XD1001-BD中文资料
Mimix Broadband ’s 18.0-50.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 17.0 dB with a noise figure of 5.0 dB across the band. The device also includes 30.0 dB gain control and a +15 dBm P1dB compression point. This MMIC uses Mimix Broadband ’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for microwave, millimeter-wave, wideband military, and fiber optic applications.
Absolute Maximum Ratings
Features
Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control
+15.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883Method 2010
General Description
Supply Voltage (Vd)Supply Current (Id)Gate Bias Voltage (Vg)Input Power (Pin)
Storage Temperature (Tstg)Operating Temperature (Ta)Channel Temperature (Tch)
+6.0 VDC 220 mA +0.3 VDC +15 dBm
-65 to +165 O C -55 to MTTF Table MTTF Table Chip Device Layout
(2) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
2
Frequency Range (f)Input Return Loss (S11)Output Return Loss (S22)Small Signal Gain (S21)Gain Flatness (?S21)
Gain Control
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)Output Third Order Intercept Point (OIP3)Drain Bias Voltage (Vd)Gain Control Bias (Vg)
Supply Current (Id) (Vd=5.0V, Vg=0.0 Typical)
Electrical Characteristics (Ambient T emperature T = 25 o C)
Parameter
Units GHz dB dB dB dB dB dB dB dBm dBm VDC VDC mA Min.18.0-----------2.0-Typ.-10.011.017.0+/-1.030.040.05.0+15.0+24.0+5.00.0160Max.50.0---------+5.5+.01190
(1) Measured using constant current.
112
Distributed Amplifier Measurements
May 2005 - Rev 01-May-05
Distributed Amplifier Measurements (cont.)
May 2005 - Rev 01-May-05
WP340 0445 Attenuation vs Vg for 36 to 41 GHz
Vg (V)
A t t e n u a t i o n (d
B )
36.013
37.012
38.011
39.01
40.009
41.008
Mechanical Drawing
Bond Pad #1 (RF In)Bond Pad #2 (Vd)
Bond Pad #3 (RF Out)Bond Pad #4 (Vg)
Bypass Capacitors - See App Note [2]
May 2005 - Rev 01-May-05
(Note: Engineering designator is 30DA0445)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.572 mg.
1
2
3
4
1.3000.3960.922(0.036)
1.950(0.077)
0.0
0.379 1.555(0.061)
1
3Vd
RF In
RF Out
Vg
RF Out
Vg
RF In
Vd
Device Schematic
App Note [1] Biasing - As shown in the bonding diagram, this device is operated with a single drain and a gain control voltage. Maximum gain bias is nominally Vd=5.0V, Vg=0V, Id=160mA. Gain can be adjusted by changing Vg. It is
recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is 0.0V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd and Vg) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
May 2005 - Rev 01-May-05
MTTF T able (TBD)
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel Temperature deg Celsius deg Celsius deg Celsius
FITs E+E+E+
MTTF Hours
E+E+E+
Rth C/W C/W C/W
Bias Conditions: Vd=5.0V, Id=160 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix
Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a
significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care,sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold
Germanium should be avoided). The work station temperature should be 310 C 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid
excessive thermal shock. Avoidance of air bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x
0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be
avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters.
Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
2+-May 2005 - Rev 01-May-05