BC846-A-AL3-R中文资料

UNISONIC TECHNOLOGIES CO., LTD

BC846-BC850

NPN SILICON TRANSISTOR

SWITCHING AND AMPLIFIER APPLICATION

FEATURES

* Suitable for automatic insertion in thick and thin-film circuits.

* Complement to BC856 … BC860

BC846L/BC847L/BC848L/BC849L/BC850L

ORDERING INFORMATION

Order Number

Pin Assignment

Normal

Lead Free Plating

Package

1 2 3 Packing

BC846-x-AE3-R BC846L-x-AE3-R SOT-23 E B C Tape Reel BC847-x-AE3-R BC847L-x-AE3-R SOT-23 E B C Tape Reel BC848-x-AE3-R BC848L-x-AE3-R SOT-23 E B C Tape Reel BC849-x-AE3-R BC849L-x-AE3-R SOT-23 E B C Tape Reel BC850-x-AE3-R BC850L-x-AE3-R SOT-23 E B C Tape Reel BC846-x-AL3-R BC846L-x-AL3-R SOT-323 E B C Tape Reel BC847-x-AL3-R BC847L-x-AL3-R SOT-323 E B C Tape Reel BC848-x-AL3-R BC848L-x-AL3-R

SOT-323 E

B C Tape Reel BC849-x-AL3-R BC849L-x-AL3-R SOT-323 E B C Tape Reel BC850-x-AL3-R BC850L-x-AL3-R SOT-323 E B C Tape Reel

MARKING

FE

ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)

PARAMETER SYMBOL VALUE UNIT

BC846 80 V

BC847 / BC85050 V

Collector-Base Voltage BC848 / BC849V CBO 30 V BC846 65 V

BC847 / BC85045 V

Collector-Emitter Voltage BC848 / BC849V CEO 30 V BC846 / BC847 6 V

Emitter-Base Voltage BC848 / BC849 / BC850

V EBO

5 V

Collector Current (DC) Ic 100 mA

SOT-23 310 mW

Collector Dissipation SOT-323 P D

200 mW

Junction Temperature T J +150 °C Storage Temperature T STG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector Cut-Off Current I CBO V CB =30V, I E =0 15nA DC Current Gain h FE V CE =5.0V, Ic=2.0mA 110 800

Ic=10mA,I B =0.5mA 90 250mV

Collector-Emitter Saturation Voltage V CE(SAT)

Ic=100mA,I B =5.0mA 200 600mV Ic=10mA,I B =0.5mA 700 mV

Collector-Base Saturation Voltage V BE(SAT)

Ic=100mA,I B =5.0mA 900 mV V CE =5.0V,Ic=2.0mA 580 660 700mV

Base-Emitter On Voltage V BE(ON)

V CE =5.0V,Ic=10mA 720mV Current Gain Bandwidth Product f T

V CE =5.0V,Ic=10mA

f=100MHz

300 MHz Output Capacitance Cob V CB =10V, I E =0, f=1.0MHz 3.5 6 pF Input Capacitance Cib V EB =0.5V, I C =0, f=1.0MHz 9 pF

BC846/BC847/BC848 2 10dB BC849/BC850 1.2 4 dB

BC849 1.4 4 dB Noise Figure BC850

NF

V CE =5V, Ic=200μA, f=1KHz, R G =2K ? V CE =5V, I C =200μA, R G =2K ?, f=30~15000Hz 1.4 3 dB CLASSIFICATION OF h FE

RANK A B C

RANGE 110-220 200-450 420-800

TYPICAL CHARACTERISTICS

020*********Collector -Emitter Voltage, V CE (V)

Static Characteristic

C o l l e c t o r C u r r e n t ,

I C (m A )

10

100

1000

DC Current Gain

D C C u r r e n t G a i n , h F E

Collector Current , I C (mA)

10100

Base-Emitter Saturation Voltage Collector -Emitter Saturation Voltage S a t u r a t i o n V o l t a g e , V B E (S A T )

, V C E (S A T ) (V )

Collector Current , I C (mA)

0.1

1

10

100

Base-Emitter on Voltage

C o l l e c t c u r r e n t , I C (m A )

Base-Emitter Voltage, V BE (V)

0.1

1

10

100

Collector Output Capacitance C a p a c i t a n c e

, C o b (p F )

Collector-Base Voltage , V CB (V)110

100

C u r r e n t G a i n -B a n d w i d t h P r o d u c t , f T (M H z )

Current Gain Bandwidth Product Collector Current , I C (mA)