KSP44/45
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T a =25°C unless otherwise noted
Electrical Characteristics T a =25°C unless otherwise noted
* Pulse Test: PW ≤300μs, Duty Cycle ≤2%
Symbol Parameter
Value Units V CBO Collector-Base Voltage
: KSP44 : KSP45
500400V V V CEO
Collector-Emitter Voltage
: KSP44 : KSP45
400350V V V EBO Emitter-Base Voltage 6V I C Collector Current
300mA P C Collector Power Dissipation (T a =25°C)625mW P C Collector Power Dissipation (T C =25°C) 1.5W T J
Junction Temperature
150
°C
T STG
Storage Temperature -55 ~ 150°C
Symbol Parameter
Test Condition
Min.Max.
Units BV CBO
Collector-Base Breakdown Voltage
: KSP44: KSP45I C =100μA, I B =0
500400
V V
BV CEO
* Collector -Emitter Breakdown Voltage
: KSP44: KSP45I C =1mA, I B =0
400350
V V BV EBO Emitter-Base Breakdown Voltage I E =100μA, I C =0
6V
I CBO
Collector Cut-off Current
: KSP44: KSP45
V CB =400V, I E =0V CB =320V, I E =0
0.10.1
μA μA I CES
Collector Cut-off Current
: KSP44: KSP45
V CE =400V, I B =0V CE =320V, I B =00.50.5μA μA I EBO Emitter Cut-off Current V EB =4V, I C =00.1μA
h FE
* DC Current Gain
V CE =10V, I C =1mA V CE =10V, I C =10mA V CE =10V, I C =50mA V CE =10V, I C =100mA 40504540
200
V CE (sat)
* Collector-Emitter Saturation Voltage
I C =1mA, I B =0.1mA I C =10mA, I B =1mA I C =50mA, I B =5mA 0.40.50.75V V V V BE (sat)* Base-Emitter Saturation Voltage I C =10mA, I B =1mA 0.75V C ob
Output Capacitance
V CB =20V, I E =0, f=1MHz
7
pF
KSP44/45
High Voltage Transistor
?Collector-Emitter Voltage: V CEO =KSP44: 400V
KSP45: 350V
?Collector Power Dissipation: P C (max)=625mW
1. Emitter
2. Base
3. Collector
TO-92
1
KSP44/45
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PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
No Identification Needed Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.
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