WF8M32-100G4DM5中文资料
White Electronic Designs
WF8M32-XG4DX5
ADVANCED*
8Mx32 5V FLASH MODULE
FEATURES
Access Time of 100, 120, 150ns Packaging:
? 68 Lead, 40 mm (1.560") square hermetic CQFP , 5.2 mm (0.205") high (Package 503) Sector Architecture
? 32 equal size sectors of 64KBytes per each 2Mx8
chip ? Any combination of sectors can be erased. Also supports full chip erase. 100,000 Write/Erase Cycles Minimum Organized as 8Mx32
Commercial, I
ndustrial, and Military Temperature
Ranges 5 Volt Read and Write. 5V ± 10% Supply. Low Power CMOS
Data# Polling and Toggle Bit feature for detection of
program or erase cycle completion. Supports reading or programming data to a sector
not being erased. RESET# pin resets internal state machine to the
read mode. (Not available in HIP package for WF2M32-XHX5) Built-in Decoupling Caps and Multiple Ground Pins
for Low Noise Operation, Seperate Power and Ground Planes to improve noise immunity. Built in Buffering.
* T his product is under development, is not quali? ed or characterized and is subject to change or cancellation without notice.
Note: For programming information refer to Flash Programming 16M5 Application Note.
White Electronic Designs
WF8M32-XG4DX5
ADVANCED
CAPACITANCE
T A = +25°C
Parameter
Symbol Conditions Max
Unit
OE# capacitance C OE V IN = 0 V, f = 1.0 MHz 20pF WE# capacitance C WE V IN = 0 V, f = 1.0 MHz 20pF CS1-4# capacitance C CS V IN = 0 V, f = 1.0 MHz 20pF Data I/O capacitance C I/O V I/O = 0 V, f = 1.0 MHz 60pF Address input capacitance C AD V IN = 0 V, f = 1.0 MHz 20pF RESET# capacitance C RST
V IN = 0 V, f = 1.0 MHz 20
pF
This parameter is guaranteed by design but not tested.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Ratings Unit Voltage on Any Pin Relative to V SS V T -2.0 to +7.0
V Power Dissipation P T 8W Storage Temperature
T STG -65 to +125°C Short Circuit Output Current I OS
100mA Endurance - Write/Erase Cycles (Mil Temp)
100,000 min
cycles Data Retention (Mil Temp)
20
years
RECOMMENDED DC OPERATING CONDITIONS
Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5V Ground V SS 000V Input High Voltage V IH 2.0—V CC + 0.5V Input Low Voltage V IL
-0.5
—+0.8V Operating Temperature (Mil.)T A -55—+125°C Operating Temperature (Ind.)
T A -40
—
+85
°C
DC CHARACTERISTICS – CMOS COMPATIBLE
V CC = 5.0V, GND = 0V, -55°C ≤ T A ≤ +125°C
Parameter
Symbol Conditions
Min
Max Unit Input Leakage Current I LI V CC = 5.5, V IN = GND to V CC 10μA Output Leakage Current
I LOx32V CC = 5.5, V IN = GND to V CC 10μA V CC Active Current for Read (1)
I CC1CS# = V IL , OE# = V IH , f = 5MHz 640mA V CC Active Current for Program or Erase (2) I CC2CS# = V IL , OE# = V IH
960mA V CC Standby Current I CC3V CC = 5.5, CS# = V IH , f = 5MHz, RESET# = V CC ± 0.3V 160mA Output Low Voltage V OL I OL = 12.0 mA, V CC = 4.50.45V Output High Voltage
V OH I OH = -2.5 mA, V CC = 4.5
0.85 x V CC
V Low V CC Lock-Out Voltage
V LKO
3.2
4.2
V
Notes:
1. The Icc current listed includes both the DC operating current and the frequency dependent component (@ 5MHz).
The frequency component typically is less than 2mA/MHz, with OE# at V IH .2. I CC active while Embedded Algorithm (program or erase) is in progress.3. DC test conditions V IL = 0.3V, V IH = V CC - 0.3V
White Electronic Designs WF8M32-XG4DX5
ADVANCED AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED
V CC = 5.0V, -55°C ≤ T A ≤ +125°C
Parameter Symbol-100-120-150Unit
Min Max Min Max Min Max
Write Cycle Time t AVAV t WC100120150ns Chip Select Setup Time t ELWL t CS000ns Write Enable Pulse Width t WLWH t WP505050ns Address Setup Time t AVWL t AS000ns Data Setup Time t DVWH t DS505050ns Data Hold Time t WHDX t DH000ns Address Hold Time t WLAX t AH505050ns Write Enable Pulse Width High t WHWL t WPH202020ns Duration of Byte Programming Operation (1)t WHWH1300300300μs Sector Erase (2)t WHWH2151515sec Read Recovery Time before Write t GH W L000μs
V CC Setup Time t VCS505050μs Chip Programming Time444444sec Chip Erase Time (3)256256256ns Output Enable Hold Time (4) t OEH101010ns RESET# Pulse Width t RP500500500ns NOTES:
1. Typical value for t WHWH1 is 7μs.
2. Typical value for t WHWH2 is 1sec.
3. Typical value for Chip Erase Time is 32sec.
4. For Toggle and Data Polling.
AC CHARACTERISTICS – READ-ONLY OPERATIONS
V CC = 5.0V, -55°C ≤ T A ≤ +125°C
Parameter Symbol-100-120-150Unit
Min Max Min Max Min Max
Read Cycle Time t AVAV t RC100120150ns Address Access Time t AVQV t ACC100120150ns Chip Select Access Time t ELQV t CE100120150ns Output Enable to Output Valid t GLQV t OE505055ns Chip Select High to Output High Z (1)t EHQZ t DF303035ns Output Enable High to Output High Z (1)t GHQZ t DF303035ns Output Hold from Addresses, CS# or OE#
t AXQX t OH000ns Change, whichever is First
RST Low to Read Mode (1)tReady202020μs
1. Guaranteed by design, not tested.
White Electronic Designs WF8M32-XG4DX5
ADVANCED AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
V CC = 3.3V, V SS = 0V, -55°C ≤ T A ≤ +125°C
FIGURE 3 – RESET TIMING DIAGRAM
White Electronic Designs WF8M32-XG4DX5
ADVANCED FIGURE 4 – AC WAVEFORMS FOR READ OPERATIONS
White Electronic Designs WF8M32-XG4DX5
ADVANCED WRITE/ERASE/PROGRAM OPERATION, WE# CONTROLLED
White Electronic Designs WF8M32-XG4DX5
ADVANCED AC WAVEFORMS CHIP/SECTOR ERASE OPERATIONS
White Electronic Designs WF8M32-XG4DX5
ADVANCED AC WAVEFORMS FOR DATA# POLLING DURING EMBEDDED ALGORITHM OPERATIONS
White Electronic Designs WF8M32-XG4DX5
ADVANCED ALTERNATE CS# CONTROLLED PROGRAMMING OPERATION TIMINGS
White Electronic Designs WF8M32-XG4DX5
ADVANCED PACKAGE 503: 68 LEAD, CERAMIC QUAD FLAT PACK DUAL CAVITY, CQFP (G4D)