文档库 最新最全的文档下载
当前位置:文档库 › STM9410中文资料

STM9410中文资料

STM9410中文资料
STM9410中文资料

N-Channel Enhancement Mode Field Effect Transistor

Surface Mount Package.

ABSOLUTE MAXIMUM RATINGS (T A =25 C unless otherwise noted)

THERMAL CHARACTERISTICS

SamHop Microelectronics Corp.

FEATURES

Super high dense cell design for low R DS(ON ).

Rugged and reliable.OCT.29, 2004 V1.1

1

STM9410

STM9410

ELECTRICAL CHARACTERISTICS (T A 25 C unless otherwise noted)

=

Parameter

Symbol

Condition

Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (T A =25 C unless otherwise noted)

DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage

V SD

V GS = 0V, Is =1.7A

0.82 1.1

V

b

C

Notes

c.Guaranteed by design, not subject to production testing.

b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

Figure 4. On-Resistance Variation with Drain Current and Temperature Figure 3. Capacitance

V DS , Drain-to Source Voltage (V)V GS , Gate-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)I D , Drain Current(A)

I D , D r a i n C u r r e n t (A )

C , C a p a c i t a n c e (p F )

O n -R e s i s t a n c e (O h m s )

I D , D r a i n C u r r e n t (A )

a.Surface Mounted on FR4 Board, t 10sec.

3

R D S (O N ),10

8

6420

0.5

1

1.5

2

2.5

3

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.030

0.0250.020

0.0150.0100.005

5

10

15

20

25

30

STM9410

F igure 5.

G ate T hres hold V ariation

with T emperature

F igure 6. B reakdown V oltage V ariation

with T emperature

V t h , N o r m a l i z e d G a t e -S o u r c e T h r e s h o l d V o l t a g e

g F S , T r a n s c o n d u c t a n c e (S )

V G S , G a t e t o S o u r c e V o l t a g e (V )

B V D S S , N o r m a l i z e d D r a i n -S o u r c e B r e a k d o w n V o l t a g e

I s , S o u r c e -d r a i n c u r r e n t (A )

F igure 7. T rans conductance V ariation

with Drain C urrent

I DS , Drain-S ource C urrent (A)F igure 9. G ate C harge

Qg, Total G ate C harge (nC )

F igure 10. Maximum S afe Operating Area

V DS , Drain-S ource Voltage (V)

F igure 8. B ody Diode F orward V oltage

V ariation with S ource C urrent

V S D , B ody Diode F orward Voltage (V)

T j, J unction T emperature ( C )T j, J unction T emperature ( C )

I D , D r a i n C u r r e n t (A )

4

20.0

10.0

1.00.4

0.6

0.8

1.0

1.2

1.4

1.091.061.031.000.970.940.91

20151050

10.1

1

10

30

50

10864200

3

6

9

1215

18

2124

S T M9410

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

V V GS

OUT

t V V t t d(on)OUT

IN

on

r

10%

t d(off)

90%

10%

10%

50%

50%

90%t off

t f

90%

PULSE WIDTH

T r a n s i e n t T h e r m a l I m p e d a n c e

2

1

0.1

0.01

Square Wave Pulse Duration (sec)

Figure 13. Normalized Thermal Transient Impedance Curve

r (t ),N o r m a l i z e d E f f e c t i v e 5

INVERTED

10

10

10

10

110100

STM9410

STM9410

7

相关文档