HAT2038R-EL-E中文资料
HAT2038R, HAT2038RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1167-0500
(Previous: ADE-208-666C)
Rev.5.00
Sep 07, 2005 Features
? For Automotive Application (at Type Code “J”)
? Low on-resistance
? Capable of 4 V gate drive
? High density mounting
Outline
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage V DSS 60 V Gate to source voltage V GSS ±20 V Drain current
I D 5 A Drain peak current
I D (pulse) Note 1
40 A
Body-drain diode reverse drain current I DR 5 A
HAT2038R — — Avalanche current HAT2038RJ I AP Note 4 5 A
HAT2038R — — Avalanche energy HAT2038RJ E AR Note 4
2.14 mJ
Channel dissipation Pch Note 2
2
W Channel dissipation Pch Note 3
3 W Channel temperature Tch 150 °C Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 4. Value at Tch = 25°C, Rg ≥ 50 ?
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS 60 — — V I D = 10 mA, V GS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V I G = ±100 μA, V DS = 0 Gate to source leak current I GSS — — ±10 μA V GS = ±16 V, V DS = 0
HAT2038R I DSS — — 1 μA Zero gate voltage drain current
HAT2038RJ I DSS — — 0.1 μA V DS = 60 V, V GS = 0 HAT2038R I DSS — — — μA Zero gate voltage drain current
HAT2038RJ I DSS — — 10 μA
V DS = 48 V, V GS = 0
Ta = 125°C
Gate to source cutoff voltage
V GS (off) 1.2 — 2.2 V V DS = 10 V, I D = 1 mA
R DS (on) — 0.043 0.058 ? I D = 3 A, V GS = 10 V Note 5
Static drain to source on state resistance R DS (on) —
0.056 0.084 ? I D = 3 A, V GS = 4 V Note 5
Forward transfer admittance |y fs | 6 9 — S I D = 3 A, V DS = 10 V Note 5
Input capacitance Ciss — 520 — pF Output capacitance
Coss
—
270
—
pF
Reverse transfer capacitance Crss — 100 — pF
V DS = 10 V V GS = 0 f = 1 MHz
Turn-on delay time t d (on) — 11 — ns
Rise time
t r — 40 — ns Turn-off delay time
t d (off) — 110 — ns
Fall time
t f — 80 — ns
V GS = 10 V, I D = 3 A, V DD ? 30 V Body-drain diode forward voltage V DF — 0.84 1.1 V I F = 5 A, V GS = 0 Note 5
Body-drain diode reverse recovery time t rr
— 40 — ns I F = 5 A, V GS = 0
di F /dt = 50 A/μs
Note: 5. Pulse test
Main Characteristics
Package Dimensions
Ordering Information
Part Name Quantity Shipping Container
pcs Taping
HAT2038R-EL-E 2500
HAT2038RJ-EL-E 2500
pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
https://www.wendangku.net/doc/7e1630840.html, RENESAS SALES OFFICES
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