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BUK9880-55A中文资料

BUK9880-55A

TrenchMOS? logic level FET

Rev. 01 — 07 February 2001Product speci?cation

c c

M3D087

1.Description

N-channel enhancement mode ?eld-effect power transistor in a plastic package using TrenchMOS?1 technology, featuring very low on-state resistance.Product availability:

BUK9880-55A in SOT223 (SC-73).

2.Features

s TrenchMOS? technology s Q101 compliant s 150°C rated

Logic level compatible.

3.Applications

s Automotive and general purpose power switching:

x 12V and 24V loads

x Motors, lamps and solenoids.

4.Pinning information

1.TrenchMOS is a trademark of Royal Philips Electronics.

Table 1:Pinning - SOT223 (SC-73), simpli?ed outline and symbol

Pin Description Simpli?ed outline Symbol

1gate (g)

SOT223 (SC-73)

2drain (d)3source (s)4

drain (d)

MSB002 - 1

Top view

MBB076

5.Quick reference data

6.Limiting values

Table 2:Quick reference data

Symbol Parameter

Conditions

Typ Max Unit V DS drain-source voltage (DC)?55V I D drain current (DC)T sp =25°C; V GS =5V ?7A P tot total power dissipation T sp =25°C

?8W T j junction temperature

?150°C

R DSon

drain-source on-state resistance

V GS =5V; I D =8A;T j =25°C 6880m ?V GS =4.5V; I D =8A;T j =25°C ?89m ?V GS =10V; I D = 8A;T j =25°C

m ?

Table 3:Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions

Min Max Unit V DS drain-source voltage (DC)?55V V DGR drain-gate voltage (DC) R GS =20k ??55V V GS gate-source voltage (DC)?±10V V GSM non-repetitive gate-source voltage t p ≤50μs

?±15V I D drain current (DC)T sp =25°C; V GS =5V;Figure 2and 3?7A T sp =100°C; V GS =5V;Figure 2?4A I DM peak drain current T sp =25°C; pulsed t p ≤10μs;Figure 3

?30A P tot total power dissipation T sp =25°C;Figure 1?8W T stg storage temperature

?55+150°C T j operating junction temperature ?55+150°C Source-drain diode

I DR reverse drain current (DC)T sp =25°C

?7A I DRM pulsed reverse drain current T sp =25°C; pulsed; t p ≤10μs ?30A Avalanche ruggedness

W DSS

non-repetitive avalanche energy

unclamped inductive load; I D =6A;V DS ≤55V; V GS =5V; R GS =50?;starting T sp =25°C ?

V GS ≥4.5V

Fig 1.Normalized total power dissipation as a

function of solder point temperature.

Fig 2.Normalized continuous drain current as a

function of solder point temperature.

T amb =25°C; I DM is single pulse.

Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03aa17

020

100

1200

100

125

150175

P der T sp

(o C)

(%)03aa25

100

1200

100

125

150175I der T sp (o C)

(%)

P der P tot

P tot 25C °

()

----------------------100%

×=I der I D

I D 25C °

()

------------------100%

×=03nc54

10-2

10-1

102

10310-1

1 10

102

V DS (V)I D (A) D.C.

100 ms

10 ms R DSon = V DS / I D

1 ms

t p = 10 us 100 us t p

t p T

δ =

7.Thermal characteristics

7.1Transient thermal impedance

Table 4:Thermal characteristics Symbol Parameter

Conditions Value Unit R th(j-a)thermal resistance from junction to ambient Figure 4

70K/W R th(j-sp)

thermal resistance from junction to solder point

K/W

Fig 4.Transient thermal impedance from junction to solder point as a function of pulse duration.

03nc55

Single Shot

0.2

0.10.050.02

10-2

10-1

10210-6

10-5

10-4

10-3

10-2

10-1

10 102

t p

(s)Z th(j-sp) (K/W)δ = 0.5

t p

t p T

δ =

8.Characteristics

Table 5:Characteristics

T j=25°C unless otherwise speci?ed

Symbol Parameter Conditions Min Typ Max Unit Static characteristics

V(BR)DSS drain-source breakdown

voltage I D=0.25mA; V GS=0V

T j=25°C55??V T j=?55°C50??V

V GS(th)gate-source threshold voltage I D=1mA; V DS=V GS;

Figure9

T j=25°C1 1.52V

T j=150°C0.6??V

T j=?55°C?? 2.3V I DSS drain-source leakage current V DS=55V; V GS=0V

T j=25°C?0.0510μA

T j=150°C??500μA I GSS gate-source leakage current V GS=±10V; V DS=0V?2100nA

R DSon drain-source on-state

resistance V GS=5V; I D=8A;

Figure7and8

T j=25°C?6880m?T j=150°C??147m?V GS=4.5V; I D=8A;89m?V GS=10V; I D=8A;6273m?

Dynamic characteristics

C iss input capacitance V GS=0V; V DS=25V;

f=1MHz;Figure12?438584pF

C oss output capacitance?87104pF C rss reverse transfer capacitance?6285pF

t d(on)turn-on delay time V DD=30V; R L=1.2?;

V GS=5V; R G=10??8?ns

t r rise time?118?ns t d(off)turn-off delay time?20?ns t f fall time?32?ns

Source-drain diode

V SD source-drain (diode forward)voltage

I S =15A; V GS =0V;Figure 15

?0.85 1.2V t rr reverse recovery time I S =20A;dI S /dt =?100A/μs V GS =?10V; V DS =30V

?33?ns Q r

recovered charge

Table 5:Characteristics …continued T j =25°C unless otherwise speci?ed Symbol Parameter

Conditions Min Typ Max Unit T j =25°C T j =25°C; I D =10A

Fig 5.Output characteristics: drain current as a

function of drain-source voltage;typical values.Fig 6.Drain-source on-state resistance as a function

of gate-source voltage; typical values.

T j =25°C

Fig 7.Drain-source on-state resistance as a function

of drain current; typical values.Fig 8.Normalized drain-source on-state resistance

factor as a function of junction temperature.

03nc51

010

600

V DS (V)

I D (A)V GS (V) = 2.2

67803nc50

802

V GS (V)

R DSon (m ?)

03nc52

020406080100120140160

1800

4050

I D

(A)R DSon (m ?)V GS (V) =45

3.8

3.63.43.23

03nc24

00.20.40.60.811.2

1.41.61.82

2.2-60

-202060100

140180T j (o C)

a a R DSon

R DSon 25C °()

---------------------------=

I D =1mA; V DS =V GS T j =25°C; V DS =V GS

Fig 9.Gate-source threshold voltage as a function of

junction temperature.

Fig 10.Sub-threshold drain current as a function of

gate-source voltage.

T j =25°C; V DS =25V V GS =0V; f =1MHz

Fig 11.Forward transconductance as a function of

drain current; typical values.

Fig 12.Input,output and reverse transfer capacitances

as a function of drain-source voltage; typical values.

03aa33

00.5

1.5

2.5-60

-20

100

140180max

typ

min

V GS(th)T j (o C)

(V)

03aa36

0.5

1.5

2.53

max

typ min

I D V GS (V)

10-6

10-5

10-4

10-3

10-2

10-1(A)03nc48

120

1520

I D

(A)g fs (S)03nc53

200

400

600

800

1000

120010-210-1

10 10

2V DS (V)

C (pF)

Ciss

Coss Crss

V DS =25V T j =25°C; I D =10A

Fig 13.Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 14.Gate-source voltage as a function of turn-on

gate charge; typical values.

V GS =0V

Fig 15.Reverse diode current as a function of reverse diode voltage; typical values.

03nc49

150

V GS (V)

I D (A)

T j = 150 o C

T j = 25 o C

03nc47

Q G (nC)

V GS (V)V DD = 44 V

V DD = 14 V

03nc46

020

600.0

0.5

1.0

1.5

2.0

V SD (V)

I S (A)

T j = 150 o C

T j = 25 o C

9.Package outline

Fig 16.SOT223 (SC-73).

UNIT A 1b p c D E e 1H E L p Q y w v REFERENCES

OUTLINE VERSION EUROPEAN PROJECTION

ISSUE DATE IEC

JEDEC

EIAJ mm

0.100.01

1.81.5

0.800.60

b 13.12.9

0.320.22

6.76.3

3.73.3

2.3

e 4.6

7.36.7

1.10.7

0.950.85

0.1

0.2

DIMENSIONS (mm are the original dimensions) SOT223

SC-73

97-02-2899-09-13

w M b p

D b 1

e 1

A 1

L p

detail X

H E

E v M A

A B B

02 4 mm

scale

A X

Plastic surface mounted package; collector pad for good heat transfer; 4 leads

SOT223

10.Soldering

11.Revision history

Dimensions in mm.

Fig 17.Re?ow soldering footprint for SOT223 (SC-73).

MSA443

1.20(4x)

3.905.90

4.807.40

1 3.851.20 (3x)1.30 (3x)0.30

3.603.50

7.006.15

7.65

solder lands

solder resist occupied area solder paste

Table 6:Revision history

Rev Date

CPCN Description

20010207

-Product speci?cation; initial version.

12.Data sheet status

[1]Please consult the most recently issued data sheet before initiating or completing a design.

13.De?nitions

Short-form speci?cation —The data in a short-form speci?cation is extracted from a full data sheet with the same type number and title.For detailed information see the relevant data sheet or data handbook.

Limiting values de?nition —Limiting values given are in accordance with the Absolute Maximum Rating System(IEC60134).Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speci?cation is not implied.Exposure to limiting values for extended periods may affect device reliability.

Application information —Applications that are described herein for any of these products are for illustrative purposes only.Philips Semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation.14.Disclaimers

Life support —These products are not designed for use in life support appliances,devices,or systems where malfunction of these products can reasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes —Philips Semiconductors reserves the right to make changes,without notice,in the products,including circuits,standard cells,and/or software,described or contained herein in order to improve design and/or performance.Philips Semiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent,copyright,or mask work right to these products,and makes no representations or warranties that these products are free from patent,copyright,or mask work right infringement,unless otherwise speci?ed.

Datasheet status Product status De?nition[1]

Objective speci?cation Development This data sheet contains the design target or goal speci?cations for product development. Speci?cation may

change in any manner without notice.

Preliminary speci?cation Quali?cation This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips

Semiconductors reserves the right to make changes at any time without notice in order to improve design and

supply the best possible product.

Product speci?cation Production This data sheet contains ?nal speci?cations. Philips Semiconductors reserves the right to make changes at any

time without notice in order to improve design and supply the best possible product.

Philips Semiconductors - a worldwide company

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Australia: Tel.+61297048141,Fax.+61297048139 Austria: Tel. +43160101, Fax.+431601011210

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Canada: Tel. +18002347381

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Romania: see Italy

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Slovakia: see Austria

Slovenia: see Italy

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Sweden: Tel. +4686322000, Fax.+4686322745 Switzerland: Tel. +4114882686, Fax.+4114817730 Taiwan: Tel. +886221342451, Fax.+886221342874 Thailand: Tel. +6623617910, Fax.+6623983447

Turkey: Tel. +902165221500, Fax.+902165221813 Ukraine: Tel. +380442642776, Fax.+380442680461

United Kingdom: Tel. +442087305000, Fax.+442087548421 United States: Tel. +18002347381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: Tel. +381113341299, Fax.+381113342553

For all other countries apply to: Philips Semiconductors, Marketing Communications,

Building BE, P.O.Box218, 5600MD EINDHOVEN,

The Netherlands,Fax.+31402724825Internet:https://www.wendangku.net/doc/7f242369.html, (SCA71)

? Philips Electronics N.V. 2001.Printed in The Netherlands

All rights are reserved.Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice.No liability will be accepted by the publisher for any consequence of its use.Publication Contents

1Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Pinning information . . . . . . . . . . . . . . . . . . . . . . 15Quick reference data . . . . . . . . . . . . . . . . . . . . . 26Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 27Thermal characteristics . . . . . . . . . . . . . . . . . . . 47.1Transient thermal impedance. . . . . . . . . . . . . . 48Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 59Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 910Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1011Revision history . . . . . . . . . . . . . . . . . . . . . . . . 1012Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 1113Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1114

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11