BT138中文资料
UTC BT138
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R401-002,A
TRIACS LOGIC LEVEL
DESCRIPTION
Passivated triacs in a plastic envelope, intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating voltages and static switching .
SYMBOL
G
1:MT1 2:MT2 3:GATE
ABSOLUTE MAXIMUM RATINGS ( Tj=25°C)
PARAMETER SYMBOL RATING UNIT
Repetitive Peak Off State Voltage
BT138-600 BT138-800 V DRM
600
800
V RMS On-state Current (Full sine wave; Tmb ≤99°C)
I T(RMS) 12 A
Non-repetitive Peak. On-State Current (Full sine wave; Tj =25°C prior to surge) t=20ms t=16.7ms I TSM
95
105
A
I 2t For Fusing (t=10ms) I 2t 45 A 2s Repetitive Rate of Rise of On-state Current after Triggering (I TM =20A;I G =0.2A; dI G /dt=0.2A/μs) T2+G+
T2+G-
T2-G-
T2-G+
dI T /dt
50 50 50 10 A/μs
Peak Gate Voltage V GM 5 V Peak Gate Current I GM 2 A Peak Gate Power P GM 5 W Average Gate Power P G(AV) 0.5 W Operating Junction Temperature Tj 125 °C Storage Temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15A/μs.
UTC BT138
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R401-002,A
THERMAL RESISTANCES
PARAMETER SYMBOL MIN TYP MAX UNIT
Thermal Resistance, Junction to Mounting Base
Full cycle Half cycle
R θj-mb
1.5
2.0
°C /W
Thermal Resistance, Junciton to Ambient In free air
R θj-a
60 - °C /W
STATIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate Trigger Current
T2+G+ T2+G- T2-G- T2-G+ I GT V D =12V, I T =0.1A
5 8 10 12 35 35 35 70 mA Latching Current
T2+G+ T2+G- T2-G- T2-G+ I L V D =12V, I GT =0.1A
7 20 8 10 40 60 40 60
mA Holding Current I H V D =12V, I GT =
0.1A 6 30 mA On-State Voltage V T
I T =15A 1.4 1.65 V Gate Trigger Voltage
V GT V D =12V, I T =0.1A
V D =400V, I T =0.1A, Tj=125°C 0.25
0.7 0.4
1.5
V
Off-state Leakage Current I D
V D =V DRM(max) , Tj=125°C
0.1 0.5 mA
DYNAMIC CHARACTERISTICS (Tj=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Critical Rate Of Rise Of Off-State
Voltage dV D /dt V DM =67% V DRM(max), Tj=125°C Exponential waveform, Gate open circuit
100 250 V/μs
Critical Rate Of Change Of Commutating Voltage dV com /dt V DM =400V,Tj=95°C, I T(RMS)=12A dl com /dt =5.4A/ms, Gate open circuit
20 V/μs
Gate Controlled Turn-on Time
tgt
I TM =16A, V D =V DRM(max), I G =0.1A dI G /dt=5A/μs
2 μs
UTC BT138
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R401-002,A
TYPICAL CHARACTERISTICS
5
Figure 1.Maximum on -state Dissipation.Ptot vs RMS On-state Current,I T(RMS),W here α=conduction Angle.Figure 4.Maximum Permissible RMS Current I T(RMS)
vs mounting baseTemperature T m b Number of Cycles at 50Hz
Tj/℃
UTC BT138
TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD.
4
QW-R401-002,A
Figure 10.Typical and Maximum
On-state Characteristic
1
20Figure 7.Normalised Gate Trigger Current I GT (Tj)/I GT (25℃),vs Junction Temperature Tj
I GT (Tj )0Tj/℃
Tj/℃
UTC BT138 TRIAC
UTC UNISONIC TECHNOLOGIES CO., LTD. 5
QW-R401-002,A