BT137-600D,127;中文规格书,Datasheet资料

1.Product profile

1.1General description

Planar passivated very sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

1.2Features and benefits

Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation

Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants Very sensitive gate

1.3Applications

General purpose motor control

General purpose switching

1.4Quick reference data

BT137-600D

4Q Triac

Rev. 3 — 24 March 2011

Product data sheet

Table 1.Quick reference data Symbol Parameter Conditions

Min Typ Max Unit V DRM repetitive peak off-state voltage --600V I TSM

non-repetitive peak on-state current full sine wave; T j(init)=25°C; t p =20ms; see Figure 4;see Figure 5

--65

A

I T(RMS)

RMS on-state current

full sine wave; T mb ≤102°C; see Figure 1; see Figure 2;see Figure 3--8A

2.Pinning information

3.Ordering information

Static characteristics

I GT

gate trigger current

V D =12V;I T =0.1A; T2+ G+; T j =25°C; see Figure 7- 2.55mA V D =12V;I T =0.1A; T2+ G-; T j =25°C; see Figure 7- 3.55mA V D =12V;I T =0.1A; T2- G-; T j =25°C; see Figure 7- 3.55mA V D =12V;I T =0.1A; T2- G+; T j =25°C; see Figure 7

- 6.510mA I H

holding current

V D =12V;T j =25°C;see Figure 9

- 1.5

10

mA

Table 1.Quick reference data …continued Symbol Parameter Conditions

Min Typ Max Unit Table 2.Pinning information Pin Symbol Description Simplified outline Graphic symbol

1T1main terminal 1SOT78 (TO-220AB)

2T2main terminal 23G gate

mb

T2

mounting base;main terminal 2

12mb

3

sym051

T1G

T2

Table 3.

Ordering information

Type number

Package Name

Description

Version BT137-600D

TO-220AB

plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

SOT78

4.Limiting values

Table 4.Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min Max Unit V DRM repetitive peak off-state voltage -600V I T(RMS)RMS on-state current full sine wave; T mb ≤102°C;

see Figure 1; see Figure 2; see Figure 3-8A I TSM

non-repetitive peak on-state current

full sine wave; T j(init)=25°C;

t p =20ms; see Figure 4; see Figure 5-65A full sine wave; T j(init)=25°C; t p =16.7ms

-71A I 2t I 2t for fusing t p =10ms; sine-wave pulse

-21A 2s dI T /dt

rate of rise of on-state current

I T =12A; I G =0.2A; dI G /dt =0.2A/μs; T2+ G+

-50A/μs I T =12A; I G =0.2A; dI G /dt =0.2A/μs; T2+ G--50A/μs I T =12A; I G =0.2A; dI G /dt =0.2A/μs; T2- G--50A/μs I T =12A; I G =0.2A; dI G /dt =0.2A/μs; T2- G+

-10A/μs I GM peak gate current -2A V GM peak gate voltage -5V P GM peak gate power -5W P G(AV)average gate power over any 20 ms period

-0.5W T stg storage temperature -40150°C T j

junction temperature

-125

°C

5.Thermal characteristics

Table 5.Thermal characteristics

Symbol Parameter

Conditions

Min Typ Max Unit R th(j-mb)thermal resistance from junction to mounting base half cycle; see Figure 6-- 2.4K/W full cycle; see Figure 6--2K/W R th(j-a)

thermal resistance from junction to ambient

in free air

-

60

-

K/W

6.Characteristics

Table 6.Characteristics

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

I GT gate trigger current V D=12V;I T=0.1A; T2+ G+;

T j=25°C;see Figure 7

- 2.55mA

V D=12V;I T=0.1A; T2+ G-;

T j=25°C;see Figure 7

- 3.55mA

V D=12V;I T=0.1A; T2- G-;

T j=25°C;see Figure 7

- 3.55mA

V D=12V;I T=0.1A; T2- G+;

T j=25°C;see Figure 7

- 6.510mA

I L latching current V D=12V;I G=0.1A; T2+ G+;

T j=25°C;see Figure 8

- 1.615mA

V D=12V;I G=0.1A; T2+ G-;

T j=25°C;see Figure 8

-8.520mA

V D=12V;I G=0.1A; T2- G-;

T j=25°C;see Figure 8

- 1.215mA

V D=12V;I G=0.1A; T2- G+;

T j=25°C;see Figure 8

- 2.520mA I H holding current V D=12V;T j=25°C;see Figure 9- 1.510mA V T on-state voltage I T=10A; T j=25°C; see Figure 10- 1.3 1.65V

V GT gate trigger voltage V D=12V;I T=0.1A; T j=25°C;

see Figure 11

-0.7 1.5V

V D=400V; I T=0.1A; T j=125°C;

see Figure 11

0.250.4-V

I D off-state current V D=600V; T j=125°C-0.10.5mA Dynamic characteristics

dV D/dt rate of rise of off-state

voltage V DM=402V;T j=125°C;R GT1=1k?;

exponential waveform; gate open circuit

-5-V/μs

t gt gate-controlled turn-on

time I TM=12A; V D=600V; I G=0.1mA;

dI G/dt=5A/μs

-2-μs

7.Package outline

Fig 12.Package outline SOT78 (TO-220AB)

8.Revision history

Table 7.Revision history

Document ID Release date Data sheet status Change notice Supersedes

BT137-600D v.320110324Product data sheet-BT137-600D_2 Modifications:?Various changes to content.

?The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.

?Legal texts have been adapted to the new company name where appropriate.

BT137-600D_220010601Product specification-BT137_SERIES_D_1

分销商库存信息: NXP

BT137-600D,127