NTA4153N中文资料

NTA4153N, NTE4153N Small Signal MOSFET

20 V, 915 mA, Single N?Channel

with ESD Protection, SC?75 and SC?89

Features

?Low R DS(on) Improving System Efficiency ?Low Threshold V oltage, 1.5 V Rated ?ESD Protected Gate

?Pb?Free Packages are Available

Applications

?Load/Power Switches

?Power Supply Converter Circuits ?Battery Management

?

Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.

MAXIMUM RATINGS (T J = 25°C unless otherwise stated)

Parameter

Symbol Value Units Drain?to?Source Voltage V DSS 20V Gate?to?Source Voltage V GS ±6.0V Continuous Drain Current (Note 1)Steady State

T A

= 25°C I D

915mA

T A = 85°C 660

Power Dissipation (Note 1)

Steady State P D 300mW Pulsed Drain Current

t p =10 m s

I DM 1.3A

Operating Junction and Storage Temperature T J ,T STG ?55 to 150°C

Continuous Source Current (Body Diode)I S 280mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s)

T L

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol Value Units Junction?to?Ambient ? Steady State (Note 1)

SC?75 / SOT?416

SC?89

R q JA

416400

°C/W

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

1.Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

Top View

https://www.wendangku.net/doc/639968924.html,

R DS(on) TYP I D MAX

V (BR)DSS

0.127 W @ 4.5 V

20 V

0.170 W @ 2.5 V 915 mA 0.242 W @ 1.8 V See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

0.500 W @ 1.5 V

ELECTRICAL CHARACTERISTICS (T J = 25°C unless otherwise stated)

Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS

Drain?to?Source Breakdown Voltage V(BR)DSS V GS= 0 V, I D= 250 m A2026V Drain?to?Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/T J18.4mV/°C Zero Gate Voltage Drain Current I DSS V GS= 0 V, V DS= 16V100nA Gate?to?Source Leakage Current I GSS V DS= 0 V, V GS= ±4.5 V±1.0m A ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage V GS(TH)V GS= V DS, I D = 250 m A0.450.76V Negative Threshold Temperature

Coefficient

V GS(TH)/T J?2.15mV/°C Drain?to?Source On Resistance R DS(on)V GS= 4.5V, I D= 600 mA127230m W

V GS= 2.5V, I D= 500 mA170275

V GS = 1.8V, I D= 350 mA242700

V GS = 1.5V, I D= 40 mA5009500

Forward Transconductance g FS V DS= 10V, I D= 400 mA 1.4S CHARGES AND CAPACITANCES

Input Capacitance C ISS

V GS= 0 V, f = 1.0 MHz,

V DS= 16V 110pF

Output Capacitance C OSS16 Reverse Transfer Capacitance C RSS12

Total Gate Charge Q G(TOT)

V GS= 4.5 V, V DS= 10V,

I D= 0.2 A 1.82nC

Threshold Gate Charge Q G(TH)0.2 Gate?to?Source Charge Q GS0.3 Gate?to?Drain Charge Q GD0.42 SWITCHING CHARACTERISTICS (Note 3)

Turn?On Delay Time t d(ON)

V GS= 4.5V, V DD= 10V,

I D= 0.2 A, R G= 10 W 3.7ns

Rise Time t r 4.4 Turn?Off Delay Time t d(OFF)25 Fall Time t f7.6 DRAIN?SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage V SD V

GS= 0 V,

I S= 200 mA

T J= 25°C0.67 1.1V T J= 125°C0.54

2.Pulse Test: pulse width ≤ 300m s, duty cycle ≤ 2%.

3.Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION

Device Marking

(XX)Package Shipping?

NTA4153NT1TR SC?75 / SOT?4163000/Tape & Reel

NTA4153NT1G TR SC?75 / SOT?416

(Pb?Free)

3000/Tape & Reel

NTE4153NT1G TP SC?89

(Pb?Free)

3000/Tape & Reel

?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (W )

Figure 5. On?Resistance Variation with

Temperature

T J , JUNCTION TEMPERATURE (°C)

R D S (o n ), D R A I N ?T O ?S O U R C E R E S I S T A N C E (N O R M A L I Z E D )

Figure 6. Capacitance Variation

DRAIN?TO?SOURCE VOLTAGE (VOLTS)

I D , D R A I N C U R R E N T (A M P S )

V SD , SOURCE?TO?DRAIN VOLTAGE (VOLTS)

I S , S O U R C E C U R R E N T (A M P S )

1.6Q G , TOTAL GATE CHARGE (nC)

V G S , G A T E ?T O ?S O U R C E V O L T A G E (V O L T S )

1.20.4Figure 7. Gate?to?Source Voltage vs. Total

Gate Charge

0.8

2.0

Figure 8. Diode Forward Voltage vs. Current

0.001

0.01

0.1

1.0

r (t ), N O R M A L I Z E D T R A N S I E N T T H E R M A L R E S I S T A N C E

t, TIME (s)

Figure 9. Normalized Thermal Response

SC?75/SOT?416 CASE 463?01

ISSUE F

ǒmm inches ǔ

SCALE 10:1

*For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

SC?89CASE 463C?03

ISSUE C

DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

CONTROLLING DIMENSION: MILLIMETERS MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

463C?01 OBSOLETE, NEW STANDARD 463C?02.

DIM A MIN NOM MIN NOM INCHES

1.50 1.60 1.700.059MILLIMETERS B 0.750.850.950.030C 0.600.700.800.024D 0.230.280.33

0.009

G 0.50 BSC H 0.53 REF J 0.100.150.200.004K 0.300.400.50

0.012L 1.10 REF M ??????10 ???N ??????10 ???S

1.50 1.60 1.70

0.0590.0630.0670.0340.0400.0280.0310.0110.0130.020 BSC 0.021 REF

0.0060.0080.0160.020

0.043 REF ???10 ???10 0.0630.067MAX MAX ____ǒmm inches

ǔSCALE 10:1

*For additional information on our Pb?Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION