SMBTA55中文资料
PNP Silicon AF Transistors
SMBTA 55
SMBTA 56
Maximum Ratings Type Ordering Code (tape and reel)Marking Package 1)Pin Configuration SMBTA 55SMBTA 56
Q68000-A3386Q68000-A2882
s2H s2G
SOT-23
123B
E
C
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40mm × 40mm × 1.5mm/6cm 2 Cu.
Parameter
Symbol Values
Unit Collector-emitter voltage V CE0V
Collector current I C mA Junction temperature T j ?C
Total power dissipation,T S =79?C P tot mW Storage temperature range T stg
Collector-base voltage V CB0Thermal Resistance Junction - ambient 2)R th JA ≤ 285K/W
500330150– 65 … + 150
Emitter-base voltage V EB060
80SMBTA 55SMBTA 56Junction - soldering point
R th JS
≤ 215
46080Peak collector current I CM A 1Peak base current
I BM 200Base current I B mA 100q
High breakdown voltage
q Low collector-emitter saturation voltage
q Complementary types:SMBTA 05, SMBTA 06 (NPN)
Electrical Characteristics
at T A = 25 ?C, unless otherwise specified.Base-emitter saturation voltage 1)I C = 100mA,V CE = 1V V BE
–
–
1.2
Collector-emitter saturation voltage 1)I C = 100mA,I B = 10mA V
Collector-emitter breakdown voltage I C = 1mA SMBTA 55
SMBTA 56V (BR)CE0
6080
––
––
Unit
Values Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage I C = 100μA SMBTA 55
SMBTA 56V (BR)CB0
6080
––––Emitter-base breakdown voltage I E = 10μA
V (BR)EB04
–
–
nA nA μA μA Collector-base cutoff current V CB = 60V SMBTA 55V CB = 80V
SMBTA 56V CB = 60V,T A = 150 ?C SMBTA 55V CB = 80V,T A = 150 ?C SMBTA 56
I CB0
––––––––1001002020–
DC current gain 1)
I C = 10mA,V CE = 1V I C = 100mA,V CE = 1V
h FE
100100
–130–170V
V CEsat ––0.25nA Collector cutoff current V CE = 60V
I CE0–
–
100
MHz Transition frequency
I C = 20mA,V CE = 5V,f = 20MHz f T –100–AC characteristics
pF
Output capacitance V CB = 10V,f = 1MHz
C obo
–
12
–
1)
Pulse test conditions:t ≤300μs,D =2%.
Total power dissipation P tot=f(T A*;T S) *Package mounted on epoxy
Permissible pulse load P tot max/P tot DC =f (t p
)
Collector current I C=f(V BE)
V CE = 1V
Transition frequency f T=f(I C)
V CE = 5
V
Base-emitter saturation voltage I C =f (V BE sat ),h FE = 10Collector cutoff current I CB0=f (T A )V CB =V
CE max Collector-emitter saturation voltage I C =f (V CE sat ),h FE = 10
DC current gain h FE =f (I C )V CE =1
V