STA353中文资料

STA353 S e m i c o n d u c t o r

PNP Silicon Transistor Descriptions

? High current application

? Audio power amplifier

Features

? High current : I C = -2A

? Complementary pair with STC352

Ordering Information

Type NO. Marking Package Code

STA353 STA353 MPT

Outline Dimensions unit : mm

Absolute maximum ratings (Ta=25°C)

Characteristic Symbol Rating Unit

Collector-Base voltage V CBO -40 V Collector-Emitter voltage V CEO -30 V Emitter-Base voltage V EBO -5 V

Collector current I C -2 A

Emitter Current

I E 2 A P C ( Tc=25℃) 10

Collector Power dissipation P C ( Ta=25℃) 1.2 W Junction temperature T j 150 °C Storage temperature T stg -55~150 °C

Electrical Characteristics (Ta=25°C)

Characteristic Symbol

Test Condition Min. Typ. Max.Unit

Collector-Base breakdown voltage BV CBO I C =-100μA, I E =0

-40 - - V

Collector-Emitter breakdown voltage BV CEO I C =-10mA, I B =

0 -30 - - V Emitter-Base breakdown voltage BV EBO I E =-1mA, I C =0 -5 - - V

Collector cut-off current I CBO V CB =-40V , I E =

0 - - -0.1 μA Emitter cut-off current I EBO V EB =-5V , I C =0 - - -0.1 μA DC current gain

h FE * V CE =-2V , I C =-500mA 100 - 320 - Base-Emitter on voltage

V BE(ON) V CE =-2V , I C =

-500mA - - -1 V V CE(sat)1 I C =-2A, I B =-0.2A - - -0.8

Collector-Emitter saturation voltage V CE(sat)2 I C =-1.5A, I B =

-0.03A - - -2 V

Transition frequency

f T V CE =-5V , I C =

-500mA - 120 - MHz

Collector output capacitance

C ob

V CB =-10V , I E =0, f=1MHz

-

48

-

pF

* : h FE rank / O : 100~200, Y : 160~320

Electrical Characteristic Curves

Fig. 4 C Ob - V R

Fig. 3 f T - I C

Fig. 7 Safe Operating Area Fig. 8 P

- T C

C