JANTXV2N6798U中文资料
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Product Summary
Part Number BV DSS R DS(on)I D IRFE230
200V
0.40?
5.5A
Features:
n Hermetically Sealed
n Simple Drive Requirements n Ease of Paralleling n Small footprint n Surface Mount n
Lightweight
Absolute Maximum Ratings
Parameter
IRFE230, JANTX-, JANTXV-, 2N6798U Units
I D
@ V GS = 10V, T C = 25°C Continuous Drain Current 5.5
I D
@ V GS = 10V, T C = 100°C
Continuous Drain Current 3.5
I DM
Pulsed Drain Current 22P D @ T C = 25°C
Max. Power Dissipation 25W Linear Derating Factor 0.20W/K V GS Gate-to-Source Voltage
±20V E AS Single Pulse Avalanche Energy 98mJ dv/dt Peak Diode Recovery dv/dt 6.3V/ns T J Operating Junction
-55 to 150
T STG
Storage T emperature Range Surface T emperature 300 ( for 5 seconds)Weight
0.42 (typical)
g
N-CHANNEL
Provisional Data Sheet No. PD - 9.1715
200Volt, 0.40?, HEXFET
The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface mount technology. The LCC provides designers the extra flexibility they need to increase circuit board density. International Rectifier has engineered the LCC package to meet the specific needs of the power market by increasing the size of the bottom source pad, thereby enhancing the thermal and electrical performance. The lid of the package is grounded to the source to reduce RF interference.
HEXFET transistors also feature all of the well-es-tablished advantages of MOSFETs, such as volt-age control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is re-quired.
o
C
A 1/5/98
IRFE230
REPETITIVE AV ALANCHE AND dv/dt RATED JANTX2N6798U HEXFET ? TRANSISTOR JANTXV2N6798U
[REF:MIL-PRF-19500/557]
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IRFE230, JANTX-, JANTXV-, 2N6798U Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BV DSS
Drain-to-Source Breakdown Voltage
200——V V GS =0 V , I D = 1.0mA ?BV DSS /?T J Temperature Coefficient of Breakdown
—0.27—V/°C
Reference to 25°C, I D = 1.0mA Voltage
DS(on)GS D On-State Resistance
——0.46?V GS = 10V , I D = 5.5A V GS(th)Gate Threshold Voltage 2.0— 4.0V V DS = V GS , I D = 250μA g fs Forward T ransconductance 3.4——S ( )
V DS > 15V , I DS = 3.5A I DSS Zero Gate Voltage Drain Current
——25V DS = 0.8 x Max Rating,V GS =0V
——250V DS = 0.8 x Max Rating V GS = 0V , T J = 125°C
I GSS Gate-to-Source Leakage Forward ——100V GS = 20 V I GSS Gate-to-Source Leakage Reverse ——-100V GS = -20V
Q g Total Gate Charge
——42V GS = 10V , I D = 5.5A Q gs Gate-to-Source Charge
—— 5.3nC
V DS = Max Rating x 0.5
Q gd Gate-to-Drain (‘Miller’) Charge ——28d (on)DD D t r Rise Time
——50R G = 7.5?
t d (off)Turn-Off Delay Time ——50t f Fall Time
——40L D Internal Drain Inductance — 1.8—L S
Internal Source Inductance
—
4.3
—
C iss Input Capacitance —740—V GS = 0V, V DS = 25 V
C oss Output Capacitance
—240—pF
f = 1.0MHz
C rss
Reverse T ransfer Capacitance —74—
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I S Continuous Source Current (Body Diode)—— 5.5I SM Pulse Source Current (Body Diode) ——22V SD Diode Forward Voltage —— 1.4V T j = 25°C, I S = 5.5A, V GS = 0V t rr Reverse Recovery Time ——500ns T j = 25°C, I F = 5.5A, di/dt ≤ 100A/μs
Q RR Reverse Recovery Charge —
—
6.0
μC
V DD ≤ 50V
t on
Forward T urn-On Time
Intrinsic turn-on time is negligible. T urn-on speed is substantially controlled by L S + L D .
A
IRFE230, JANTX-, JANTXV-, 2N6798U Device
Vs. Temperature
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IRFE230, JANTX-, JANTXV-, 2N6798U Device
Gate-to-Source Voltage
Drain-to-Source Voltage Forward Voltage
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IRFE230, JANTX-, JANTXV-, 2N6798U Device
Fig 10a.
Switching Time Test Circuit
V V d(on)
r
d(off)
f
Fig 10b. Switching Time Waveforms
DD
Case Temperature
6
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IRFE230, JANTX-, JANTXV-, 2N6798U Device
V
DS
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
I A
S
V D D
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IRFE230, JANTX-, JANTXV-, 2N6798U Device
Fig 14. For N-Channel HEXFETS
* V GS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
V DD
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IRFE230, JANTX-, JANTXV-, 2N6798U Device
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
https://www.wendangku.net/doc/5410199462.html,/Data and specifications subject to change without notice.
1/98
Repetitive Rating; Pulse width limited by maximum junction temperature.Refer to current HEXFET reliability report. Pulse width ≤ 300 μs; Duty Cycle ≤ 2% I SD ≤ 5.5A, di/dt ≤ 99 A/μs,
V DD ≤ BV DSS , T J ≤ 150°C
Suggested R G = 2.35?
@ V DD = 50 V , Starting T J = 25°C,
E AS = [0.5 * L * (I L 2) ]
Peak I L = 5.5A, V GS =10 V , 25 ≤ R G ≤ 200? K/W = °C/W
Notes:
Case Outline and Dimensions — Leadless Chip Carrier (LCC) Package