V RRM = 20 V - 100 V I F = 120 A
Features
? High Surge Capability D-67 Package
? Types up to 100 V V RRM
Parameter
Symbol MBRH12020 (R)MBRH12030 (R)Unit Repetitive peak reverse MBRH12040 (R)
MBRH12035 (R)Maximum ratings, at T j = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power Schottky Diode
Conditions
voltage
V RRM 2030V RMS reverse voltage V RMS 1421V DC blocking voltage
V DC 2030V Continuous forward current I F
120120A Operating temperature T j -40 to 175-40 to 175°C Storage temperature
T stg
-40 to 175
-40 to 175
°C
Parameter
Symbol
MBRH12020 (R)MBRH12030 (R)Unit Diode forward voltage 0.650.6544250
250
Thermal characteristics
Thermal resistance, junction - case
R thJC
0.8
0.8
°C/W
250
A 2000Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward current, Half Sine Wave I F,SM Reverse current
I R
V F V R = 20 V, T j = 25 °C I F = 120 A, T j = 25 °C T C ≤ 136 °C Conditions 352520002000-40 to 175
1201202000-40 to 175
MBRH12040 (R)
44MBRH12035 (R)0.8
V R = 20 V, T j = 125 °C
0.8
0.650.65250
mA
V -40 to 175-40 to 175T C = 25 °C, t p = 8.3 ms 40284035