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DMN65D8LW-7;中文规格书,Datasheet资料

N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V (BR)DSS

R DS(ON) Package

I D

T A = +25°C 60V

3? @ V GS = 10V

SOT323

300mA

4? @ V GS = 5V

260mA

Description

This new generation MOSFET has been designed to minimize the on-state resistance (R DS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management applications.

Applications

? DC-DC Converters ? Power Management Functions ? Battery Operated Systems and Solid-State Relays ? Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc

Features

? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Small Surface Mount Package ? ESD Protected Gate, 1KV (HBM) ? Lead-Free Finish; RoHS Compliant (Notes 1 & 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

? Case: SOT323 ? Case Material: Molded Plastic. UL Flammability Classification

Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208 ? Terminal Connections: See Diagram ? Weight: 0.006 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging DMN65D8LW -7

SOT323 3000/Tape & Reel

Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.

2. See https://www.wendangku.net/doc/6016959821.html, for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.

4. For packaging details, go to our website at https://www.wendangku.net/doc/6016959821.html,.

Marking Information

Date Code Key

Year 2011 2012 2013 2014 2015 2016 2017

Code Y Z A B C D E

Month Jan Feb Mar Apr

May Jun Jul Aug Sep

Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View Pin Configuration

Equivalent Circuit

ESD PROTECTED TO 1kV SOT323Top View MM3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) MM3Y M

Maximum Ratings(@T A = +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units Drain-Source Voltage V DSS60 V

Gate-Source Voltage V GSS±20 V

Continuous Drain Current (Note 6) V GS = 10V Steady

State

T A = +25°C

T A = +70°C

I D

300

230

Continuous Drain Current (Note 6) V GS = 5V Steady

State

T A = +25°C

T A = +70°C

I D

260

210

Pulsed Drain Current (10μs pulse, duty cycle = 1%) I DM800 mA

Maximum Body Diode Continuous Current (Note 6) I S 1 A

Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P D

300

mW (Note 6) 432

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

398

°C/W (Note 6) 290

Thermal Resistance, Junction to Case (Note 5) RθJC142

Operating and Storage Temperature Range T J, T STG-55 to +150 °C

Electrical Characteristics(@T A = +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BV DSS60 ??V V GS = 0V,I D = 250μA

Zero Gate Voltage Drain Current I DSS?? 1.0 μA V DS = 60V,V GS = 0V

Gate-Body Leakage I GSS??±5.0 μA V GS =±20V,V DS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage V GS(th) 1.2 ? 2.0 V V DS = V GS,I D = 250μA

Static Drain-Source On-Resistance R DS (ON)? 2 3 ΩV GS = 10V,I D =0.115A ? 2.5 4 Ω V GS = 5V,I D =0.115A

Forward Transconductance g FS80 290 ?mS V DS = 10V,I D =0.115A

Diode Forward Voltage V SD- 0.8 1.2V V GS = 0V, I S = 115mA DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance C iss?22.0 ?

pF V DS = 25V,V GS = 0V,f = 1.0MHz Output Capacitance C oss? 3.2 ?

Reverse Transfer Capacitance C rss? 2.0 ?

Gate Resistance R G? 79.9 ? ΩV DS = 0V, V GS = 0V, f = 1.0MHz Total Gate Charge V GS = 10V Q g?0.87 ?

nC V GS = 10V, V DS = 30V, I D = 150mA

Total Gate Charge V GS = 4.5V Q g? 0.43 ? Gate-Source Charge Q gs?0.11 ?Gate-Drain Charge Q gd?0.11 ?Turn-On Delay Time t D(on)? 2.7 ?

nS V DD = 30V, I D = 0.115A,V GEN = 10V, R GEN = 25Ω

Turn-On Rise Time t r? 2.8 ?Turn-Off Delay Time t D(off)? 12.6 ? Turn-Off Fall Time t f? 7.3 ?

Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

V , DRAIN-SOURCE VOLTAGE (V)Figure 1 Typical Output Characteristic

DS I , D R A I N C U R R E N T (A )

V , GATE-SOURCE VOLTAGE GS Figure 2 Typical Transfer Characteristics

I , D R A I N C U R R E N T (A )

I , DRAIN CURRENT

D Figure 3 Typical On-Resistance vs. Drain Current and T emperature

R , D R A I N -S O U R C E O N -R E S I S T A N C E ()

D S (O N )

ΩT , JUNCTION TEMPERATURE (C)

Figure 4 On-Resistance Variation with Temperature J °R , D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )

D S (O N

)

-T , JUNCTION TEMPERATURE (C)

Figure 5 On-Resistance Variation with T emperature

J °R , D R A I N -S O U R C E O N -R E S I S T A N C E ()

D S (O N )ΩT , JUNCTION TEMPERATUR

E (C)

Figure 6 Gate Threshold Variation vs. Ambient Temperature J °V , G A T E T H R E S H O L D V O L T A G E (V )

G S (t h )

V , SOURCE-DRAIN VOLTAGE (V)SD Figure 7 Diode Forward Voltage vs. Current I , S O U R C E C U R R E N T (V )

V , DRAIN-SOURCE VOLTAGE (V)

DS Figure 8 Typical Drain-Source Leakage Current vs. Voltage

I , D R A I N L E A K A G E C U R R E N T (n A )

D S S

V , DRAIN-SOURCE VOLTAGE (V)DS Figure 9 Typical Junction Capacitance

C , J U N C T I O N C A P A C I T A N C E (p F )

Q (nC)

g , TOTAL GATE CHARGE Figure 10 Gate Charge

V G A T E T H R E S H O L D V O L T A G E

(V )

G S

Package Outline Dimensions

SOT323

Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D - - 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11

0° 8° - All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at https://www.wendangku.net/doc/6016959821.html,/datasheets/ap02001.pdf for the latest version.

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

https://www.wendangku.net/doc/6016959821.html,

Dimensions Value (in mm)

Z 2.8 X 0.7 Y 0.9

1.9

1.0

X E

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DMN65D8LW-7