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4580M-E1中文资料

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45801

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

General Description

The AZ4580 is a monolithic dual low noise operational amplifier. It is specifically designed for audio systems to improve tone control; it can also be used in pre-amplifier, industrial measurement tools and applica-tions where gain and phase matched channels are man-datory.

The IC features internal frequency compensation, low noise, low distortion, high gain and high bandwidth.The AZ4580 can operate under dual power supply voltage up to ±18V or single power supply up to 36V . The AZ4580 is available in DIP-8, SOIC-8, SIP-8 and TSSOP-8 packages.

Features

·Large Signal V oltage Gain: 110dB Typical

·Low Input Noise V oltage: 0.7 μV RMS (RIAA)Typical

·Wide Gain Bandwidth Product: 15 MHz at 10KHz Typical

·Low Distortion: 0.0005% Typical ·

Slew Rate: 7V/μs Typical

Applications

·Audio AC-3 Decoder System ·

Audio Amplifier

Figure 1. Package Types of AZ4580

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ4580

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Pin Configuration

Figure 2. Pin Configuration of AZ4580 (Top View)

(DIP-8/SOIC-8/TSSOP-8)

(SIP-8)

Pin Description

Pin No.

Function

Pin No.

Function

Pin No.

Function

Pin No.

Function

1OUTPUT 12INPUT 1-3INPUT 1+4V EE 5

INPUT 2+

INPUT 2-

OUTPUT 2

V CC

P/M/G Package Q Package V CC OUTPUT 2INPUT 2-INPUT 2+

V EE

OUTPUT 1V EE OUTPUT 1

INPUT 1-INPUT 1+V CC OUTPUT 2INPUT 2-INPUT 2+

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45803

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Figure 3. Representative Schematic Diagram of AZ4580 (Each Amplifier)

Functional Block Diagram

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45804

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Package Temperature Range Part Number

Marking ID

Packing Type

Tin Lead Lead Free Tin Lead

Lead Free SOIC-8-40 to 85o C AZ4580M AZ4580M-E14580M 4580M-E1Tube AZ4580MTR AZ4580MTR-E14580M 4580M-E1Tape & Reel

DIP-8-40 to 85o C AZ4580P AZ4580P-E1AZ4580P AZ4580P-E1Tube SIP-8-40 to 85o C AZ4580Q AZ4580Q-E1AZ4580Q AZ4580Q-E1Tube TSSOP-8

-40 to 85o C

AZ4580G AZ4580G-E1G80EG80Tube AZ4580GTR

AZ4580GTR-E1

G80

EG80

Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Circuit Type Package

M: SOIC-8E1: Lead Free

Blank: Tin Lead AZ4580 -

TR: Tape and Reel

Blank: Tube

P: DIP-8Q: SIP-8G: TSSOP-8

Ordering Information

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45805

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Parameter Smbol Value

Unit Power Supply V oltage V CC + 20 V V EE

- 20

Input V oltage

V I ±15V Differential Input V oltage V ID ±30V

Operating Junction Temperature T J 150o C Storage Temperature Range T STG -65 to 150o C Lead Temperature (Soldering 10s)

T L

260

Power Dissipation (T A =25o C)

P D

TSSOP-8

400mW

SOIC-8500SIP-8750DIP-8

800

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indi-cated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.

Recommended Operating Conditions

Parameter Min Max Unit Supply V oltage

± 2± 18V

Operating Temperature Range

-40

o C

Absolute Maximum Ratings (Note 1)

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45806

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Operating Conditions: V CC =+15V , V EE =- 15V , T A =25o C unless otherwise specified. Parameter Conditions

Min Typ Max Unit Supply Current no load 47mA Input Offset V oltage R S ≤10K ? 0.53mV Input Offset Current V CM =0V 5100nA Input Bias Current

V CM =0V

150

500nA Input Common Mode V oltage Range ±12

±13.5

V Common Mode Rejection Ratio V CM =0V to V CC -1.5V , R S ≤10K ?80110 dB Large Signal V oltage Gain R L =2K ?, V O =±10V 90110 dB Power Supply Rejection Ratio R S ≤10K ?

110

Output Sink Current V-=1V , V+=0V , V O =2V 80mA Output Source Current V+=1V , V-=0V , V O =2V 45mA

Slew Rate

R L ≥2K ?

V/μS Gain Bandwidth Product R L =2K ?, f=10KHz 15 MHz Total Harmonic Distortion A V =20dB, V O =5V R L =2K ?, f=1KHz 0.0005

%Equivalent Input Noise V oltage

RIAA R S =50?, 30KHz LPF

0.7

μV RMS

Electrical Characteristics

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45807

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Typical Performance Characteristics

Figure 4. Open Loop Voltage Gain vs. Frequency Figure 5. Maximum Output Voltage Swing vs. Frequency

Figure 6. Maximum Output Voltage Swing

Figure 7. Equivalent Input Noise Voltage Density

vs. Load Resistance vs. Frequency

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45808

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Typical Applications

Figure 10. Application of AZ4580 in an AC/DC Converter

Typical Performance Characteristics (Continued)

Figure 8. Input Offset Voltage vs.Temperature

Figure 9. Input Bias Current vs.Temperature

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ45809

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Typical Applications (Continued)

Figure12. Application of AZ4580 in Tone Control

Figure11. Application of AZ4580 in a RIAA Preamp

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ458010

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Mechanical Dimensions

DIP-8

Unit: mm(inch)

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ458011

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Mechanical Dimensions (Continued)

SOIC-8

Unit: mm(inch)

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ458012

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Mechanical Dimensions (Continued)

Unit: mm(inch)

SIP-8

DUAL LOW NOISE OPERATIONAL AMPLIFIERS

AZ458013

Jul. 2006 Rev. 1. 6

BCD Semiconductor Manufacturing Limited

Mechanical Dimensions (Continued)

TSSOP-8

Unit: mm(inch)

IMPORTANT NOTICE

BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or other rights nor the rights of others.

- Wafer Fab

Shanghai SIM-BCD Semiconductor Manufacturing Limited 800, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6485 1491, Fax: +86-21-5450 0008

BCD Semiconductor Manufacturing Limited

MAIN SITE

REGIONAL SALES OFFICE

Shenzhen Office

Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen 518031, China Tel: +86-755-8368 3987, Fax: +86-755-8368 3166

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Tel: +886-2-2656 2808, Fax: +886-2-2656 2806

USA Office

BCD Semiconductor Corporation

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Tel: +1-408-988 6388, Fax: +1-408-988 6386

- IC Design Group

Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China Tel: +86-21-6495 9539, Fax: +86-21-6485 9673

BCD Semiconductor Manufacturing Limited

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