BAS40SL — Schottky Barrier Diodes
December 2007
BAS40SL
Schottky Barrier Diodes
Features
?Low Forward Voltage Drop ?Fast switching
?Very Small and Thin SMD package ?Profile height, 0.43mm max ?Footprint, 1.0 x 0.6 mm
Connection Diagram
2
1
2
1
SOD-923 Marking: AA
Absolute Maximum Ratings * T A
= 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
V RRM Maximum Repetitive Reverse Voltage 40V I F(AV)Average Rectified Forward Current 100mA I FSM Forward Surge Current
( 8.3mS Single Half Sine-Wave)600mA P D Power Dissipation
227mW T J, T STG
Operating Junction & Storage Temperature Range
-55 to +150
°C
* These ratings are limiting values above which the serviceability of the diode may be impaired. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
Parameter
Value
Unit
R θJA
Thermal Resistance, Junction to Ambient *
550
°C/W
* Minimum land pad.
Electrical Characteristics T A
=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V R Breakdown Voltage I R = 10μA 40
V V F Forward Voltage I F = 1mA I F = 40mA 3801000mV mV I R Reverse Leakage V R = 30V
0.2μA trr Reverse Recovery Time I F = I R = 10mA, irr= 0.1I R 8.0nS C j
Junction Capacitance
V R = 0, f = 1.0MHz
5.0
pF
BAS40SL — Schottky Barrier Diodes
BAS40SL Schottky Barrier Diodes
BAS40SL
Rev. I31
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2.
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Build it Now?CorePLUS?CROSSVOLT ?CTL?
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?
PDP-SPM?Power220?
Power247?
POWEREDGE ?Power-SPM?PowerTrench ?
Programmable Active Droop?QFET ?QS?
QT Optoelectronics?Quiet Series?RapidConfigure?SMART START?SPM ?
STEALTH?SuperFET?SuperSOT?-3SuperSOT?-6
SuperSOT?-8SyncFET?
The Power Franchise ?
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UniFET?VCX?
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Advance Information
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This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
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This datasheet contains specifications on a product that has been discontin-ued by Fairchild semiconductor. The datasheet is printed for reference infor-mation only.