode capacitance C T = f (V R)

f = 1MHz

R