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2STF1525;中文规格书,Datasheet资料

November 2009Doc ID 15794 Rev 21/7

2STF1525

Low voltage high performance NPN power transistor

Features

■Very low collector-emitter saturation voltage ■High current gain characteristic ■

Fast switching speed

Applications

■Emergency lighting ■LED drive

■Motherboard and hard disk drive ■Mobile equipment

DC-DC converter, voltage regulation

Description

The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

2STF1525;中文规格书,Datasheet资料

2STF1525;中文规格书,Datasheet资料

Table 1.

Device summary

Order codes Marking Package Packaging 2STF1525

1525

SOT -89

T ape and reel

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Electrical ratings 2STF1525

2/7 Doc ID 15794 Rev 2

1 Electrical ratings

Table 2.

Absolute maximum ratings

Symbol Parameter

Value Unit V CEX Collector-emitter voltage (V BE = - 1.5 V)95V V CEO Collector-emitter voltage (I B = 0)25V V EBO Emitter-base voltage (I C = 0)5V I C Collector current

5A I CM Collector peak current (t P < 5 ms)10A

I B Base current

1

A

P TOT Total dissipation at T amb = 25 °C 1.4W

T STG Storage temperature

-65 to 150°C

T J

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol Parameter

Value Unit R thJA (1)

1.Device mounted on PCB area of 1 cm 2

Thermal resistance junction-ambient __max

89

°C/W

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2STF1525Electrical characteristics

Doc ID 15794 Rev 23/7

2 Electrical characteristics

T case = 25 °C unless otherwise specified.Table 4.

Electrical characteristics

Symbol Parameter

Test conditions Min.

Typ.

Max.Unit I CBO Collector cut-off current

(I E = 0)

V CB = 50 V 0.1μA I EBO

Emitter cut-off current (I C = 0)

V EB = 4 V

0.1

μA

V (BR)CEX Collector-emitter breakdown voltage (V BE = -1.5 V)I C = 1 mA

95

V

V (BR)CEO (1)

1.Pulse test: pulse duration ≤ 300 μs, duty cycle ≤ 2 %

Collector-emitter breakdown voltage (I B = 0)

I C = 10 mA

25

V

V (BR)EBO

Emitter-base breakdown

voltage (I C = 0)I E = 100 μA

5

V

h FE

(1)

DC current gain

I C = 0.5 A V CE = 2 V

I C = 3 A V CE = 2 V I C = 5 A V CE = 5 V 150100

150500

V CE(sat) (1)Collector-emitter saturation voltage

I C = 3 A I B = 300 mA I C = 3.5 A I B = 40 mA 220

500mV mV V BE(sat) (1)

Base-emitter saturation voltage

I C = 3 A I B = 300 mA

1.2

V C CBO

Collector-base

capacitance (I E = 0)V CB = 10 V , f = 1 MHz 20pF f T T ransition frequency V CE = 10 V I C = 50 mA 120MHz t on t off

Resistive load T urn-on time T urn-off time

I C = 1.5 A V CC = 10 V I B1 = -I B2 = 150 mA

60450

ns ns

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Package mechanical data 2STF1525

4/7 Doc ID 15794 Rev 2

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK ? packages, depending on their level of environmental compliance. ECOPACK ? specifications, grade definitions and product status are available at: http://www.wendangku.net/doc/543e397e10a6f524cdbf853f.html . ECOPACK ? is an ST trademark.

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2STF1525Package mechanical data

2STF1525;中文规格书,Datasheet资料

Doc ID 15794 Rev 25/7

O b s o l

Revision history 2STF1525

6/7 Doc ID 15794 Rev 2

4 Revision history

Table 5.

Document revision history

Date Revision

Changes

04-Jun-20091Initial release.

12-Nov-2009

2

Document status promoted from preliminary data to datasheet.

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2STF1525

Doc ID 15794 Rev 27/7

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2STF1525