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KSP44BU中文资料

KSP44/45

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T a =25°C unless otherwise noted

Electrical Characteristics T a =25°C unless otherwise noted

* Pulse Test: PW ≤300μs, Duty Cycle ≤2%

Symbol Parameter

Value Units V CBO Collector-Base Voltage

: KSP44 : KSP45

500400V V V CEO

Collector-Emitter Voltage

: KSP44 : KSP45

400350V V V EBO Emitter-Base Voltage 6V I C Collector Current

300mA P C Collector Power Dissipation (T a =25°C)625mW P C Collector Power Dissipation (T C =25°C) 1.5W T J

Junction Temperature

150

°C

T STG

Storage Temperature -55 ~ 150°C

Symbol Parameter

Test Condition

Min.Max.

Units BV CBO

Collector-Base Breakdown Voltage

: KSP44: KSP45I C =100μA, I B =0

500400

V V

BV CEO

* Collector -Emitter Breakdown Voltage

: KSP44: KSP45I C =1mA, I B =0

400350

V V BV EBO Emitter-Base Breakdown Voltage I E =100μA, I C =0

6V

I CBO

Collector Cut-off Current

: KSP44: KSP45

V CB =400V, I E =0V CB =320V, I E =0

0.10.1

μA μA I CES

Collector Cut-off Current

: KSP44: KSP45

V CE =400V, I B =0V CE =320V, I B =00.50.5μA μA I EBO Emitter Cut-off Current V EB =4V, I C =00.1μA

h FE

* DC Current Gain

V CE =10V, I C =1mA V CE =10V, I C =10mA V CE =10V, I C =50mA V CE =10V, I C =100mA 40504540

200

V CE (sat)

* Collector-Emitter Saturation Voltage

I C =1mA, I B =0.1mA I C =10mA, I B =1mA I C =50mA, I B =5mA 0.40.50.75V V V V BE (sat)* Base-Emitter Saturation Voltage I C =10mA, I B =1mA 0.75V C ob

Output Capacitance

V CB =20V, I E =0, f=1MHz

7

pF

KSP44/45

High Voltage Transistor

?Collector-Emitter Voltage: V CEO =KSP44: 400V

KSP45: 350V

?Collector Power Dissipation: P C (max)=625mW

1. Emitter

2. Base

3. Collector

TO-92

1

KSP44BU中文资料

KSP44BU中文资料

KSP44BU中文资料

KSP44/45

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

No Identification Needed Full Production

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

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