2SB649A三极管(TO-92L)
B ,Feb ,2013
2. COLLECTOR
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
2SB649/2SB649A TRANSISTOR (PNP)
FEATURES
z High Collector Current
z High Collector-Emitter Breakdown Voltage z Low Saturation Voltage
MAXIMUM RATINGS (T a =25℃ unless otherwise noted)
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Typ
Max Unit
Collector-base breakdown voltage V (BR)CBO I C =-1mA,I E =
0 -180
V 2SB649 -120 Collector-emitter breakdown voltage V (BR)CEO
I C =-10mA,I B =0
2SB649A
-160
V
Emitter-base breakdown voltage V (BR)EBO I E =-1mA,I C =0 -5 V
Collector cut-off current I CBO V CB =-160V,I E =
0 -10 μA Emitter cut-off current I EBO V EB =-4V,I C =
0 -10 μA
2SB649 60 320 h FE(1) V CE =-5V, I C =
-150mA
2SB649A
60 200
DC current gain
h FE(2)* V CE =-5V, I C =
-500mA 30
Collector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-50mA -1 V
Base-emitter voltage V BE V CE =-5V, I C =-150mA -1.5 V Collector output capacitance C ob V CB =-10V,I E =0, f=1MHz 27
pF Transition frequency f T
V CE =-5V,I C =-150mA
140
MHz
*Pulse test
CLASSIFICATION OF h FE(1)
2SB649 TYPE 2SB649A
RANK B
C
D
RANGE
60-120 100-200 160-320
Symbol Parameter Value Unit V CBO Collector-Base Voltage
-180
V 2SB649 -120
V CEO Collector-Emitter Voltage 2SB649A
-160 V V EBO Emitter-Base Voltage -5 V I C Collector Current
-1.5 A P C Collector Power Dissipation 900
mW R θJA Thermal Resistance From Junction To Ambient 139 ℃/W T j Junction Temperature 150 ℃ T stg
Storage Temperature
-55~+150
℃
Sponge strip
2000 pcs
Sponge strip The top gasket
Label on the Inner Box
Label on the Outer Box
Inner Box: 333 mm ×203mm ×42mm
Outer Box: 493 mm × 400mm × 264mm
QA Label
Seal the box with the tape
Stamp “EMPTY”
on the empty box
The top gasket
Inner Box: 240 mm ×165mm ×９５mm
Label on the Inner Box
Outer Box: 525 mm × 360mm × 262mm
Label on the Outer Box
QA Label
Seal the box with the tape
Stamp “EMPTY” on the empty box