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E13003

E13003

ELECTRICAL CHARACTERISTICS

Tc=25o

C unless otherwise specified

FEATURES

NPN SILICON TRANSISTOR Tc=25o

C unless otherwise specified

Parameter

Symbol

Test conditions

MIN

MAX UNIT

Collector-base breakdown voltage V (BR)CBO I C =1mA , I E =0I C =10mA , I B =0I E =1mA , I C =0V CB =700V , I E =0V CE =400V , I B =0V EB =9V , I C =0V CE =2V , I C =0.5mA V CE =10V , I C =0.5mA I C =1A , I B =250mA I C =1A , I B =250mA I E =2A

V CE =10V , I C =100mA f=1MHz

I C =1A , I B1=-I B2=0.2mA ,V CC =100V

V 70040011

40

11.23

0.52.55009

85

5

V V

mA

¥ìA

mA

V V V MHz

¥ìS ¥ìS

V (BR)CEO V (BR)EBO I CBO I CEO I EBO h FE(1)h FE(2)V CEsat V

E13003

BEsat V BE f T t f t s

Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain

Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Fall time Storage time

SWITCHING REGULATOR APPLICATION

• High speed switching

• Suitable for switching regulator and motor control

• Case : TO-126 molded plastic body

Parameter

Symbol

Value

UNIT

Collector dissipation P C W 201.53

A A

I C I CP Collector current (DC)Collector current (Pulse)

-55 o

C to +150 o

C

E13003

o

C

T J , T STG

Operating and storage junction temperature range

TO-126

H

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