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DHM3FG80中文资料

PDE-DHM3FG80-0

HIGHT VOLTAGE FAST RECOVERY DIODE

DHM3FG80

FEATURES

? For high resolution displays and TV receivers.? Diffused-junction.

? Excellent high temperature output characteristics ( Small leakage current at high temperature and excellent reverse characteristics )

ABSOLUTE MAXIMUM RATINGS

Item

Type

DHM3FG80

Repetitive Peak Reverse Voltage*V RRM kV 8Non-Repetitive Peak Reverse Voltage*V RSM kV 10

1 ( 63 kHz C-Load )Average Forward Current

I F(AV)mA 3 ( 15.75kHz C-Load )

Surge(Non-Repetitive) Forward Current I FSM A 0.5Operating Junction Temperature T j °C -40 ~ +120Storage Temperature

T stg

°C

-40 ~ +120

CHARACTERISTICS (T C =25°C unless otherwise specified)

Item

Symbols

Units

Min.

Typ.

Max.

Test Conditions

Peak Reverse Current*I RRM μA -- 2.0 V R = V RRM Peak Forward Voltage V FM V --28 I FM = 5mAp

Reverse Recovery Time

trr

ns

-

-

70

I F = 2mA, I RP = 5mA, 1mA recovery

Notes *Diode tested in adequate thermal and dielectric medium.

HITACHI POWER SEMICONDUCTORS

For inquiries relating to the products, please contact nearest overseas representatives which is located “Inquiry” portion on the top page of a home page.

Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse

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