MJD340T4;MJD350T4;中文规格书,Datasheet资料

MJD340MJD350

COMPLEMENTARY SILICON POWER TRANSISTORS

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STMicroelectronics PREFERRED SALESTYPES

s COMPLEMENTARY PNP - NPN DEVICES s MEDIUM VOLTAGE CAPABILITY

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SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")

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ELECTRICAL SIMILAR TO MJE340 AND MJE350

APPLICATIONS s SOLENOID/RELAY DRIVERS

s GENERAL PURPOSE SWITCHING AND AMPLIFIER DESCRIPTION The MJD340 and MJD350 form complementary NPN - PNP pairs.

They are manufactured using Medium Voltage Epitaxial-Planar technology, resulting in a rugged high performance cost-effective transistor.

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September 2003

ABSOLUTE MAXIMUM RATINGS

1/5

THERMAL DATA

ELECTRICAL CHARACTERISTICS (T case = 25 o

C unless otherwise specified)

For PNP type voltage and current values are negative.

Safe Operating Area

Derating Curve

MJD340 / MJD350

DC Current Gain (NPN type)

Collector Emitter Saturation Voltage (NPN type)

DC Current Gain (PNP type)

Collector Emitter Saturation Voltage (PNP type)

MJD340 / MJD350

MJD340 / MJD350

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MJD340 / MJD350

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MJD340T4MJD350T4