AP9578GH
Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp.POWER MOSFET
▼ Lower On-resistance BV DSS-60V
▼
Simple Drive Requirement R DS(ON)160mΩ▼ Fast Switching Characteristic I D-10A
▼ RoHS Compliant
Description
Absolute Maximum Ratings
Symbol Units
V DS V
V GS V
I D@T C=25℃A
I D@T C=100℃A
I DM A
P D@T C=25℃W
W/℃
T STG℃
T J℃
Symbol Value Units Rthj-c Thermal Resistance Junction-case Max. 4.5℃/W Rthj-a Thermal Resistance Junction-ambient Max.110℃/W
Data and specifications subject to change without notice200510051-1/4
AP9578GH/J
Rating
-60
±25
-10
0.23
Continuous Drain Current, V GS @ 10V-6
Pulsed Drain Current145
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Pb Free Plating Product
-55 to 150
Linear Derating Factor
28
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V GS @ 10V
G D
S TO-252(H)
G
D
S TO-251(J) The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9578GJ) is available for low-profile applications.
AP9578GH/J
Electrical Characteristics@T j=25o C(unless otherwise specified) Symbol Parameter Test Conditions Min.Typ.
Max.Units
BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=-250uA-60--V ΔB V DSS/ΔT j Breakdown Voltage Temperature Coefficient Reference to 25℃, I D=-1mA--0.06-V/℃R DS(ON)Static Drain-Source On-Resistance2V GS=-10V, I D=-5A--160mΩ
V GS=-4.5V, I D=-3A--200mΩV GS(th)Gate Threshold Voltage V DS=V GS, I D=-250uA-1--3V g fs Forward Transconductance V DS=-10V, I D=-5A-6-S I DSS Drain-Source Leakage Current (T
j
=25o C)V DS=-60V, V GS=0V---10uA Drain-Source Leakage Current (T j=150o C)V DS=-48V, V GS=0V---25uA
I GSS Gate-Source Leakage V
GS
=±25V--nA Q g Total Gate Charge2I D=-5A-1016nC Q gs Gate-Source Charge V DS=-48V-2-nC Q gd Gate-Drain ("Miller") Charge V GS=-4.5V-4-nC t d(on)Turn-on Delay Time2V DS=-30V-10-ns t r Rise Time I D=-5A-13-ns t d(off)Turn-off Delay Time R G=3.3Ω,V GS=-10V-34-ns t f Fall Time R D=6Ω-29-ns C iss Input Capacitance V GS=0V-7601220pF C oss Output Capacitance V DS=-25V-80-pF C rss Reverse Transfer Capacitance f=1.0MHz-60-pF Source-Drain Diode
Symbol Parameter Test Conditions Min.Typ.Max.Units V SD Forward On Voltage2I S=-5A, V GS=0V---1.2V t rr Reverse Recovery Time2I S=-5A, V GS=0V,-45-ns Q rr Reverse Recovery Charge dI/dt=-100A/μs-107-nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
±100
AP9578GH/J
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
AP9578GH/J