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LD7575PN

6/5/2007

1

Green-Mode PWM Controller with High-Voltage

Start-Up Circuit

REV: 04a

General Description

The LD7575 is a current-mode PWM controller with

excellent power-saving operation. It features a high-

voltage current source to directly supply the startup current

from bulk capacitor and further to provide a lossless startup

circuit. The integrated functions such as the leading-edge

blanking of the current sensing, internal slope compensation,

and the small package provide the users a high efficiency,

minimum external component counts, and low cost solution

for AC/DC power applications.

Furthermore, the embedded over voltage protection, over

load protection and the special green-mode control provide

the solution for users to design a high performance power

circuit easily. The LD7575 is offered in both SOP-8 and

DIP-8 package.

Features

z High-Voltage (500V) Startup Circuit

z Current Mode Control

z Non-Audible-Noise Green Mode Control

z UVLO (Under Voltage Lockout)

z LEB (Leading-Edge Blanking) on CS Pin

z Programmable Switching Frequency

z Internal Slope Compensation

z OVP (Over Voltage Protection) on Vcc

z OLP (Over Load Protection)

z500mA Driving Capability

Applications

z Switching AC/DC Adapter and Battery Charger

z Open Frame Switching Power Supply

z LCD Monitor/TV Power

Typical Application

2Pin Configuration

YY: Year code WW: Week code PP: Production code

SOP-8 & DIP-8 (TOP VIEW)

1

8

2

3

4

7

6

5

TOP MARK YYWWPP

R T

C O M P

C S

G N D

H V

N C

V C C

O U T

Ordering Information

Part number Package Top Mark Shipping LD7575 PS SOP-8 LD7575PS 2500 /tape & reel LD7575 PN

DIP-8

LD7575PN

3600 /tube /Carton

The LD7575 is ROHS compliant.

Pin Descriptions

PIN

NAME FUNCTION

1 RT

This pin is to program the switching frequency. By connecting a resistor to ground

to set the switching frequency. 2 COMP

Voltage feedback pin (same as the COMP pin in UC384X), By connecting a

photo-coupler to close the control loop and achieve the regulation. 3

CS

Current sense pin, connect to sense the MOSFET current

4 GND Ground 5

OUT

Gate drive output to drive the external MOSFET

6 VCC Supply voltage pin

7 NC Unconnected Pin

8 HV Connect this pin to positive terminal of bulk capacitor to provide the startup current

for the controller. When Vcc voltage trips the UVLO(on), this HV loop will be off to

save the power loss on the startup circuit.

3Block Diagram

OSC

COMP

CS

OUT

internal bias & Vref

VCC

GND

PWM

Comparator

RT 16.0V/

10.0V

Green-Mode Control Leading Edge Blanking

2R

R

R

S Q

Vref OK

PG

+

+

Slope

Compensation

27.5V

HV

0.85V

30mS Delay

5.0V

OCP

Comparator

OLP

Comparator

OVP

UVLO

Comparator Driver Stage

OVP

Comparator

R

S Q

VCC OK

OLP

PG

8V

POR

/2 Counter

clear

POR

Vbias

32V

1mA

R

S Q

PG

Absolute Maximum Ratings

Supply Voltage VCC 30V

High-Voltage Pin, HV -0.3V~500V

COMP, RT, CS -0.3 ~7V

Junction Temperature 150°C

Operating Ambient Temperature -40°C to 85°C

Storage Temperature Range -65°C to 150°C

Package Thermal Resistance (SOP-8) 160°C/W

Package Thermal Resistance (DIP-8) 100°C/W

Power Dissipation (SOP-8, at Ambient Temperature = 85°C) 400mW

Power Dissipation (DIP-8, at Ambient Temperature = 85°C) 650mW

Lead temperature (Soldering, 10sec) 260°C

ESD Voltage Protection, Human Body Model (except HV Pin) 3KV

ESD Voltage Protection, Machine Model 200V

Gate Output Current 500mA

Caution:

Stresses beyond the ratings specified in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Recommended Operating Conditions

Unit

Item Min.

Max.

Supply Voltage Vcc 11 25 V

Vcc Capacitor 10 47 μF

Switching Frequency 50 130 KHz

4

5Electrical Characteristics

(T A = +25o

C unless otherwise stated, V CC =15.0V)

PARAMETER CONDITIONS MIN TYP MAX UNITS

High-Voltage Supply (HV Pin) High-Voltage Current Source Vcc< UVLO(on), HV=500V 0.5 1.0 1.5 mA Off-State Leakage Current Vcc> UVLO(off), HV=500V

35

μA

Supply Voltage (Vcc Pin) Startup Current

100

μA

V COMP =0V 2.0 3.0 mA

V COMP =3V 2.5 4.0 mA Operating Current (with 1nF load on OUT pin) Protection tripped (OLP, OVP) 0.5 mA UVLO (off) 9.0 10.0 11.0 V UVLO (on) 15.0 16.0 17.0 V OVP Level

25.0

27.5

30.0

V

Voltage Feedback (Comp Pin) Short Circuit Current V COMP =0V 1.5 2.2 mA Open Loop Voltage

COMP pin open 6.0 V Green Mode Threshold VCOMP

2.35

V

Current Sensing (CS Pin) Maximum Input Voltage 0.80 0.85 0.90 V Leading Edge Blanking Time 350 nS Input impedance 1 M ? Delay to Output

100

nS

Oscillator (RT pin)

Frequency RT=100K ? 60.0 65.0 70.0 KHz Green Mode Frequency Fs=65.0KHz

20 KHz

Temp. Stability (-40°C

~105°C) 3 % Voltage Stability

(VCC=11V-25V)

1

%

Gate Drive Output (OUT Pin) Output Low Level VCC=15V, Io=20mA 1 V Output High Level VCC=15V, Io=20mA 9 V Rising Time Load Capacitance=1000pF 50 160 nS Falling Time

Load Capacitance=1000pF

30

60

nS

OLP (Over Load Protection) OLP Trip Level

5.0 V OLP Delay Time (note)

Fs=65KHz

30

mS

Note: The OLP delay time is proportional to the period of switching cycle. So that, the lower RT value will set the higher switching

frequency and the shorter OLP delay time.

6Typical Performance Characteristics

H V C u r r e n t S o u r c e (m A )

Temperature (°C)

Fig. 1 HV Current Source vs. Temperature (HV=500V, Vcc=0V)

0.7

0.9

1.1

1.3

1.5

-40

4080

120125

V C S (o f f ) (V )

T emperature (°C)

Fig. 2 V CS (off) vs. Temperature

0.85

0.86

0.87

0.88

0.89

0.90

-40040

80

120 125

U V L O (o n ) (V )

Fig. 3 UVLO (on) vs. Temperature

T emperature (°C)

14.0

14.8

15.6 16.4

17.2

18.0

-40

4080

120 125

U V L O (o f f ) (V )

Temperature (°C)

Fig. 4 UVLO (off ) vs. Temperature

8

9.6

10.4

12

8.8

-40

40

80

120 125

11.2

F r e q u e n c y (K H z )

Fig. 5 Frequency vs. Temperature

Temperature (°C)

-40

60

62

64

66

68

70

4080

120 125

F r e q u e n c y (K H z )

Temperature (°C)

Fig. 6 Green Mode Frequency vs. Temperature

16

18

20

22

24

26

-40

40

80

120 125

7

F r e q u e n c y (K H z )

Vcc (V) Fig. 7 Frequency vs. Vcc

12

14

16

1820

22

2460 11

25

62

64

66

68 70

G r e e n m o d e f r e q u e n c y (K H z )

Vcc (V)

Fig. 8 Green mode frequency vs. Vcc

12141618

20

22

2411

25

19

21

23

25

17

15

M a x D u t y (%)

Temperature (°C) Fig. 9 Max Duty vs. Temperature

-40

4080

120125

65 70 75

80 85

60

V C C O V P (V )

Temperature (°C)

Fig. 10 VCC OVP vs. Temperature

10

15

20

25

30

35

-40

40

80

120 125

V C O M P (V )

Temperature (°C)

Fig. 11 V COMP open loop voltage vs. T emperature

-40

0 40

80

120125

4.5

5.0

5.5

6.0

6.5

7.0

O L P (V )

Temperature (°C)

Fig. 12 OLP-Trip Level vs. T emperature

-40

40

80

120 125

3.5

4.0

4.5

5.0

5.5

6.0

8Application Information

Operation Overview

As long as the green power requirement becomes a trend and the power saving is getting more and more important for the switching power supplies and switching adaptors, the traditional PWM controllers are not able to support such new requirements. Furthermore, the cost and size limitation force the PWM controllers need to be powerful to integrate more functions to reduce the external part counts. The LD7575 is targeted on such application to provide an easy and cost effective solution; its detail features are described as below:

Internal High-Voltage Startup Circuit and Under Voltage Lockout (UVLO)

R1

OUT

CS

VCC

GND

LD7575

C1

Cbulk

D1

Rs

Comp

Vin

HV

Fig. 13

Traditional circuit powers up the PWM controller through a startup resistor to provide the startup current. However, the startup resistor consumes significant power which is more and more critical whenever the power saving requirement is coming tight. Theoretically, this startup resistor can be very high resistance value. However, higher resistor value will cause longer startup time.

To achieve an optimized topology, as shown in figure 13, LD7575 implements a high-voltage startup circuit for such requirement. During the startup, a high-voltage current source sinks current from the bulk capacitor to provide the startup current as well as charge the Vcc capacitor C1. During the startup transient, the Vcc is lower than the UVLO

threshold thus the current source is on to supply a current with 1mA. Meanwhile, the Vcc supply current is as low as 100μA thus most of the HV current is utilized to charge the Vcc capacitor. By using such configuration, the turn-on delay time will be almost same no matter under low-line or high-line conditions.

Whenever the Vcc voltage is higher than UVLO(on) to power on the LD7575 and further to deliver the gate drive signal, the high-voltage current source is off and the supply current is provided from the auxiliary winding of the transformer. Therefore, the power losses on the startup circuit can be eliminated and the power saving can be easily achieved.

An UVLO comparator is included to detect the voltage on the Vcc pin to ensure the supply voltage enough to power on the LD7575 PWM controller and in addition to drive the power MOSFET. As shown in Fig. 14, a hysteresis is provided to prevent the shutdown from the voltage dip

during startup. The turn-on and turn-off threshold level are set at 16V and 10.0V, respectively.

Vcc

UVLO(on)

UVLO(off)

t

t

HV Current

1mA

Startup Current (<100uA)

Vcc current

~ 0mA (off)

Operating Current

(Supply from Auxiliary Winding)

Fig. 14

9Current Sensing, Leading-edge Blanking and the Negative Spike on CS Pin

The typical current mode PWM controller feedbacks both current signal and voltage signal to close the control loop and achieve regulation. The LD7575 detects the primary MOSFET current from the CS pin, which is not only for the peak current mode control but also for the pulse-by-pulse current limit. The maximum voltage threshold of the current sensing pin is set as 0.85V. Thus the MOSFET peak current can be calculated as:

S

)MAX (PEAK R V

85.0I =

A 350nS leading-edge blanking (LEB) time is included in the input of CS pin to prevent the false-trigger caused by the current spike. In the low power application, if the total pulse width of the turn-on spikes is less than 350nS and the negative spike on the CS pin is not exceed -0.3V, the R-C filter (as shown in figure15) can be eliminated.

However, the total pulse width of the turn-on spike is related to the output power, circuit design and PCB layout. It is strongly recommended to add the small R-C filter (as shown in figure 16) for higher power application to avoid the CS pin damaged by the negative turn-on spike.

Output Stage and Maximum Duty-Cycle

An output stage of a CMOS buffer, with typical 500mA driving capability, is incorporated to drive a power MOSFET directly. And the maximum duty-cycle of LD7575 is limited to 75% to avoid the transformer saturation.

Voltage Feedback Loop

The voltage feedback signal is provided from the TL431 in the secondary side through the photo-coupler to the COMP pin of LD7575. The input stage of LD7575, like the UC384X, is with 2 diodes voltage offset then feeding into the voltage divider with 1/3 ratio, that is,

)V 2V (3

1

)V F COMP PWM (COMPARATOR ?×=

+ A pull-high resistor is embedded internally thus can be eliminated on the external circuit.

Fig. 15

Fig. 16

10Oscillator and Switching Frequency

Connecting a resistor from RT pin to GND according to the equation can program the normal switching frequency:

)KHz (100RT 0

.65f )

K (SW ×=?

The suggested operating frequency range of LD7575 is within 50KHz to 130KHz.

Internal Slope Compensation

A fundamental issue of current mode control is the stability problem when its duty-cycle is operated more than 50%. To stabilize the control loop, the slope compensation is needed in the traditional UC384X design by injecting the ramp signal from the RT/CT pin through a coupling capacitor. In LD7575, the internal slope compensation circuit has been implemented to simplify the external circuit design.

On/Off Control

The LD7575 can be controlled to turn off by pulling COMP pin to lower than 1.2V. The gate output pin of LD7575 will be disabled immediately under such condition. The off mode can be released when the pull-low signal is removed.

Dual-Oscillator Green-Mode Operation

There are many difference topologies has been implemented in different chips for the green-mode or power saving requirements such as “burst-mode control”, “skipping-cycle Mode”, “variable off-time control “…etc. The basic operation theory of all these approaches intended to reduce the switching cycles under light-load or no-load condition either by skipping some switching pulses or reduce the switching frequency.

Over Load Protection (OLP)

To protect the circuit from the damage during over load condition or short condition, a smart OLP function is implemented in the LD7575. Figure 17 shows the waveforms of the OLP operation. Under such fault condition, the feedback system will force the voltage loop toward the saturation and thus pull the voltage on COMP pin (VCOMP) to high. Whenever the VCOMP trips the OLP

threshold 5.0V and keeps longer than 30mS (when switching frequency is 65KHz), the protection is activated and then turns off the gate output to stop the switching of power circuit. The 30mS delay time is to prevent the false trigger from the power-on and turn-off transient.

A divide-2 counter is implemented to reduce the average power under OLP behavior. Whenever OLP is activated, the output is latched off and the divide-2 counter starts to count the number of UVLO(off). The latch is released if the 2nd UVLO(off) point is counted then the output is recovery to switching again.

By using such protection mechanism, the average input power can be reduced to very low level so that the component temperature and stress can be controlled within the safe operating area.

Fig. 17

OVP (Over Voltage Protection) on Vcc

The Vgs ratings of the nowadays power MOSFETs are most with maximum 30V. To prevent the Vgs from the fault condition, LD7575 is implemented an OVP function on Vcc. Whenever the Vcc voltage is higher than the OVP threshold voltage, the output gate drive circuit will be shutdown simultaneous thus to stop the switching of the power MOSFET until the next UVLO(on).

The Vcc OVP function in LD7575 is an auto-recovery type protection. If the OVP condition, usually caused by the

11feedback loop opened, is not released, the Vcc will tripped the OVP level again and re-shutdown the output. The Vcc is working as a hiccup mode. Figure 18 shows its operation.

On the other hand, if the OVP condition is removed, the Vcc level will get back to normal level and the output is automatically returned to the normal operation.

VCC

UVLO(on)UVLO(off)

t

OVP Tripped

t

OUT

Switching

Switching

Non-Switching OVP Level

Fig. 18

Fault Protection

A lot of protection features have been implemented in the LD7575 to prevent the power supply or adapter from being damaged caused by single fault condition on the open or short condition on the pin of LD7575. Under the conditions listed below, the gate output will be off immediately to protect the power circuit --- y RT pin short to ground y RT pin floating

y

CS pin floating

Pull-Low Resistor on the Gate Pin of MOSFET

In LD7575, an anti-floating resistor is implemented on the OUT pin to prevent the output from any uncertain state which may causes the MOSFET working abnormally or false triggered-on. However, such design won’t cover the condition of disconnection of gate resistor Rg thus it is still strongly recommended to have a resistor connected on the MOSFET gate terminal (as shown in figure 19) to provide extra protection for fault condition.

This external pull-low resistor is to prevent the MOSFET from damage during power-on under the gate resistor is disconnected. In such single-fault condition, as show in figure 21, the resistor R8 can provide a discharge path to avoid the MOSFET from being false-triggered by the current through the gate-to-drain capacitor Cgd. Therefore, the MOSFET is always pull-low and kept in the off-state whenever the gate resistor is disconnected or opened in any case.

Fig. 19

12dt

dV Cgd i bulk ?

=

Fig. 20

Protection Resistor on the Hi-V Path

In some other Hi-V process and design, there may cause a parasitic SCR between HV pin, Vcc and GND. As shown in figure 22, a small negative spike on the HV pin may trigger this parasitic SCR and causes the latchup between

Vcc and GND. And such latchup is easy to damage the chip because of the equivalent short-circuit which is induced by such latchup behavior.

Thanks to the Leadtrend’s proprietary Hi-V technology, there is no such parasitic SCR in LD7575. Figure 23 shows the equivalent circuit of LD7575’s Hi-V structure. So that LD7575 is with higher capability to sustain negative voltage than similar products. However, a 10K ? resistor is recommended to implement on the Hi-V path to be played the role as a current limit resistor whenever a negative voltage is applied in any case.

Fig. 21

Fig. 22

13

Reference Application Circuit --- 10W (5V/2A) Adapter

Pin < 0.15W when Pout = 0W & Vin = 264Vac

Schematic

BOM

P/N Component

Value Original R1A N/A

R1B N/A

R4A 39K?, 1206

R4B 39K?, 1206

R6 2.2?, 1206

R7 10?, 1206

R8 10K?, 1206

R9 10K?, 1206

RS1 2.7?, 1206, 1%

RS2 2.7?, 1206, 1%

RT 100K?, 0805, 1%

R51A 100?, 1206

R51B 100?, 1206

R52 2.49K?, 0805, 1%

R53 2.49K?, 0805, 1%

R54 100?, 0805

R55 1K?, 0805

R56A 2.7K?, 1206

R56B N/A

NTC1 5?, 3A 08SP005

FL1 20mH UU9.8

T1 EI-22

L51 2.7μH

P/N Component

Value Note C1 22μF, 400V L-tec

C2 22μF, 50V L-tec

C4 1000pF,

1000V,

1206

Holystone C5 0.01μF, 16V, 0805

C51 1000pF, 50V, 0805

C52 1000μF, 10V L-tec

C54 470μF, 10V L-tec

C55 0.022μF, 16V, 0805

CX1 0.1μF X-cap CY1 2200pF Y-cap

D1A 1N4007

D1B 1N4007

D1C 1N4007

D1D 1N4007

D2 PS102R

D4 1N4007

Q1 2N60B 600V,

2A CR51 SB540

ZD51 6V2C

IC1 LD7575PS SOP-8

IC2 EL817B

IC51 TL431 1%

F1 250V,

1A

Z1 N/A

14

Package Information

SOP-8

Dimensions in Millimeters Dimensions in Inch

Symbols

MIN MAX MIN MAX

A 4.801 5.004 0.189 0.197

B 3.810 3.988 0.150 0.157

C 1.346 1.753 0.053 0.069

D 0.330 0.508 0.013 0.020

F 1.194 1.346 0.047 0.053

H 0.178 0.229 0.007 0.009

I 0.102 0.254 0.004 0.010

J 5.791 6.198 0.228 0.244

M 0.406 1.270 0.016 0.050

θ0° 8° 0° 8°

15

16Package Information

DIP-8

Dimension in Millimeters Dimensions in Inches Symbol

Min

Max

Min

Max

A 9.017 10.160 0.355 0.400

B 6.096 7.112 0.240 0.280

C ----- 5.334 ------ 0.210

D 0.356 0.584 0.014 0.023

E 1.143 1.778 0.045 0.070

F 2.337 2.743 0.092 0.108 I 2.921 3.556 0.115 0.140 J 7.366 8.255 0.29 0.325 L 0.381 ------ 0.015 --------

Important Notice

Leadtrend Technology Corp. reserves the right to make changes or corrections to its products at any time without notice. Customers should verify the datasheets are current and complete before placing order.

Revision History

Rev. Date Change Notice

00 07/21/’05 Original Specification.

01 07/28/’05 1. Page 2, Remove the unexpected code “skype.lnk” before the “ordering information”.

2. Page 4, Recommended operating condition, change the “min. supply voltage Vcc”

from 10V to 11V since the UVLO range is from 9V to 11V.

3. Page 9, Add the gate resistor on figure 15 and figure 16 to avoid misunderstanding.

4. Page 11, Add the description “Figure 17 shows its operation.” In the section of “OVP

on Vcc”.

5. Page 13, Add “Vin=264Vac” on the title.

02 10/24/’05 1. Add DIP-8 Package

a. Page 1 --- modify the general description “The LD7575 is offered in both

SOP-8 and DIP-8 package.”.

b. Page 2 --- Add DIP-8 data on the “pin configuration” and “ordering

information”.

c. Page 4 --- Add DIP-8 data on the “absolute maximum rating”.

d. Page 15 --- Add DIP-8 package drawing

2. Add information of HV current limit resistor and gate-to-GND resistor

a. Page 1, 8 (figure13), 9 (figure15,16), 12, 13 --- Update the drawing, BOM and

schematics for such resistors.

b. Page 11, 12 --- Add the sections “Pull-Low Resistor on the Gate Pin of

MOSFET”, “Protection Resistor on the Hi-V Path” and figure 19~22.

c. Page 4 --- Add negative voltage limitation of HV pin on the “absolute maximum

rating”.

3. Correction on the block diagram

a. Page 3 --- Add flip-flop on the OVP loop to be matched with the OVP operation

and add the anti-floating resistor on the output.

4. Correction on the description of Over Load Protection (OLP)

a. Page 10 --- Original description “Whenever….30mS (when switching

frequency is 100KHz)”. Where the “100KHz” should be corrected to “65KHz”.

Continued…

17

03 11/28/’05 1. Page3, Correction on the block diagram by modifying the AND gate (following the

PWM comparator) to OR gate.

2. Page 5, Correction on the parameters on “Gate Drive Output” because LD7575 can

support to 500mA driving capability but the parameters in the previous datasheet are

for 300mA driving current. The output high level will be updated from min. 8V to min.

9V. The rising time will be updated from max. 200nS to max. 160nS. The falling time

will be updated from max. 100nS to max. 60nS. All these parameters are for

correction and no design change on the related circuits.

04 1/22/’07 Revision: Block Diagram

04a 6/5/2007 HV=500V (supplement to HV current source/ off state leakage current)

18

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