RN2110FV中文资料
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2110FV,RN2111FV
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
With built-in bias resistors Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1110FV, RN1111FV
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit Collector-base voltage V CBO ?50 V Collector-emitter voltage V CEO ?50 V Emitter-base voltage V EBO ?5 V Collector current
I C
?100 mA
Collector power dissipation P C (Note) 150 mW
Junction temperature T j 150 °C Storage τεμπερατυρε range
T stg
?55~150 °C
Note : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt )
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition
Min Typ. Max
Unit
Collector cut-off current I CBO ― V CB = ?50V, I E = 0 ― ― ?100 nA Emitter cut-off current I EBO ― V EB = ?5V, I C = 0
―
―
?100 nA
DC current gain
h FE ― V CE = ?5V, I C = ?1mA 120 ― 400 Collector-emitter saturation voltage V CE (sat) ― I C = ?5mA, I B = ?0.25mA ― ?0.1 ?0.3 V Transition frequency f T ― V CE = ?10V, I C = ?5mA ― 200 ― MH z Collector output capacitance C ob ― V CB = ?10V, I E = 0, f = 1MH z
― 3
―
pF
RN2110FV 3.29 4.7 6.11
Input resistor
RN2111FV
R1
―
―
7
10 13
k ?
RN2110FV
(m A )
RN2110FV
(μA )
RN2111FV
(m A )
RN2111FV
(μA )
RN2110FV
COLLCTER CURRENT IC (mA)
D C C U R R
E N T G A I N h
F E
RN2110FV
COLLCTER CURRENT IC (mA)
C O L L E C T O R E M I T T E R S A T U R A T I O N V O L T A G E V C E (s a t ) (V )
RN2111FV
COLLCTER CURRENT IC (mA)
D C C U R R
E N T G A I N h
F E
RN2111FV
COLLCTER CURRENT IC (mA)
C O L L E C T O R E M I T T E R S A T U R A T I O N V O L T A G E V C E (s a t ) (V )
Type Name Marking
RN2110FV
RN2111FV
? The information contained herein is subject to change without notice.
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030619EAA
RESTRICTIONS ON PRODUCT USE