V2O5／V／V2O5复合膜的制备及其光电性能研究

V2O5／V／V2O5复合膜的制备及其光电性能研究

颜毓雷;李合琴;乔恺;张学科;周矗;陶磊

【期刊名称】《合肥工业大学学报（自然科学版）》

【年(卷),期】2014(000)006

【摘要】V2 O5/V/V2 O5 trilayer thin film with different deposition time of V layer was prepared on glass substrates by DC magnetron sputtering at room temperature . T hen all of the as-deposited V2 O5/V/V2 O5 trilayer thin film were annealed at 450 ℃ for 60 min under air atmosphere .The photo-electric performance of the V2 O5/V/V2 O5 trilayer thin film was studied by four-point probe measure-ment .The structure of the V2 O5/V/V2 O5 three-layer thin film was analyzed by X-ray diffraction (XRD) .The results show that the annealed V2 O5/V/V2 O5 trilayer thin film with 25 min of V layer deposition possesses a square resistance of 38 .5 kΩ ,a temperature coefficient of resist ance (TCR) of-0 .021 8 K -1 and an infrared absorption of above 0 .6 at the band between 700 nm and 1 400 nm ,so it is suitable for the application of uncooled micro-bolometer .%文章采用直流磁控溅射法在玻璃衬底上制备了V2 O5/V/V2 O5复合膜，通过改变中间层钒的溅射时间，制备了3组薄膜。所有薄膜均在450℃空气气氛中退火60 min。用四探针测试仪测试了薄膜的电学性能，用X射线衍射仪对薄膜的结构组分进行分析。实验结果表明，当V层溅射时间为25 min时，经450℃退火后的薄膜方块电阻为38．5 kΩ，电阻温度系数为-0．0218 K -1，在700～1400 nm波段红外吸光度均在0．6以上，