BCR139FE6327中文资料
NPN Silicon Digital Transistor
? Switching circuit, inverter, interface circuit, driver circuit
? Built in bias resistor (R 1=22 k ?)
BCR139F/L3BCR139T
EHA07264
Type Marking Pin Configuration Package
BCR139F BCR139L3 BCR139T
WYs WY WY
1=B 1=B 1=B
2=E 2=E 2=E
3=C 3=C 3=C
- - -
- - -
- - -
TSFP-3 TSLP-3-4 SC75
Maximum Ratings Parameter
Symbol Value Unit Collector-emitter voltage V CEO 50V
Collector-base voltage V CBO 50Input forward voltage V i(fwd)60Input reverse voltage V i(rev)5Collector current I C 100mA Total power dissipation- BCR139F, T S ≤ 128°C BCR139L3, T S ≤ 135°C BCR139T, T S ≤ 109°C P tot
250250250
mW
Junction temperature T j 150°C
Storage temperature
T stg
-65 (150)
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) BCR139F
BCR139L3
BCR139T R thJS
≤ 90
≤ 60
≤ 165
K/W
Electrical Characteristics at T A = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min.typ.max.
DC Characteristics
Collector-emitter breakdown voltage
I C = 100 μA, I B = 0
V(BR)CEO50--V
Collector-base breakdown voltage
I C = 10 μA, I E = 0
V(BR)CBO50--
Collector-base cutoff current
V CB = 40 V, I E = 0
I CBO--100nA
Emitter-base cutoff current
V EB = 5 V, I C = 0
I EBO--100nA
DC current gain2)
I C = 5 mA, V CE = 5 V
h FE120-630-
Collector-emitter saturation voltage2)
I C = 10 mA, I B = 0.5 mA
V CEsat--0.3V
Input off voltage
I C = 100 μA, V CE = 5 V
V i(off)0.4-0.8
Input on voltage
I C = 2 mA, V CE = 0.3 V
V i(on)0.5- 1.1
Input resistor R1152229k?AC Characteristics
Transition frequency
I C = 10 mA, V CE = 5 V, f = 100 MHz
f T-150-MHz
Collector-base capacitance
V CB = 10 V, f = 1 MHz
C cb-3-pF
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2Pulse test: t < 300μs; D < 2%
DC current gain h FE = ?(I C )
V CE = 5V (common emitter configuration)
-1
10 10 10 h F E
Collector-emitter saturation voltage V CEsat = ?(I C ), h FE = 20
I C
Input on Voltage V i
(on) = ?
(I C )
V CE = 0.3V (common emitter configuration)
2
I C
Input off voltage V i(off) =
?(I C
)
V CE = 5V (common emitter configuration)
I C
Total power dissipation P tot = ?(T S) BCR139F
Total power dissipation P tot = ?(T S) BCR139L3
Total power dissipation P tot = ?(T S) BCR139T
Permissible Pulse Load P totmax /P totDC = ?(t p )BCR139F
10 10 10 10 P t o t m a x /P t o t
D C
Permissible Puls Load R thJS
= ? (t p )BCR139F
10 10 10 10 K/W
R t h
J S
Permissible Puls Load R thJS =
? (t p )BCR139L3
10 10 10 10 R t h J
S
Permissible Pulse Load P totmax /P totDC = ?(t p )BCR139L3
10 10 10 10 P t o t m a x / P t o t D C
Permissible Puls Load R thJS = ? (t p )BCR139T
10 10 10 10 10 K/W
R t h J
S
Permissible Pulse Load P totmax /P totDC = ?(t p )BCR139T
10 10 10 10 P t o t m a x / P t o t D C
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC751)) CES-Code
Month200320042005200620072008200920102011201220132014 01a p A P a p A P a p A P 02b q B Q b q B Q b q B Q 03c r C R c r C R c r C R 04d s D S d s D S d s D S 05e t E T e t E T e t E T 06f u F U f u F U f u F U 07g v G V g v G V g v G V 08h x H X h x H X h x H X 09j y J Y j y J Y j y J Y 10k z K Z k z K Z k z K Z 11l2L4l2L4l2L4 12n3N5n3N5n3N5
1) New Marking Layout for SC75, implemented at October 2005.
.
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
? Infineon Technologies AG 2006.
All Rights Reserved.
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