N-Channel Enhancement Mode Field Effect Transistor
Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (T A =25 C unless otherwise noted)
THERMAL CHARACTERISTICS
SamHop Microelectronics Corp.
FEATURES
Super high dense cell design for low R DS(ON ).
Rugged and reliable.OCT.29, 2004 V1.1
1
STM9410
STM9410
ELECTRICAL CHARACTERISTICS (T A 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage
V SD
V GS = 0V, Is =1.7A
0.82 1.1
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. Capacitance
V DS , Drain-to Source Voltage (V)V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)I D , Drain Current(A)
I D , D r a i n C u r r e n t (A )
C , C a p a c i t a n c e (p F )
O n -R e s i s t a n c e (O h m s )
I D , D r a i n C u r r e n t (A )
a.Surface Mounted on FR4 Board, t 10sec.
3
R D S (O N ),10
8
6420
0.5
1
1.5
2
2.5
3
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.030
0.0250.020
0.0150.0100.005
5
10
15
20
25
30
STM9410
F igure 5.
G ate T hres hold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
V t h , N o r m a l i z e d G a t e -S o u r c e T h r e s h o l d V o l t a g e
g F S , T r a n s c o n d u c t a n c e (S )
V G S , G a t e t o S o u r c e V o l t a g e (V )
B V D S S , N o r m a l i z e d D r a i n -S o u r c e B r e a k d o w n V o l t a g e
I s , S o u r c e -d r a i n c u r r e n t (A )
F igure 7. T rans conductance V ariation
with Drain C urrent
I DS , Drain-S ource C urrent (A)F igure 9. G ate C harge
Qg, Total G ate C harge (nC )
F igure 10. Maximum S afe Operating Area
V DS , Drain-S ource Voltage (V)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
V S D , B ody Diode F orward Voltage (V)
T j, J unction T emperature ( C )T j, J unction T emperature ( C )
I D , D r a i n C u r r e n t (A )
4
20.0
10.0
1.00.4
0.6
0.8
1.0
1.2
1.4
1.091.061.031.000.970.940.91
20151050
10.1
1
10
30
50
10864200
3
6
9
1215
18
2124
S T M9410
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
V V GS
OUT
t V V t t d(on)OUT
IN
on
r
10%
t d(off)
90%
10%
10%
50%
50%
90%t off
t f
90%
PULSE WIDTH
T r a n s i e n t T h e r m a l I m p e d a n c e
2
1
0.1
0.01
Square Wave Pulse Duration (sec)
Figure 13. Normalized Thermal Transient Impedance Curve
r (t ),N o r m a l i z e d E f f e c t i v e 5
INVERTED
10
10
10
10
110100
STM9410
STM9410
7