IPB50CN10NG中文资料
Opti MOS?
IPP50CN10N G IPU49CN10N G PG-TO263-3PG-TO252-3PG-TO262-3PG-TO220-3PG-TO251-3
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Thermal characteristics
Thermal resistance, junction - case R thJC -- 3.4K/W
R thJA
minimal footprint --626 cm2 cooling area 4)--40minimal footprint --756 cm2 cooling area 4)
--50
Electrical characteristics, at T j =25 °C, unless otherwise specified Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS =0 V, I D =1 mA 100--V
Gate threshold voltage V GS(th)V DS =V GS , I D =20 μA 234Zero gate voltage drain current
I DSS
V DS =80 V, V GS =0 V, T j =25 °C
-0.1
1
μA V DS =80 V, V GS =0 V, T j =125 °C
-10100Gate-source leakage current I GSS V GS =20 V, V DS =0 V -1100nA Drain-source on-state resistance
R DS(on)
V GS =10 V, I D =20 A, (TO252)
-
37
49
m ?
V GS =10 V, I D =20 A, (TO251)
-3749
V GS =10 V, I D =20 A, (TO263)
-3850
V GS =10 V, I D =20 A, (TO220, TO262)
-3850Gate resistance R G -1-?Transconductance
g fs
|V DS |>2|I D |R DS(on)max , I D =20 A
11
21
-S
Values 4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 μm thick) copper area for drain connection. PCB is vertical in still air.
Thermal resistance, junction - ambient (TO220, TO262, TO263)Thermal resistance, junction - ambient (TO252, TO251)
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics Input capacitance C iss -8221090pF
Output capacitance
C oss -120160Reverse transfer capacitance C rss -1015Turn-on delay time t d(on)-1015ns
Rise time
t r -46Turn-off delay time t d(off)-1420Fall time
t f
-
3
4
Gate Charge Characteristics 5)Gate to source charge Q gs -56nC
Gate to drain charge Q gd -34Switching charge Q sw -57Gate charge total Q g -1216Gate plateau voltage V plateau - 5.7-V Output charge Q oss
V DD =50 V, V GS =0 V -
12
17
nC
Reverse Diode
Diode continous forward current I S --20A
Diode pulse current I S,pulse --80Diode forward voltage V SD V GS =0 V, I F =20 A, T j =25 °C -1 1.2
V Reverse recovery time t rr -100ns
Reverse recovery charge
Q rr
-
140
-nC
5)
See figure 16 for gate charge parameter definition
V R =50 V, I F =I S , d i F /d t =100 A/μs
T C =25 °C
Values V GS =0 V, V DS =50 V, f =1 MHz
V DD =50 V, V GS =10 V, I D =20 A, R G =1.6 ?V DD =50 V, I D =20 A, V GS =0 to 10 V
1 Power dissipation
5 Typ. output characteristics
9 Drain-source on-state resistance
13 Avalanche characteristics
PG-TO220-3: Outline
PG-TO-263 (D2-Pak)
PG-TO252-3: Outline
PG-TO251-3: Outline
Published by
Infineon Technologies AG
81726 München, Germany
? Infineon Technologies AG 2006.
All Rights Reserved.
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non-infringement of intellectual property rights of any third party.
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