RDA5876p_datasheet_v1.11

RDA5876P
SINGLE CHIP FOR BLUETOOTH & FM RADIO TUNER
Rev.1.11–08.2012
GPIO2/ WLAN_ACTIVE
HOST_WAKE
FM_OUTR
1 General Description
RDA5876P integrates industry-lead Bluetooth and FM radio tuner into one chip and is optimized for mobile applications. Bluetooth and FM can work simultaneously and independently, with low power consumption levels target to battery powered devices. For the highest integration level, the required board space has been minimized and customer cost has been reduced. Manufacturers can easily and fast integrate RDA5876P on their product to enable a rapid time to market. RDA5876P uses CMOS process with a compact 4*4mm 32-pin QFN package.
UART_RX 1 PCM_DOUT 2 PCM_DIN 3 PCM_CLK 4 PCM_SYNC 5 VIO 6 VOUT18 7 NC
8
UART_TX
FM_OUTL
VOUT12
NC
26
32
31
30
29
28
27
NC
25
24 23
NC FM_IP FM_IN AGPIO1/BT_PRIORITY AGPIO0/BT_ACTIVE RF NC NC
GND PAD RDA5876P 32 Pins
22 21 20 19 18 17
9
10
11
12
13
14
15
16
XIN_32K
I2C_SDA
XEN_OUT
Figure1-1. RDA5876P Top View
1.1 Bluetooth Features
CMOS single-chip fully-integrated radio and baseband Compliant with Bluetooth 2.1 + EDR specification Bluetooth Piconet and Scatternet support ARM7-based microprocessor with on-chip ROM and RAM Meet class 1, 2 and class 3 transmitting power requirement, support class1 operation with external power amplifier Provides +10dbm transmitting power NZIF receiver with -90dBm sensitivity Battery power supply directly with internal LDO Up-to 4Mbps high speed UART HCI support
Copyright ? RDA Microelectronics Inc. 2009. All rights are reserved. The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA.
Support AFH Support 3-wire WIFI Co-existence handshake signals Low power consumption Minimum external component Internal 32k LPO.
LDO_ON
I2C_SCL
VBAT
XIN
NC

RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
1.2 FM Features
CMOS single-chip fully-integrated FM tuner Low power consumption Total current consumption lower than 20mA at 3.0V power supply Support worldwide frequency band 50 -115 MHz Support flexible channel spacing mode 100KHz, 200KHz, 50KHz and 25KHz Support RDS/RBDS Digital low-IF tuner Image-reject down-converter High performance A/D converter IF selectivity performed internally Fully integrated digital frequency synthesizer Fully integrated on-chip RF and IF VCO Fully integrated on-chip loop filter Autonomous search tuning Support 32.768KHz crystal oscillator Digital auto gain control (AGC) Digital adaptive noise cancellation Mono/stereo switch Soft mute High cut
Programmable de-emphasis (50/75 μs) Receive signal strength indicator (RSSI) Bass boost Volume control Line-level analog output voltage I2C control bus interface Directly support 32? resistance loading Integrated LDO regulator 1.8 to 5.5 V operation voltage
1.3 Applications
Mobile handset MP3,MP4 and PMP PDA Cordless phone
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
2 Table of Contents
1 General Description ....................................................................................................................................1 1.1 Bluetooth Features .............................................................................................................................1 1.2 FM Features........................................................................................................................................2 1.3 Applications ........................................................................................................................................2 Table of Contents.........................................................................................................................................3 Bluetooth Section Functional Description.................................................................................................4 Bluetooth Section Features.........................................................................................................................5 Bluetooth Section Electrical Characteristics ............................................................................................6 Bluetooth Section Radio Characteristics...................................................................................................8 FM Section Functional Description .........................................................................................................10 FM Section Electrical Characteristics.....................................................................................................12 FM Section Receiver Characteristics ......................................................................................................13 Pins Description.........................................................................................................................................14 Application Circuit....................................................................................................................................17 Package Physical Dimension ....................................................................................................................17 PCB Land Pattern.....................................................................................................................................18 Change List................................................................................................................................................21 Contact Information .................................................................................................................................22
2 3 4 5 6 7 8 9 10 11 12 13 14 15
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
3 Bluetooth Section Functional Description
VBAT
DC/DC
BB
Modem
A A
Φ BT_RF PLL
x x
RF
LDO
ROM
ROM
D
Envelon
FM_IP LDO_ON
POR
RAM
RAM
FM_IN GPIO_FM1
AHB ARM TRAP SPI2 FM
GPIO_FM2 GPIO_FM3 FM_OUTR
VIC
I2C_SDA I2C_SCL
SCU
FM_OUTL
I2C DMA TIMER PLL
XIN
UART_TX UART_RX
UART
APB BRIDGE
APB GPIO 32K/LPO
XIN_32K
Figure3-1. RDA5876P Bluetooth Block Diagram RDA5876P is designed for use in UART HCI with handset chipsets. As shown in Figure3-1, RDA5876P integrates radio unit, baseband core, ARM7 core and memory which provides a complete lower Bluetooth protocol stack including the LC, LM and HCI interface.
The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 4 of 22

RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
4 Bluetooth Section Features
Radio
? ? ? ? ? ? ? Build-in TX/RX switch Fully integrated synthesizer without any external component Support external reference clock direct input Class1, 2 and class3 transmit output power supported and over 30dB dynamic control range Supports π/4 DQPSK and 8DPSK modulation High performance in receiver sensitivity and over 80dB dynamic range Integrated channel filter
Auxiliary features
? ? ? ? ? On-chip regulator to support battery power supply directly Power management support low power mode Support share handset system reference clock Support 3-wire wifi cooperation handshake protocol Support external class1 PA and antenna switch
Baseband
? ? ? ? ? Internal RAM allows fully speed data transfer, mixed voice and data, and fully piconet operation Logic for forward error correction, header error control, access code correlation, CRC, demodulation , encryption bit stream generation, whitening and transmit pulse shaping Support eSCO and AFH Support up to Bluetooth v2.1 + EDR Support A-law, μ-law and CVSD digitize audio CODEC in PCM interface
Interface
? ? ? ? Provides UART HCI interface, up-to 4Mbps Provides I2C interface for host to do configuration Provides PCM audio interface Provides 3-wire and 2-wire WIFI Co-existence handshake interface
Bluetooth Stack
? Compliant with Bluetooth 2.1 + EDR specification
The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 5 of 22

RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
5 Bluetooth Section Electrical Characteristics
Table 5-1
SYMBOL
DC Electrical Specification (Recommended Operation Conditions):
DESCRIPTION Supply Voltage from battery or LDO Ambient Temperature CMOS Low Level Input Voltage CMOS High Level Input Voltage CMOS Threshold Voltage MIN 3.3 -20 0 0.7*VIO 0.5*VIO TYP 4.0 27 MAX 4.2 +50 0.3*VIO VIO UNIT V ℃ V V V
VBAT Tamb VIL VIH VTH
Notes:
1. VIO=1.8~3.3V
Table 5-2
SYMBOL
DC Electrical Specification (Absolute Maximum Ratings):
DESCRIPTION Ambient Temperature Input Current Input Voltage LNA Input Level MIN -20 -10 -0.3 TYP MAX +60 +10 VIO+0.3 +5 UNIT °C mA V dBm
Tamb IIN VIN Vlna
Table 5-3
LDO
Power consumption specification
(VBAT = 4.0 V, VIO = 2.8V, TA = +27℃, RF 9dBm, LDO mode unless otherwise specified) STATE Headset voice Headset SNIFF HCI only active Both SCAN DeepSleep internal LDO off 1.28S cycle 26Mhz crystal off LDO_ON off INQUIRE and PAGE SCAN DESCRIPTION HV3 type 500ms cycle NO INQUIRE and PAGE SCAN Condition TYP 18 0.5 5.7 1.0 118 7 UNIT mA mA mA mA μA μA
Ivbat=105uA,Ivio=13uA,External 32K input Ivbat=6uA,Ivio=1uA
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
6 Bluetooth Section Radio Characteristics
Table 6-1 Receiver Characteristics ------ Basic Data Rate
(VBAT = 4.0 V, TA = 27°C, unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN / 0 / F=F0 + 1MHz F=F0 - 1MHz Adjacent channel selectivity C/I F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3 MHz F=F0 - 3MHz Adjacent channel selectivity C/I F=Fimage 30MHz–2000MHz Out-of-band blocking performance 2000MHz–2400MHz 2500MHz–3000MHz 3000MHz–12.5GHz Intermodulation Spurious output level / / / / / / / -10 -27 -27 -10 -35 -150 TYP -90 / +10 / / / / / / / / / / / / / MAX / / / -5 0 -33 -30 -45 -40 0 / / / / / / UNIT dBm dBm dB dB dB dB dB dB dB dB dBm dBm dBm dBm dBm dBm/Hz
General specifications
Sensitivity @0.1% BER Maximum received signal@0.1% BER C/I c-channel
Notes:
Table 6-2
Transmit Characteristics ------ Basic Data Rate
(VBAT = 4.0V, TA = 27 °C, unless otherwise specified) SYMBOL General specifications PARAMETER CONDITIONS MIN / 20 / F=F0 + 1MHz F=F0 - 1MHz F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz F=F0 + >3MHz / / / / / / / TYP +4 / 0.9 -20 -20 -35 -35 -40 -40 / MAX +10 / / / / / / / / -46 UNIT dBm dB MHz dBm dBm dBm dBm dBm dBm dBm
Maximum RF transmit power RF power control range 20dB band width
Adjacent channel transmit power
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RDA Microelectronics, Inc.
F=F0 - >3MHz △f1avg Maximum modulation △f2max Minimum modulation △f2avg/△f1avg ICFT Drift rate Drift (1 slot packet) Drift (5 slot packet) -46 / / 0.80 / / / /
RDA5876P Datasheet V1.11 / 164 145 / +4 0.1 -2 -2 / / / / / / / / dBm kHz kHz / kHz
kHz/50us
kHz kHz
Notes:
Table 6-3
Receiver Characteristics ------ Enhanced Data Rate
(VBAT = 4.0 V, TA = 27°C, unless otherwise specified) PARAMETER CONDITIONS MIN / 0 / F=F0 + 1MHz F=F0 - 1MHz Adjacent channel selectivity C/I F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz Adjacent channel selectivity C/I F=Fimage / / / / / / / TYP -86 / / / / / / / / / MAX / / +13 +5 0 -20 -20 -40 -40 -7 UNIT dBm dBm dB dB dB dB dB dB dB dB
π/4 DQPSK Sensitivity @0.01% BER Maximum received signal@0.1% BER C/I c-channel
8DPSK
Sensitivity @0.01% BER Maximum received signal@0.1% BER C/I c-channel
F=F0 + 1MHz F=F0 - 1MHz Adjacent channel selectivity C/I F=F0 + 2MHz F=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz Adjacent channel selectivity C/I F=Fimage
/ 0 / / / / / / / /
-83 / / / / / / / / /
/ / +18 +5 +5 -20 -20 -35 -35 0
dBm dBm dB dB dB dB dB dB dB dB
Notes:
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
Table 6-4
Transmit Characteristics ------ Enhanced Data Rate
(VBAT = 4.0 V, TA = 27°C, unless otherwise specified) PARAMETER General specifications CONDITIONS MIN / / / / / / / / RMS DEVM / / / / / / / / / / / / / / 99% DEVM Peak DEVM RMS DEVM TYP +2 -1.6 +7.4 +6.7 +2.4 +7.1 +4.4 +2.7 4.7 / 8.8 4.6 / 11.3 -14.7 -15.2 -51.0 -51.2 -30 -30 / 100 MAX / / / / / / / / / 30 / / 20 / / / / / / / -32 / UNIT dBm dB kHz kHz kHz kHz kHz kHz kHz % % % % % % dBm dBm dBm dBm dBm dBm dBm %
Maximum RF transmit power
Relative transmit control
π/4 DQPSK max w0 π/4 DQPSK max wi π/4 DQPSK max |wi + w0| 8DPSK max w0 8DPSK max wi 8DPSK max |wi + w0| π/4 DQPSK Modulation Accuracy
8DPSK Modulation Accuracy
99% DEVM Peak DEVM F=F0 + 1MHz F=F0 - 1MHz F=F0 + 2MHz
In-band spurious emissions
F=F0 - 2MHz F=F0 + 3MHz F=F0 - 3MHz F=F0 +/- > 3MHz
EDR Differential Phase Coding
Notes:
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
7 FM Section Functional Description
LOUT
I PGA
LNAP LNAN LNA +
I ADC
Audio DSP Core
digital filter MPX decoder stereo/mono audio
L DAC
Limiter
Q PGA
Q ADC
R DAC
ROUT
32.768 KHz
VCO Synthesizer
RDS /RBDS RSSI
GPIO
GPIO
RCLK 2.7-5.5 V VDD
SCLK
MCU LDO
Interface Bus SDIO VIO
FM Receiver
Figure 7-1. RDA5876P FM Tuner Block Diagram The PGA amplifies the mixer output IF signal and then digitized with ADCs. The DSP core finishes the channel selection, FM demodulation, stereo MPX decoder and output audio signal. The MPX decoder can autonomous switch from stereo to mono to limit the output noise. The DACs convert digital audio signal to analog and change the volume at same time. The DACs has low-pass feature and -3dB frequency is about 30 KHz. Synthesizer The frequency synthesizer generates the local oscillator signal which divide to quadrature, then be used to downconvert the RF input to a constant low intermediate frequency (IF). The synthesizer reference clock is 32.768 KHz. The synthesizer frequency is defined by bits CHAN[9:0] with the range from 50MHz to 115MHz.
The receiver uses a digital low-IF architecture that avoids the difficulties associated with direct conversion while delivering lower solution cost and reduces complexity, and integrates a low noise amplifier (LNA) supporting the FM broadcast band (50 to 115MHz), a quadrature image-reject mixer, a programmable gain control (PGA), a high resolution analog-to-digital converters (ADCs), an audio DSP and a highfidelity digital-to-analog converters (DACs). The LNA has differential input ports (LNAP and LNAN) and supports any input port by set according registers bits (LNA_port_sel[1:0]). It default input common mode voltage is GND. The limiter prevents overloading and limits the amount of intermodulation products created by strong adjacent channels. The quadrature mixer down converts the LNA output differential RF signal to low-IF, it also has image-reject function.
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RDA Microelectronics, Inc. Power Supply The RDA5876P FM section integrated LDO which supplies power to the chip. The external supply voltage range is 1.8-5.5 V. RESET and Control Interface select The RDA5876P FM section is RESET itself When VIO is Power up. And also support soft reset by trigger 02H BIT1 from 0 to 1. The control interface is I2C. Control Interface The I2C interface is compliant to I2C Bus Specification 2.1. It includes two pins: SCL and SDA. A I2C interface transfer begins with START condition, a command byte and data bytes, each byte has a followed ACK (or NACK) bit, and ends with STOP condition. The command byte includes a 7-bit chip address (0010000b) and a R/W bit. The ACK (or NACK) is always sent out by receiver. When in write transfer, data bytes is written out from MCU, and when in read transfer, data bytes is read out from RDA5876P. There is no visible register address in I2C interface transfers. The I2C interface has a fixed start register address (0x02h for write transfer and 0x0Ah for read transfer), and an internal incremental address counter. If register address meets the end of register file, 0x3Ah, register address will wrap back to 0x00h. For write transfer, MCU programs registers from register 0x02h high byte, then register 0x02h low byte, then register 0x03h high byte, till the last register. RDA5876P always gives out ACK after every byte, and MCU gives out STOP condition when register programming is finished. For read transfer, after command byte from MCU, RDA5876P sends out register 0x0Ah high byte, then register 0x0Ah low byte, then register 0x0Bh high byte, till receives NACK from MCU. MCU gives out ACK for data bytes besides last data byte. MCU gives out NACK for last data byte, and then RDA5876P will return the bus to MCU, and MCU will give out STOP condition. Details please refer to RDA5876P Programming Guide and RDA5802N Programming Guide and Datasheet.
RDA5876P Datasheet V1.11
The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 11 of 22

RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
8 FM Section Electrical Characteristics
Table 8-1 DC Electrical Specification (Recommended Operation Conditions): SYMBOL VBAT VIO Tamb VIL VIH VTH
Notes: 1. VIO=1.8~3.3V
DESCRIPTION Supply Voltage Interface Supply Voltage Ambient Temperature CMOS Low Level Input Voltage CMOS High Level Input Voltage CMOS Threshold Voltage
MIN 3.3 1.5 -20 0 0.7*VIO
TYP 4.0 3.0 27
MAX 4.2 3.6 +75 0.3*VIO VIO
UNIT V V ℃ V V V
0.5*VIO
Table 8-2 DC Electrical Specification (Absolute Maximum Ratings): SYMBOL VIO Tamb IIN VIN Vlna Notes: 1. For Pin: SCL, SDA DESCRIPTION Interface Supply Voltage Ambient Temperature Input Current (1) Input Voltage(1) LNA FM Input Level MIN -0.5 -40 -10 -0.3 TYP MAX +3.6 +90 +10 VIO+0.3 +10 UNIT V °C mA V dBm
Table 8-3 Power Consumption Specification (VBAT = 4.0 V, VIO=1.5 to 3.6V, TA = -25 to 85 ℃, unless otherwise specified) SYMBOL IA IVIO IAPD IVIO DESCRIPTION Analog Supply Current Interface Supply Current Analog Powerdown Current Interface Powerdown Current Condition ENABLE=1 SCL and SDA inactive ENABLE=0 ENABLE=0 TYP 20 90 5 10 UNIT mA μA μA μA
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
9 FM Section Receiver Characteristics
Table 9-1 Receiver Characteristics (VBAT = 4.0 V, VIO= 3.0V, TA = 25 °C, unless otherwise specified)
SYMBOL PARAMETER FM Input Frequency Range CONDITIONS Adjust BAND Register 50MHz 65MHz 88MHz 98MHz 108MHz 115MHz MIN 50 80 60 50 60 55 53 35 Single-ended Volume[3:0] =1111 Rload=1KΩ Rload=32Ω 32 Volume[3:0]=0000 1KHz=0dB ±3dB point Low Freq
9
TYP
MAX 115
UNIT MHz
General specifications
Fin
1.4 1.2 1.2 1.3 1.3 1.3 70 85 360 57 55 0.15 0.2 100 14
1.8 1.5 1.5 1.5 1.5 1.8 0.2 0.05 dBμV dB dB dB mV dB dB Ω % dB dB Hz μV EMF
Vrf
Sensitivity
1,2,3
S/N=26dB
IP3in
Input IP3
4
AGCD=1
1,2
αam
S200 S400 VAFL; VAFR S/N
AM Suppression
m=0.3 ±200KHz ±400KHz
1,2
Adjacent Channel Selectivity 400KHz Selectivity Audio L/R Output Voltage (Pins LOUT and ROUT) Maximum Signal to Noise Ratio
1,2,3,5
Volume [3:0] =1111 Mono2 Stereo
6
αSCS RL
THD
Stereo Channel Separation Audio Output Loading Resistance Audio Total Harmonic Distortion
1,3,6
αAOI
Rmute BWaudio
Audio Output L/R Imbalance1,6 Mute Attenuation Ratio1 Audio Response1
60 -
High Freq
Pins LNAN, LNAP, LOUT, ROUT and NC(22,23)
Vcom_rfin Vcom Vcom_nc
Pins
LNAN/LNAP
Input
Common Mode Voltage Audio Output Common Mode Voltage8 Pins NC ( 22,23 ) Common Mode Voltage 1.0
0 1.05 1.1
V V V
Floating
Notes:1. Fin=65 to 115MHz; Fmod=1KHz; de-emphasis=75μs; MONO=1; L=R unless noted otherwise;
2. Δf=22.5KHz; 3. BAF = 300Hz to 15KHz, RBW <=10Hz; 6. Δf=75KHz,fpilot=10% 5. PRF=60dBUV; 8. At LOUT and ROUT pins 4. |f2-f1|>1MHz, f0=2xf1-f2, AGC disable, Fin=76 to 108MHz; 7. Measured at VEMF = 1 m V, f RF = 65 to 108MHz 9. Adjustable
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
10 Pins Description
GPIO2/ WLAN_ACTIVE HOST_WAKE
FM_OUTR
UART_TX
FM_OUTL
VOUT12
32
31
30
29
28
27
NC
26
UART_RX 1 PCM_DOUT 2 PCM_DIN 3 PCM_CLK 4 PCM_SYNC 5 VIO 6 VOUT18 7 NC 8
NC
25
24 23
NC FM_IP FM_IN AGPIO1/BT_PRIORITY AGPIO0/BT_ACTIVE RF NC NC
GND PAD RDA5876P 32 Pins
22 21 20 19 18 17
9
10
11
12
13
14
15
16
XIN_32K
I2C_SDA
XEN_OUT
Figure10-1. RDA5876P Top View
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LDO_ON
I2C_SCL
VBAT
XIN
NC

RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
Table 10-1
RDA5876P Pins Description
PIN
NO.
DESCRIPTION
UART_RX PCM_DOUT PCM_DIN PCM_CLK PCM_SYNC VIO VOUT18 NC VBAT XIN_32K I2C_SDA I2C_SCL XEN_OUT XIN NC LDO_ON NC NC RF AGPIO0 AGPIO1 FM_IN FM_IP NC NC NC FM_OUTL FM_OUTR VOUT12 GPIO2 HOST_WAKE UART_TX
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
UART data input Synchronous data output Synchronous data input Synchronous data clock Synchronous data sync IO power supply Analog voltage output, connected with decouple capacitor Should be not connected Bluetooth and FM power supply 32.768K clock input I2C interface Data signal I2C interface Clock signal Clock request output For 26Mhz external clock input Should be not connected Internal LDO power on Should be not connected Should be not connected Bluetooth Radio signal Programmable I/O Also used ad bt_active when using WIFI co-existence handshake interface. Programmable I/O. Also used as bt_priority when using WIFI co-existence handshake interface. LNA input port. For single-ended input, LNAN should be connected to RFGND LNA input port. For single-ended input, LNAN should be connected to RFGND Should be not connected Should be not connected Should be not connected Left audio output Right audio output Digital voltage output, connected with decouple capacitor Programmable I/O. Also used as wl_active when using WIFI co-existence handshake interface. Output to wakeup host UART data output
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
11 Application Circuit
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
12 Package Physical Dimension
Figure12-1illustratesthepackage RoHS-compliant. details for the RDA5876P. The package is lead-free and
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RDA Microelectronics, Inc. Figure12-1. 32-Pin 4x4 Quad Flat No-Lead (QFN)
RDA5876P Datasheet V1.11
13 PCB Land Pattern
Figure13-3.Classification Reflow Profile
Table 13-1
Classification Reflow Profiles
Sn-Pb Eutectic Assembly 3 ℃/second max. Pb-Free Assembly 3 ℃/second max.
Profile Feature Average Ramp-Up Rate (TSmax to Tp) Preheat -Temperature Min (Tsmin) -Temperature Max (Tsmax) -Time (tsmin to tsmax) Time maintained above: -Temperature (TL) -Time (tL) Peak /Classification Temperature(Tp) Time within 5 oC of actual Peak Temperature (tp) Ramp-Down Rate Time 25 oC to Peak
100 ℃ 100 ℃ 60-120 seconds 183 ℃ 60-150seconds See Table 9-2 10-30 seconds 6 ℃/second max. 6 minutes max.
150 ℃ 200 ℃ 60-180 seconds 217℃ 60-150 seconds See Table 9-3 20-40 seconds 6 ℃/seconds max. 8 minutes max.
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RDA Microelectronics, Inc. Temperature
RDA5876P Datasheet V1.11
Table 13-2 Pb-free Process – Package Peak Reflow Temperatures Package Thickness Volume mm3 <350
＜2.5mm ≥2.5mm 240 + 0/-5 ℃ 225 + 0/-5 ℃
Volume mm3 ≥350 225 + 0/-5 ℃ 225 + 0/-5 ℃
Table 13-3 Pb-free Process – Package Classification Reflow Temperatures Package Volume mm3 Volume mm3 Volume mm3 Thickness 350-2000 ＜350 ＞2000
＜1.6mm 1.6mm – 2.5mm ≥2.5mm 260 + 0 ℃ * 260 + 0 ℃ * 250 + 0 ℃ * 260 + 0 ℃ * 250 + 0 ℃ * 245 + 0 ℃ * 260 + 0 ℃ * 245 + 0 ℃ * 245 + 0 ℃ *
*Tolerance : The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature(this mean Peak reflow temperature + 0 ℃. For example 260+ 0 ℃ ) at the rated MSL Level. Note 1: All temperature refer topside of the package. Measured on the package body surface. Note 2: The profiling tolerance is + 0 ℃, - X ℃ (based on machine variation capability)whatever is required to control the profile process but at no time will it exceed – 5 ℃. The producer assures process compatibility at the peak reflow profile temperatures defined in Table 13-3. Note 3: Package volume excludes external terminals(balls, bumps, lands, leads) and/or non integral heat sinks. Note 4: The maximum component temperature reached during reflow depends on package the thickness and volume. The use of convection reflow processes reduces the thermal gradients between packages. However, thermal gradients due to differences in thermal mass of SMD package may sill exist. Note 5: Components intended for use in a “lead-free” assembly process shall be evaluated using the “lead free” classification temperatures and profiles defined in Table13-1, 13-2, 13-3 whether or not lead free.
RoHS Compliant
The product does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB) or polybrominated biphenyl ethers (PBDE), and are therefore considered RoHS compliant.
ESD Sensitivity
Integrated circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices.
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RDA Microelectronics, Inc.
RDA5876P Datasheet V1.11
The information contained herein is the exclusive property of RDA and shall not be distributed, reproduced, or disclosed in whole or in part without prior written permission of RDA. Page 20 of 22