1
N-Channel 30-V (D-S) MOSFET
FEATURES
?Halogen-free
?TrenchFET ? Power MOSFET ?100 % R g Tested ?100 % UIS Tested
APPLICATIONS
?Low-Side Switch ?Notebook DC/DC
PRODUCT SUMMARY
V DS (V)R DS(on) (Ω)I D (A)a Q g (Typ.)30
0.022 at V GS = 10 V 4013.8 nC
0.028 at V
GS = 4.5 V
40
Notes:
a.Based on T C = 25 °C. Package limited.
b.Surface Mounted on 1" x 1" FR4 board.
c.t = 10 s.
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol Limit Unit Drain-Source Voltage V DS 30
V
Gate-Source Voltage
V GS ± 20
Continuous Drain Current (T J = 150 °C)T C = 25 °C I
D
40a A
T C = 70 °C 40a
T A = 25 °C 22.7b, c
T A = 70 °C 19.7b, c
Pulsed Drain Current I DM 70Avalanche Current L = 0.1 mH
I AS 35
Avalanche Energy
E
AS 61
mJ Continuous Source-Drain Diode Current
T C = 25 °C I S
40
a A T A = 25 °C 4.1b, c Maximum Power Dissipation
T C
= 25 °C P D 50W
T C = 70 °C
32
T A = 25 °C 5b, c T A = 70 °C
3.2b, c
Operating Junction and Storage T emperature Range T J , T stg - 55 to 150
°C
Soldering Recommendations (Peak Temperature)
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typical Maximum
Unit Maximum Junction-to-Ambient t ≤ 10 s R thJA 2025°C/W
Maximum Junction-to-Case (Drain)Steady State
R thJC
2.0
2.5
TO-252
S G D Top V ie w
23553Q68872黄R1376032电5070
2
Notes:
a.Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b.Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.Max.Unit
Static
Drain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 μA
30
V V DS Temperature Coefficient ΔV DS /T J I D = 250 μA
27mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 5.5
Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 μA 13V Gate-Source Leakage
I GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 30 V , V GS = 0 V 1μA V DS = 30 V , V GS = 0 V , T J = 55 °C
5
On-State Drain Current a
I D(on)V DS ≥ 5 V, V GS = 10 V 50
A Drain-Source On-State Resistance a R DS(on)V GS = 10 V , I D = 20 A 0.0170.022ΩV GS = 4.5 V, I D = 18 A 0.0190.028
Forward T ransconductance a g fs
V DS = 15 V , I D = 20 A
90
S
Dynamic b
Input Capacitance C iss V DS = 15 V , V GS = 0 V, f = 1 MHz
1720pF
Output Capacitance
C oss 355Reverse Transfer Capacitance C rss 130Total Gate Charge Q g V DS = 15 V , V GS = 10 V , I
D = 20 A 2944nC V DS = 15 V , V GS = 4.5 V , I D = 20 A 13.821
Gate-Source Charge Q gs 5.0Gate-Drain Charge Q gd 4.6Gate Resistance R g f = 1 MHz
1.1
2.2Ω
Turn-On Delay Time t d(on) V DD = 15 V , R L = 15 Ω
I D ? 1.0 A, V GEN = 4.5 V, R g = 1 Ω
2540ns Rise Time
t r 1425Turn-Off Delay Time t d(off) 3045Fall Time
t f 1525Turn-On Delay Time t d(on) V DD = 15 V , R L = 15 Ω
I D ? 1.0 A, V GEN = 10 V , R g = 1 Ω1120Rise Time
t r 915Turn-Off Delay Time t d(off) 2740Fall Time
t f
9
15
Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C
40A Pulse Diode Forward Current I SM 70Body Diode Voltage
V SD I S = 4.1 A, V GS = 0 V
0.75 1.2V Body Diode Reverse Recovery Time t rr I F = 4.1 A, dI/dt = 100 A/μs, T J = 25 °C
2550ns Body Diode Reverse Recovery Charge Q rr 1735
nC Reverse Recovery Fall Time t a 13ns
Reverse Recovery Rise Time
t b
12
On-Resistance vs. Drain Current and Gate Voltage Capacitance
On-Resistance vs. Junction Temperature
3
Threshold Voltage
4
5
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
*The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Current Derating*
Power, Junction-to-Case Power, Junction-to-Ambient
TYPICAL CHARACTERISTICS 25°C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Case 6
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TO-252AA CASE OUTLINE
Note
?Dimension L3 is for reference only.
MILLIMETERS
INCHES
DIM.MIN.MAX.MIN.MAX.A 2.18 2.380.0860.094A1-0.127-0.005b 0.640.880.0250.035b2
0.76 1.140.0300.045b3 4.95 5.460.1950.215C 0.460.610.0180.024C2
0.460.890.0180.035D 5.97 6.220.2350.245D1 5.21-0.205-E 6.35 6.730.2500.265E1 4.32-0.170-H 9.40
10.41
0.370
0.410
e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.780.0550.070L30.89 1.270.0350.050L4- 1.02-0.040L5
1.14
1.520.045
0.060
ECN: X12-0247-Rev. M, 24-Dec-12DWG: 5347
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