TSM4415CSRL中文资料
Preliminary TSM4415
30V P-Channel MOSFET
SOP-8
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch ● PA Switch
Ordering Information
Part No.
Package
Packing
TSM4415CS RL
SOP-8
2.5kpcs/13” reel
Absolute Maximum Rating (Ta = 25 o C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V DS -30 V Gate-Source Voltage
V GS ±25 V Continuous Drain Current, V GS @4.5V. I D -8 A Pulsed Drain Current, V GS @4.5V
I DM -30 A Continuous Source Current (Diode Conduction)a,b I S
-1
A
Ta = 25 o C 3
Maximum Power Dissipation Ta = 70o
C P
D 2.1
W Operating Junction Temperature
T J +150 o C Operating Junction and Storage Temperature Range
T J , T STG
- 55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Foot (Drain) Thermal Resistance
R ?JF 30 o
C/W Junction to Ambient Thermal Resistance (PCB mounted)
R ?JA 75 o C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 se
c.
PRODUCT SUMMARY V DS (V) R DS(on)(m ?)
I D (A)
26 @ V GS = -20V -8.0 -30
35 @ V GS = -10V
-8.0
Block Diagram
P-Channel MOSFET
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4.Gate 5,Drain
(1,2,3)
(5,6,7,8)
(4)
Preliminary TSM4415
30V P-Channel MOSFET
Electrical Specifications
Parameter Conditions
Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V GS = 0V, I D = -250uA BV DSS -30 -- -- V Gate Threshold Voltage V DS = V GS , I D = -250μA V GS(TH) -1.0 -- -3.0 V
Gate Body Leakage
V GS = ±20V, V DS = 0V I GSS -- -- ±100 nA Zero Gate Voltage Drain Current V DS = -24V, V GS = 0V I DSS -- -- -1.0 μA
On-State Drain Current a
V DS ≥-10V, V GS = -5V I D(ON) -6 -- -- A
V GS = -20V, I D = -8A
-- 21 26 V GS = -10V, I D = -8A
--
28
35
Drain-Source On-State Resistance a V GS = -6V, I D = -5A
R DS(ON)
-- 41 --
m ?
Forward Transconductance a V DS = -5V, I D = -8A g fs -- 11.5 -- S
Diode Forward Voltage I S = -1A, V GS = 0V
V SD -- -0.8
-1.0 V Dynamic b Total Gate Charge Q g -- 18.1 -- Gate-Source Charge Q gs -- 6.5 -- Gate-Drain Charge V DS = -15V, I D = -8A,
V GS = -10V
Q gd -- 3.2 -- nC Input Capacitance C iss -- 1047.9 -- Output Capacitance
C oss -- 172.8 -- Reverse Transfer Capacitance V DS = -15V, V GS = 0V, f = 1.0MHz
C rss -- 115.5 --
pF Switching c Turn-On Delay Time t d(on) -- 20.5 -- Turn-On Rise Time t r -- 4.4 --
Turn-Off Delay Time
t d(off) -- 42.8 --
Turn-Off Fall Time
V DD = -15V, R L = 1.8?, I D = -1A, V GEN = -10V, R G = 3?
t f -- 7.3 --
nS Notes:
a. pulse test: PW ≤300μS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
Preliminary TSM4415
30V P-Channel MOSFET
Preliminary TSM4415
30V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.